Abstract: Provided is a light-emitting device including an organic light-emitting element and a control unit that controls the organic light-emitting element. The organic light-emitting element includes a first electrode, a second electrode, and an organic light-emitting layer which is disposed between the first electrode and the second electrode and in which separation of charges occurs due to incidence of excited light. The control unit changes a potential difference between the first electrode and the second electrode so that recoupling of the charges occurs, in a second period after passage of a delay period from a first period in which the excited light is incident to the organic light-emitting layer.

Abstract: An organic electro-luminescent element having a luminescence peak in a near-infrared range, comprising a positive electrode, a negative electrode, and at least one organic layer including a luminescent layer located between the positive electrode and the negative electrode, wherein the luminescent layer comprises a host material, a delayed fluorescent material and a luminescent material, wherein each of the delayed fluorescent material and the luminescent material have a structure with two or three benzene rings bonded to an N atom.

Abstract: Provided is a light-emitting device including an organic light-emitting element and a control unit that controls the organic light-emitting element. The organic light-emitting element includes a first electrode, a second electrode, and an organic light-emitting layer which is disposed between the first electrode and the second electrode and in which separation of charges occurs due to incidence of excited light. The control unit changes a potential difference between the first electrode and the second electrode so that recoupling of the charges occurs, in a second period after passage of a delay period from a first period in which the excited light is incident to the organic light-emitting layer.

Abstract: Provided is a superluminescent diode including an optical waveguide body configured as a double heterostructure including an active layer and a first clad layer and a second clad layer interposing the active layer. When a direction perpendicular to both an optical waveguide direction of the optical waveguide body and a facing direction of the first clad layer and the second clad layer is set as a width direction, the active layer is provided with a limitation region extending along the optical waveguide direction and partitioning the active layer in the width direction. Carriers are less likely to be generated in the limitation region than in a region other than the limitation region in the active layer.

Abstract: An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on the second clad layer; a second electrode that is disposed on a second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body; a third electrode that is disposed on the second clad layer on the other side of the first electrode in the light guiding direction; and at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween. The optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode.

Abstract: With a probe 2 in which an end of the organic photoelectric-conversion layer 23 on a projection optical path 10 side is covered by an upper electrode 24 having a light-blocking effect, light passing through the projection optical path 10 from a light source can be prevented from directly entering the organic photoelectric-conversion layer 23.

Abstract: An organic EL element having a luminescence peak in a near-infrared range comprises a positive electrode, a negative electrode, and at least one organic layer including a luminescent layer located between the positive electrode and the negative electrode. The luminescent layer comprises a host material, a delayed fluorescent material and a luminescent material. The LUMO and HOMO energy levels of the delayed fluorescent material and the luminescent material, the absorption spectrum of the luminescent material, and the emission spectrum of the delayed fluorescent material satisfy predetermined relationships.

Abstract: A SERS element 2 comprises a substrate 21 having a front face 21a; a fine structure part 24, formed on the front face 21a, having a plurality of pillars 27; a first conductor layer 31 formed on the front face 21a and fine structure part 24 so as to cover the front face 21a and fine structure part 24 continuously; and a second conductor layer 32 formed on the first conductor layer 31 so as to form a plurality of gaps G1, G2 for surface-enhanced Raman scattering; while the first and second conductor layers 31, 32 are constituted by the same material.

Abstract: An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on a second clad layer; a second electrode that is disposed on the second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body; a third electrode that is disposed on the second clad layer on the other side of the first electrode in the light guiding direction; and at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween. The optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode.

Abstract: An organic EL element having a luminescence peak in a near-infrared range comprises a positive electrode, a negative electrode, and at least one organic layer including a luminescent layer located between the positive electrode and the negative electrode. The luminescent layer comprises a host material, a delayed fluorescent material and a luminescent material. The LUMO and HOMO energy levels of the delayed fluorescent material and the luminescent material, the absorption spectrum of the luminescent material, and the emission spectrum of the delayed fluorescent material satisfy predetermined relationships.

Abstract: An organic electro-luminescent element having a luminescence peak in a near-infrared range, comprising a positive electrode, a negative electrode, and at least one organic layer including a luminescent layer located between the positive electrode and the negative electrode, wherein the luminescent layer comprises a host material, a delayed fluorescent material and a luminescent material, wherein each of the delayed fluorescent material and the luminescent material have a structure with two or three benzene rings bonded to an N atom.

Abstract: A SERS element comprises a substrate; a fine structure part formed on a front face of the substrate and having a plurality of pillars; and a conductor layer formed on the fine structure part and constituting an optical function part for generating surface-enhanced Raman scattering. The conductor layer has a base part formed along the front face of the substrate and a plurality of protrusions protruding from the base part at respective positions corresponding to the pillars. The base part and the protrusions form a plurality of gaps in the conductor layer, each of the gaps having an interstice gradually decreasing in the projecting direction of the pillar.

Abstract: A SERS element comprises a substrate; a fine structure part formed on a front face of the substrate and having a plurality of pillars; and a conductor layer formed on the fine structure part and constituting an optical function part for generating surface-enhanced Raman scattering. The conductor layer has a base part formed along the front face of the substrate and a plurality of protrusions protruding from the base part at respective positions corresponding to the pillars. The base part and the protrusions form a plurality of gaps in the conductor layer, each of the gaps having an interstice gradually decreasing in a direction perpendicular to the projecting direction of the pillar.

Abstract: A SERS element comprises a substrate having a front face; a fine structure part formed on the front face and having a plurality of pillars; and a conductor layer formed on the fine structure part and constituting an optical function part for generating surface-enhanced Raman scattering. The conductor layer has a base part formed along the front face and a plurality of protrusions protruding from the base part at respective positions corresponding to the pillars. The base part is formed with a plurality of grooves surrounding the respective pillars when seen in the projecting direction of the pillars, while an end part of the protrusion is located within the groove corresponding thereto.

Abstract: A SERS element comprises a substrate having a front face; a fine structure part formed on the front face and having a plurality of pillars; and a conductor layer formed on the fine structure part and constituting an optical function part for generating surface-enhanced Raman scattering. The conductor layer has a base part formed along the front face and a plurality of protrusions protruding from the base part at respective positions corresponding to the pillars. The base part has a thickness greater than the height of the pillars.

Abstract: A photodetector 1A comprises a multilayer structure 3 having a first layer 4 constituted by first metal or first semiconductor, a semiconductor structure layer 5 mounted on the first layer 4 and adapted to excite an electron by plasmon resonance, and a second layer 6 mounted on the semiconductor structure layer 5 and constituted by second metal or second semiconductor.

Abstract: A quantum cascade detector includes a semiconductor substrate, and an active layer formed by laminating unit laminate structures each having an absorption region with a first barrier layer to a second well layer and a transport region with a third barrier layer to an n-th well layer. A second absorption well layer has a layer thickness ½ or less of that of a first absorption well layer thickest in one period, and a coupling barrier layer has a layer thickness smaller than that of an exit barrier layer thickest in one period. The unit laminate structure has a detection lower level arising from a ground level in the first well layer, a detection upper level generated by coupling an excitation level in the first well layer and a ground level in the second well layer, and a transport level structure for electrons.

Abstract: With a probe 2 in which an end of the organic photoelectric-conversion layer 23 on a projection optical path 10 side is covered by an upper electrode 24 having a light-blocking effect, light passing through the projection optical path 10 from a light source can be prevented from directly entering the organic photoelectric-conversion layer 23.

Abstract: A SERS element 2 comprises a substrate 21 having a front face 21a; a fine structure part 24, formed on the front face 21a, having a plurality of pillars 27; a first conductor layer 31 formed on the front face 21a and fine structure part 24 so as to cover the front face 21a and fine structure part 24 continuously; and a second conductor layer 32 formed on the first conductor layer 31 so as to form a plurality of gaps G1, G2 for surface-enhanced Raman scattering; while the first and second conductor layers 31, 32 are constituted by the same material.

Abstract: A SERS element comprises a substrate having a front face; a fine structure part formed on the front face and having a plurality of pillars; and a conductor layer formed on the fine structure part and constituting an optical function part for generating surface-enhanced Raman scattering. The conductor layer has a base part formed along the front face and a plurality of protrusions protruding from the base part at respective positions corresponding to the pillars. The base part has a thickness greater than the height of the pillars.