Abstract: By disposing various current-sensing layers on a semiconductor element with a current-sensing function, wherein signals corresponding to the sensing currents derived from each current-sensing electrode are inputted independently into said over-current control circuit and short-circuit control circuit in a control circuit for said semiconductor element; or by constructing the current-sensing resistor in said control circuit with various resistors connected in series, wherein a single sensing current flows into this resistor to generate various detection voltages divided by the resistor, while detection voltages with different values are inputted independently into said main current turn-off command circuit and main current control circuit the value I.sub.oc of the over-current detection level for the semiconductor element with a current-sensing function and the value I.sub.sct at the short-circuit current detection level can be set independently of each other. Therefore, while increasing I.sub.oc, setting I.