Abstract: The present invention provides a method for manufacturing an SOI wafer including a step of forming an insulator film on an entire surface of a bond wafer before bonding, bringing a bonded wafer before delaminating the bond wafer at an ion implanted layer into contact with a liquid that enables dissolving the insulator film while protecting the insulator film on a back surface on the opposite side of a bonding surface of the bond wafer, or exposing the bonded wafer to a gas that enables dissolving the insulator film, and thus etching the insulator film placed between the bond wafer and a base wafer from an outer peripheral end of the bonded wafer toward a center of the bonded wafer.

Abstract: According to the present invention, there is provided a method for manufacturing an SOI wafer having the step of performing a first sacrificial oxidation treatment on the aforementioned bonded SOI wafer in which the delamination has been performed after a first RTA treatment has been performed thereon and then performing a second sacrificial oxidation treatment thereon after a second RTA treatment has been performed thereon, wherein the first and second RTA treatments are performed under a hydrogen gas containing atmosphere and at a temperature of 1100° C. or more, wherein after a thermal oxide film has been formed on the aforementioned SOI layer front surface by performing only thermal oxidation by a batch type heat treating furnace at a temperature of 900° C. or more and 1000° C. or less in the first and second sacrificial oxidation treatments, a treatment for removing the thermal oxide film is performed.

Abstract: The present invention provides a method for manufacturing an SOI wafer, in which an insulator film is formed at least on all surfaces of a base wafer, and while protecting a first part of the insulator film on a back surface on the opposite side from a bonded surface of the base wafer, a bonded wafer before separating a bond wafer along a layer of the implanted ion is brought into contact with a liquid capable of dissolving the insulator film or exposed to a gas capable of dissolving the insulator film, and a second part of the insulator film interposed between the bond wafer and the base wafer is etched from an outer circumferential edge of the bonded wafer and toward the center of the bonded wafer. The method can control the terrace width and inhibit warping of the SOI wafer in a bonding process with a base wafer.

Abstract: The present invention provides a method for manufacturing an SOI wafer, in which an insulator film is formed at least on all surfaces of a base wafer, and while protecting a first part of the insulator film on a back surface on the opposite side from a bonded surface of the base wafer, a bonded wafer before separating a bond wafer along a layer of the implanted ion is brought into contact with a liquid capable of dissolving the insulator film or exposed to a gas capable of dissolving the insulator film, and a second part of the insulator film interposed between the bond wafer and the base wafer is etched from an outer circumferential edge of the bonded wafer and toward the center of the bonded wafer. The method can control the terrace width and inhibit warping of the SOI wafer in a bonding process with a base wafer.

Abstract: The present invention is directed to a method for manufacturing an SOI wafer in which the bonded SOI wafer after the delamination by the ion implantation delamination method is subjected to a rapid thermal oxidation process such that an oxide film is formed on a surface of the SOI layer, the oxide film is removed, the bonded SOI wafer is then subjected to a flattening heat treatment to flatten the surface of the SOI layer, the flattening heat treatment causing migration of silicon atoms of the surface of the SOI layer, and the bonded SOI wafer is then subjected to a sacrificial oxidation process to adjust a film thickness of the SOI layer. The method enables efficient manufacture of a high quality SOI wafer having an SOI layer with sufficiently reduced surface roughness of the SOI layer surface and fewer deep pits in the SOI layer surface.

Abstract: According to the present invention, there is provided a method for manufacturing an SOI wafer having the step of performing a first sacrificial oxidation treatment on the aforementioned bonded SOI wafer in which the delamination has been performed after a first RTA treatment has been performed thereon and then performing a second sacrificial oxidation treatment thereon after a second RTA treatment has been performed thereon, wherein the first and second RTA treatments are performed under a hydrogen gas containing atmosphere and at a temperature of 1100° C. or more, wherein after a thermal oxide film has been formed on the aforementioned SOI layer front surface by performing only thermal oxidation by a batch type heat treating furnace at a temperature of 900° C. or more and 1000° C. or less in the first and second sacrificial oxidation treatments, a treatment for removing the thermal oxide film is performed.

Abstract: The invention provides a reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-produce at the time of producing a bonded wafer is subjected to reclaiming polishing and is again available as a bond wafer or a base wafer, wherein, in the reclaiming polishing, the delaminate wafer is polished with use of a double-side polisher in a state that oxide film is not formed on a delaminated surface of the delaminated wafer and oxide film is formed on a back side which is the opposite side of the delaminated surface. As a result, the reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-product at the time of manufacturing a bonded wafer based on an ion implantation delamination method is subjected to the reclaiming polishing, which enables sufficiently improving quality.

Abstract: It is intended to provide an occludator whereby joint movements at occlusion being similar to the actual tempromandibular joint movements of an individual patient or ideal movements can be reproduced, and a face bow to be used for the occludator. To achieve this object, an occlusion plane against a standard plane is accurately drawn by using the above face bow F whereby the occlusion plane can be drawn at a high accuracy. A solid model of the tempromandibular joint similar to the tempromandibular joint form of an actual patient is used as the joint unit of the occludator K, while the positional relationship in the body at occlusion is three-dimensionally reproduced in the occludator I with the use of the above-described face bow F.

Abstract: A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.

Abstract: There are provided an image acquisition system capable of storing high-accuracy measurement of changes in the shape of a plant growing process in image information with high accuracy and an analyzing method for analyzing an acquired image to analyze plant growing. There is provided a plant growing analyzing system having operation detection means of a conveying mechanism of a plant in order that an observed plant in an image is photographed at a constantly fixed position or angle; a position detecting mark in the acquired image; a computation part for evaluating detected data to control a conveying amount; and a conveying control part, wherein the growing process of many plants is stored in image information in a long period, and the stored image is used to realize high-accuracy measurement.

Abstract: A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.

Abstract: It is intended to provide an occludator whereby joint movements at occlusion being similar to the actual tempromandibular joint movements of an individual patient or ideal movements can be reproduced, and a face bow to be used for the occludator. To achieve this object, an occlusion plane against a standard plane is accurately drawn by using the above face bow F whereby the occlusion plane can be drawn at a high accuracy. A solid model of the tempromandibular joint similar to the tempromandibular joint form of an actual patient is used as the joint unit of the occludator K, while the positional relationship in the body at occlusion is three-dimensionally reproduced in the occludator I with the use of the above-described face bow F.

Abstract: There are provided an image acquisition system capable of storing high-accuracy measurement of changes in the shape of a plant growing process in image information with high accuracy and an analyzing method for analyzing an acquired image to analyze plant growing. There is provided a plant growing analyzing system having operation detection means of a conveying mechanism of a plant in order that an observed plant in an image is photographed at a constantly fixed position or angle; a position detecting mark in the acquired image; a computation part for evaluating detected data to control a conveying amount; and a conveying control part, wherein the growing process of many plants is stored in image information in a long period, and the stored image is used to realize high-accuracy measurement.