Abstract: Semiconductor wafers are polished simultaneously on both the front and the rear sides between an upper polishing plate and a lower polishing plate, each covered with a polishing pad, wherein a polishing gap (x1+x2) corresponding to a difference in the respective distances between facing surfaces of upper polishing pad and lower polishing pad which come into contact with the semiconductor wafer at the inner edge and at the outer edge of the polishing pads is changed incrementally or continuously during the polishing process.

Abstract: A method dresses one polishing cloth or two polishing pads simultaneously, in which a polishing cloth has been applied to a polishing plate, with at least one dresser (4), which is equipped with at least one dressing element (8), this at least one dressing element (8) being in contact with the at least one polishing cloth (11, 12) to be dressed, wherein the at least one polishing plate (21, 22) is rotated with a relative rotational speed and the at least one dresser (4) is rotated with a relative rotational speed and at least two different combinations of directions of rotation of the two pairs of polishing plates (21, 22) and pin wheels (31, 32) are executed during the simultaneous dressing of two polishing pads (11, 12) or during the dressing of one polishing cloth (11) of the polishing plate (21) and of the at least one dresser (4).

Abstract: A method for polishing at least one wafer composed of semiconductor material that has a front side and the rear side includes performing at least one first polishing step including simultaneously polishing both front and rear sides of the at least one wafer at a process temperature between an upper polishing plate and a lower polishing plate. Each of the upper polishing and lower polishing plates is covered with a polishing pad having an inner edge and an outer edge, a hardness of at least 80° Shore A, a compressibility of less than 2.5%, and respective upper and lower surfaces that come into contact with the wafer being polished. The upper and lower surfaces form a polishing gap extending from the inner edge to the outer edge. A height of the polishing gap at the inner edge differs linearly from the height of the polishing gap at the outer edge.

Abstract: A method dresses one polishing cloth or two polishing pads simultaneously, in which a polishing cloth has been applied to a polishing plate, with at least one dresser (4), which is equipped with at least one dressing element (8), this at least one dressing element (8) being in contact with the at least one polishing cloth (11, 12) to be dressed, wherein the at least one polishing plate (21, 22) is rotated with a relative rotational speed and the at least one dresser (4) is rotated with a relative rotational speed and at least two different combinations of directions of rotation of the two pairs of polishing plates (21, 22) and pin wheels (31, 32) are executed during the simultaneous dressing of two polishing pads (11, 12) or during the dressing of one polishing cloth (11) of the polishing plate (21) and of the at least one dresser (4).

Abstract: A method for polishing at least one wafer composed of semiconductor material that has a front side and the rear side includes performing at least one first polishing step including simultaneously polishing both front and rear sides of the at least one wafer at a process temperature between an upper polishing plate and a lower polishing plate. Each of the upper polishing and lower polishing plates is covered with a polishing pad having an inner edge and an outer edge, a hardness of at least 80° Shore A, a compressibility of less than 2.5%, and respective upper and lower surfaces that come into contact with the wafer being polished. The upper and lower surfaces form a polishing gap extending from the inner edge to the outer edge. A height of the polishing gap at the inner edge differs linearly from the height of the polishing gap at the outer edge.