Patents by Inventor Toru Gotoda
Toru Gotoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20130153922Abstract: A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate and a light extraction surface. The first electrode layer is provided on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, first conductive type semiconductor layer, and second conductive type semiconductor layer, and has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.Type: ApplicationFiled: November 30, 2012Publication date: June 20, 2013Inventors: Toru Gotoda, Toshiyuki Oka, Shinya Nunoue, Kotaro Zaima
-
Publication number: 20130065340Abstract: A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8?x?1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.Type: ApplicationFiled: November 8, 2012Publication date: March 14, 2013Applicant: Kabushiki Kaisha ToshibaInventors: Yasuo Ohba, Kei Kaneko, Toru Gotoda, Hiroshi Katsuno, Mitsuhiro Kushibe
-
Publication number: 20130059408Abstract: Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.Type: ApplicationFiled: October 31, 2012Publication date: March 7, 2013Inventors: Kotaro Zaima, Toru Gotoda, Toshiyuki Oka, Shinya Nunoue
-
Patent number: 8390012Abstract: A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.Type: GrantFiled: September 2, 2010Date of Patent: March 5, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Toru Gotoda, Hajime Nago, Toshiyuki Oka, Kotaro Zaima, Shinya Nunoue
-
Patent number: 8390007Abstract: A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.Type: GrantFiled: September 2, 2010Date of Patent: March 5, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Toru Gotoda, Takahiro Sato, Toshiyuki Oka, Shinya Nunoue, Kotaro Zaima
-
Publication number: 20120319161Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.Type: ApplicationFiled: February 27, 2012Publication date: December 20, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Toru GOTODA, Toshiyuki Oka, Shinya Nunoue, Kotaro Zaima, Hiroshi Ono, Hajime Nago
-
Patent number: 8334153Abstract: A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The light emitting element having a light extraction surface. The first electrode layer on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface of the light emitting element. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer.Type: GrantFiled: September 2, 2010Date of Patent: December 18, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Toru Gotoda, Toshiyuki Oka, Shinya Nunoue, Kotaro Zaima
-
Patent number: 8329489Abstract: A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8?x?1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.Type: GrantFiled: July 22, 2009Date of Patent: December 11, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Yasuo Ohba, Kei Kaneko, Toru Gotoda, Hiroshi Katsuno, Mitsuhiro Kushibe
-
Patent number: 8314437Abstract: Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.Type: GrantFiled: September 2, 2010Date of Patent: November 20, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Kotaro Zaima, Toru Gotoda, Toshiyuki Oka, Shinya Nunoue
-
Publication number: 20120199811Abstract: Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.Type: ApplicationFiled: April 18, 2012Publication date: August 9, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Kotaro Zaima, Toru Gotoda, Toshiyuki Oka, Shinya Nunoue
-
Patent number: 8178891Abstract: Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.Type: GrantFiled: September 2, 2010Date of Patent: May 15, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Kotaro Zaima, Toru Gotoda, Toshiyuki Oka, Shinya Nunoue
-
Publication number: 20120095584Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.Type: ApplicationFiled: December 20, 2011Publication date: April 19, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masanobu Ando, Toru Gotoda, Toru Kita
-
Publication number: 20120056154Abstract: A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.Type: ApplicationFiled: March 1, 2011Publication date: March 8, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Kotaro ZAIMA, Toru Gotoda, Toshiyuki Oka, Shinya Nunoue
-
Patent number: 8101490Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.Type: GrantFiled: March 22, 2010Date of Patent: January 24, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Masanobu Ando, Toru Gotoda, Toru Kita
-
Publication number: 20110220933Abstract: A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.Type: ApplicationFiled: September 2, 2010Publication date: September 15, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Toru GOTODA, Takahiro Sato, Toshiyuki Oka, Shinya Nunoue, Kotaro Zaima
-
Publication number: 20110220935Abstract: A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The light emitting element having a light extraction surface. The first electrode layer on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface of the light emitting element. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer.Type: ApplicationFiled: September 2, 2010Publication date: September 15, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Toru GOTODA, Toshiyuki Oka, Shinya Nunoue, Kotaro Zaima
-
Publication number: 20110220934Abstract: A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.Type: ApplicationFiled: September 2, 2010Publication date: September 15, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Toru Gotoda, Hajime Nago, Toshiyuki Oka, Kotaro Zaima, Shinya Nunoue
-
Publication number: 20110215293Abstract: Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.Type: ApplicationFiled: September 2, 2010Publication date: September 8, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Kotaro Zaima, Toru Gotoda, Toshiyuki Oka, Shinya Nunoue
-
Publication number: 20110215292Abstract: Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.Type: ApplicationFiled: September 2, 2010Publication date: September 8, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Kotaro Zaima, Toru Gotoda, Toshiyuki Oka, Shinya Nunoue
-
Publication number: 20110039356Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.Type: ApplicationFiled: March 22, 2010Publication date: February 17, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masanobu Ando, Toru Gotoda, Toru Kita