Abstract: A method of inspecting contact holes or via holes in a semiconductor device. Plural small measurement regions Q are established on the whole sample surface. The measurement regions Q are successively irradiated with an electron beam. At this time, an absorption current flowing across the sample is detected and amplified by a current amplifier. A control unit stores data about the absorption current signal derived from the small regions Q in locations of a memory which are addressed corresponding to the positions of the small regions. The control unit reads data about absorption current intensity values from the memory and classifies the intensity values into four intensity ranges, for example, to which different brightness intensities are assigned.

Abstract: A specimen inspection instrument has a specimen-moving mechanism mounted within a specimen chamber. An electrical current, induced across the specimen by the mechanism, is detected with a detector. The specimen is examined based on the obtained detector output signal. An amplifier for amplifying the detector output signal is placed outside the specimen chamber. A first lead wire passes the detector output signal to the outside amplifier through the wall of the specimen chamber. A second lead wire connects a conductive partition member with a conducting member and with a reference input terminal of the amplifier that determines a reference potential for the output from the amplifier.

Abstract: A specimen inspection instrument has a specimen-moving mechanism mounted within a specimen chamber. An electrical current, induced across the specimen by the mechanism, is detected with a detector. The specimen is examined based on the obtained detector output signal. An amplifier for amplifying the detector output signal is placed outside the specimen chamber. A first lead wire passes the detector output signal to the outside amplifier through the wall of the specimen chamber. A second lead wire connects a conductive partition member with a conducting member and with a reference input terminal of the amplifier that determines a reference potential for the output from the amplifier.

Abstract: A method of inspecting contact holes or via holes in a semiconductor device. Plural small measurement regions Q are established on the whole sample surface. The measurement regions Q are successively irradiated with an electron beam. At this time, an absorption current flowing across the sample is detected and amplified by a current amplifier. A control unit stores data about the absorption current signal derived from the small regions Q in locations of a memory which are addressed corresponding to the positions of the small regions. The control unit reads data about absorption current intensity values from the memory and classifies the intensity values into four intensity ranges, for example, to which different brightness intensities are assigned.