Abstract: A pixel structure for an electronic display, the pixel structure comprising a substrate, at least one LED emitter arranged on the substrate, and at least one wavelength conversion unit arranged on the substrate adjacent to the LED emitter. The LED emitter is configured to emit emission radiation, the emission radiation being within an emission wavelength range and emitted in one or multiple emission directions within a main emission plane. The wavelength conversion unit is configured to convert the emission radiation to converted radiation within a converted wavelength range, the converted wavelength range being different from the emission wavelength range. The converted radiation propagates from the wavelength conversion unit in a main conversion direction perpendicular to the main emission plane, the main conversion direction being, for example, a direction towards a user of an electronic device having an electronic display comprising at least one such pixel structure.

Abstract: A thermal radiation detection device (1), said device comprising a sensor array (2) comprising a plurality of sensor elements (3) and an optical waveguide (4) having a radiation input end (5) and a radiation output end (6). The radiation input end (5) is configured to receive thermal5 radiation, and the radiation output end (6) is operatively connected to the sensor array (2). The optical waveguide (4) is configured to transmit the received thermal radiation as a plurality of simultaneous thermal radiation signals. By decoupling the sensor array from the radiation input end, the relatively large sensor array can be placed in a position optimal for electronic functionality and optimal in view of mechanical constraints, independent of the radiation input position.

Abstract: A modulation driver for delivering an output modulation current for driving an optical source of an optical transmitter, the output modulation current comprises a first modulation current region characterised with a first temperature gradient and a second modulation current region characterised with a second temperature gradient, said first modulation current region and said second modulation region being for delivering modulation current at a first temperature range and a second temperature range, temperatures of said second temperature being higher than temperatures of said first temperature range, said second temperature gradient being larger than said first temperature gradient.

Abstract: A distance measuring apparatus includes an optical transmitter having an optical source for transmitting modulated optical signals towards a remote object, and an optical receiver for detecting the modulated optical signals upon reflection from the remote object. The optical receiver includes a photo-detector which is configured for gated detection of optical signals by gating signals applied thereto. The gating signals are arranged to be in a constant time or phase relationship with the modulated optical signals. The optical receiver calculates the distance of the remote object with reference to delay information between transmitted and detected optical signals, with the delay information being determined by gated detection of optical signals at the photo-detector.

Abstract: One embodiment of the invention uses an MSM photodetector that is coupled to a relatively large core optical waveguide, e.g. an HCS fiber or a plastic optical fiber (POF). The MSM photodetector with its low capacitance enables high speed data transmission using large core optical waveguides.

Abstract: A security surveillance device that includes an electromagnetic wave sensor for sensing an electromagnetic wave of an external electromagnetic wave source and an anti-tampering arrangement. The anti-tampering arrangement includes a detection window forming a partition between the external electromagnetic wave source and the electromagnetic wave sensor, the detection window includes an outer corrugated surface facing the electromagnetic wave source; an optical arrangement for deploying an optical surveillance beam which is arranged to undergo multiple reflections at the outer corrugated surface of the detection window is provided and the surveillance beam loop is monitored by a control circuitry to monitor tampering.

Abstract: An opto-electronic device comprising opto-electronic circuitry on a lead-frame and an optical guide receptacle for receiving an optical guide coupler, the opto-electronic circuitry comprises signal conversion means whereby an optical signal can be converted into an electrical signal or vice versa, the optical guide receptacle comprises means for guiding reception of an optical guide coupler whereby an optical guide coupler is optically aligned with the signal conversion means when received by said optical guide receptacle.

Abstract: A monitoring device for security surveillance application, the device comprising: an electromagnetic wave sensor for sensing electromagnetic wave from an external electromagnetic wave source; a detection window for forming a partition between the external electromagnetic wave source and the electromagnetic wave sensor; and an anti-tampering arrangement comprising an optical arrangement for deploying an optical surveillance beam and control circuitry, wherein i. the optical surveillance beam comprising a first beam portion and a second beam portion, the first beam portion being a beam emitted by the optical arrangement towards the detection window and the second beam portion being due to total internal reflection of the first beam portion by the detection window, and ii. the control circuitry being for detection of a variation of the second beam portion, wherein the variation is indicative of tampering of the detection window.

Abstract: A monitoring device for security surveillance application, the device comprising: an electromagnetic wave sensor for sensing an electromagnetic wave of an external electromagnetic wave source; a detection window for forming a partition between the external electromagnetic wave source and the electromagnetic wave sensor; and an anti-tampering arrangement comprising an optical arrangement for deploying an optical surveillance beam and control circuitry, wherein i. the optical surveillance beam comprises a first beam portion and a second beam portion, the first beam portion being a beam emitted by the optical arrangement towards the detection window, and the second beam portion being due to reflection of the first beam portion by said detection window; and ii. the control circuitry is for detection of a variation of the second beam portion, wherein the variation is indicative of tampering of the detection window.

Abstract: An opto-electronic device comprising a plurality of photo-detectors, each said photo-detector comprises a plurality of optical detection segments which are connected in parallel, the optical detection segments of said plurality of optical-detectors are interposed so that an optical detection segment of a photo-detector is intermediate optical detection segments of another photo-detector and an optical detection segment of that another photo-detector is intermediate optical detection segments of said photo-detector.

Abstract: An apparatus comprising an optical cavity for measuring an applied force or pressure, wherein an applied force or pressure is measured or monitored by measuring deformation of said optical cavity when subject to said applied force or pressure.

Abstract: A detector for detecting the presence of an object at a prescribed location, the detector comprising:— an optical source arranged for emitting a collimated optical beam towards the prescribed location, an optical detector for detecting optical signals emitted by said optical source, an optical collector arranged for collecting optical beams scattered by an object located at the prescribed location and for forwarding said optical beams to said optical detector for optical detection; and control circuitry for monitoring output of said optical detector and for determining the presence or absence of an object at said prescribed location by monitoring said output.

Abstract: An optoelectronic device comprising an optical source and an optical detector, the optical source being adapted for emitting an optical beam for subsequent reflection towards the optical detector, the optical detector being adapted for receiving the optical beam and comprises a plurality of discrete optical detection regions for converting an optical beam into electrical energy and the optical detection regions are arranged so that an electrical characteristic of the optical detector is dependent on the relative distribution of an incident optical beam on the plurality of optical detection regions.

Abstract: An opto-electronic device comprising opto-electronic circuitry on a lead-frame and an optical guide receptacle for receiving an optical guide coupler, the opto-electronic circuitry comprises signal conversion means whereby an optical signal can be converted into an electrical signal or vice versa, the optical guide receptacle comprises means for guiding reception of an optical guide coupler whereby an optical guide coupler is optically aligned with the signal conversion means when received by said optical guide receptacle.

Abstract: A modulation driver for delivering an output modulation current for driving an optical source of an optical transmitter, the output modulation current comprises a first modulation current region characterised with a first temperature gradient and a second modulation current region characterised with a second temperature gradient, said first modulation current region and said second modulation region being for delivering modulation current at a first temperature range and a second temperature range, temperatures of said second temperature being higher than temperatures of said first temperature range, said second temperature gradient being larger than said first temperature gradient.

Abstract: An optical receiver comprising a photo-detector, wherein said photo-detector is modulated whereby it has a time-variant photo-responsivity following the modulation on the photo-detector.

Abstract: An opto-electronic device comprising a plurality of photo-detectors, each said photo-detector comprises a plurality of optical detection segments which are connected in parallel, the optical detection segments of said plurality of optical-detectors are interposed so that an optical detection segment of a photo-detector is intermediate optical detection segments of another photo-detector and an optical detection segment of that another photo-detector is intermediate optical detection segments of said photo-detector.

Abstract: Described herein is an MSM photodetector device wherein a dielectric layer is positioned between the absorbing layer and the substrate layer in order to decrease the device capacitance and thereby increasing the photodetector bandwidth. The dielectric layer increases the photodetector efficiency and blocks slow moving carriers from the high field drift region. The dielectric layer may be an oxide layer formed by one of wet thermal oxidation of AlGaAs, ion implantation, or wafer bonding with subsequent substrate removal.

Abstract: A photonic device designed with an intermittent absorption profile along a waveguide. The absorption profile is divided into low-absorption and high-absorption segments that are distributed axially in order to decrease the maximum local temperature in the device. The distribution of low-absorption segments can be controlled through techniques such as proton implantation or selective-area quantum well intermixing. The lengths of low-absorption and high-absorption segments can be adjusted to optimize heat dissipation along the device length.

Abstract: Described herein is an MSM photodetector device wherein a dielectric layer is positioned between the absorbing layer and the substrate layer in order to decrease the device capacitance and thereby increasing the photodetector bandwidth. The dielectric layer increases the photodetector efficiency and blocks slow moving carriers from the high field drift region. The dielectric layer may be an oxide layer formed by one of wet thermal oxidation of AlGaAs, ion implantation, or wafer bonding with subsequent substrate removal.