Abstract: The present disclosure provides an input device that puts signals into equipment in response to turning action and that can come down in thickness along an axis of a rotary shaft. The input device includes a knob configured to be turned, a rotary shaft configured to turn together with the knob, and a flange disposed around an outer peripheral surface of the rotary shaft. The flange is designed to regulate turning of the rotary shaft. The input device further includes an elastic component that is disposed around the outer peripheral surface of the rotary shaft and is fastened to the flange, a rotation controller that permits or inhibits turning of the elastic component, and a detector that detects a rotational state of the rotary shaft.

Abstract: The present disclosure provides an input device that puts signals into equipment in response to turning action and that can come down in thickness along an axis of a rotary shaft. The input device includes a knob configured to be turned, a rotary shaft configured to turn together with the knob, and a flange disposed around an outer peripheral surface of the rotary shaft. The flange is designed to regulate turning of the rotary shaft. The input device further includes an elastic component that is disposed around the outer peripheral surface of the rotary shaft and is fastened to the flange, a rotation controller that permits or inhibits turning of the elastic component, and a detector that detects a rotational state of the rotary shaft.

Abstract: The rotating operation input device has the structure in which the click section applies a clicking force to the shaft at a predetermined rotation angle, and the first controller controls the actuator, based on the control signal received from the second controller, so as to apply a desired external force to the shaft. A shifting operation device is structured by connecting the rotating operation input device to the second controller for controlling the shifting device.

Abstract: A method for cleaning a storage tank to which sodium metal is adherent, the method containing: filling, with an inert oil, the storage tank to which sodium metal is adherent; subsequently adding water, water vapor, or a humidified inert gas to the inert oil; providing a gas discharge line to the storage tank and measuring the hydrogen gas concentration in the gas discharge line; regulating the amount of the water, water vapor, or humidified inert gas to be added per hour in accordance with the level of the hydrogen gas concentration; regulating the temperature of the inert oil to 0-98° C.; and converting the sodium metal into caustic soda while changing the liquid surface level of the inert oil in parallel with addition of the water, water vapor, or humidified inert gas to the inert oil.

Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.

Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

Abstract: An in-ceiling embedded type air conditioner including an indoor unit having an air blower and an indoor heat exchanger accommodated in a housing a substantially box-shape, and a filtering unit including a gas-liquid contact member that is disposed at the downstream side of the indoor heat exchanger on an air blowing passage through which air sucked by the air blower flows in the indoor unit and infiltrated with electrolytic water generated by electrolyzing water, the air and the electrolytic water being brought into contact with each other in the gas-liquid contact member, whereby the air cooled or heated in the indoor heat exchanger is filtered, that is, virus, etc. contained in the air is inactivated, sterilized or the like and then blown out to a room to be air-conditioned.

Abstract: An in-ceiling embedded type air conditioner including an indoor unit having an air blower and an indoor heat exchanger accommodated in a housing a substantially box-shape, and a filtering unit including a gas-liquid contact member that is disposed at the downstream side of the indoor heat exchanger on an air blowing passage through which air sucked by the air blower flows in the indoor unit and infiltrated with electrolytic water generated by electrolyzing water, the air and the electrolytic water being brought into contact with each other in the gas-liquid contact member, whereby the air cooled or heated in the indoor heat exchanger is filtered, that is, virus, etc. contained in the air is inactivated, sterilized or the like and then blown out to a room to be air-conditioned.

Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.

Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.

Abstract: An air filtering apparatus for filtering air includes a chamber having an air flow passage through which air flows, the chamber being connected through an air supply duct to a plurality of air blow-out ports opened to a large space, an air filtering portion that is disposed in the chamber and has a plurality of gas-liquid contact members for bringing air into contact with electrolytic water to filter the air, a water tank that is connected through a water feeding pump to a supply pipe for supplying the electrolytic water to each of the gas-liquid contact members of the air filtering portion, an electrolytic unit for generating the electrolytic water, and a mechanism for leading to the electrolytic unit a part of electrolytic water in the water tank which is sucked by the water feeding pump and supplied to the plurality of gas-liquid contact members through the supply pipe, electrolyzing the part of the electrolytic water in the electrolytic unit to further generate electrolytic water and returning the generat

Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.

Abstract: An antenna device includes an antenna, a case accommodating the antenna therein, a sealing cap partially inserted into the case, and a connection terminal extending from the antenna in a predetermined direction. The sealing cap includes an insert portion inserted into the case, and a connector portion exposed from the case. The minimum width of the case in a direction perpendicular to the predetermined direction is smaller than the minimum width of the connector portion in a direction perpendicular to the predetermined direction. This antenna device is flexibly adaptable to a change of a vehicle connector which is inserted into the device, while maintaining a compact size.

Abstract: In an air filtering apparatus for generating electrolytic water, infiltrating the electrolytic water into a gas-liquid contact member, and blowing air to the gas-liquid contact member by an air blowing fan, thereby filtering air, including a drain pipe for discharging the electrolytic water and a drain tank for receiving and stocking the electrolytic water discharged from the drain pipe which are mounted in a housing, the drain tank has a vertical tank body and disposed so as to be taken in and out through the front surface of the housing.

Abstract: An air filtering apparatus including an electrolytic bath for electrolyzing water to generate electrolytic water, a gas-liquid contact member in which the electrolytic water generated in the electrolytic bath infiltrates and an air blowing fan for blowing air to the gas-liquid contact member is equipped with a water circulation passage through which the electrolytic water is supplied/circulated to the gas-liquid contact member, the electrolytic water passing through the gas-liquid contact member is received and stocked by a water receiving tray and the stocked electrolytic water is pumped up and supplied to the gas-liquid contact member, a drain pipe branched from the water circulation passage, a water stop valve for opening/closing the drain pipe, and a drain receiver for receiving and stocking the electrolytic water discharged from the drain pipe when the water stop valve is opened.