Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A film-forming method that includes providing a substrate to be film-formed in a reaction chamber of an apparatus that includes: the reaction chamber; a first gas supply pipe in fluid communication with the reaction chamber for carrying a first processing gas to the reaction chamber; a second gas supply pipe in fluid communication with the reaction chamber for carrying a second processing gas to the reaction chamber; a gas reservoir in fluid communication with the first gas supply pipe; and a bypass line in fluid communication with the first gas supply pipe, the bypass line bypassing the gas reservoir; and the steps of alternately supplying the first processing gas and the second processing gas into the reaction chamber a plurality of times to form a film on the substrate, and wherein when the first gas is supplied, the gas reservoir or the bypass line is selected to supply the first gas into the reaction chamber through the first gas supply pipe, and when the second gas is supplied the second gas is supplied

Abstract: A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.

Abstract: A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tubeto generate Al2O3 film on the surface of the wafer. The apparatus also includes supply tubes and for flowing the ozone and TMA and a nozzle supplying gas into the reaction tube. The two supply tubes are connected to the nozzle disposed inside the heater in a zone inside the reaction tube where a temperature is lower than a temperature near the wafer, and the ozone and TMA are supplied into the reaction tube through the nozzle.

Abstract: A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.

Abstract: A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7, and a gas reserving part 10 connected to the reaction chamber 6, having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the gas inside the reaction chamber 6 and reserving gas supplied to the reaction chamber 6, and reserving the gas to be supplied to the reaction chamber 6 midway in the gas supply pipe, and a bypass line 11 bypassing the gas reserving part 10, the gas receiving part 10 being arranged parallel with the bypass line, and a control part 60 supplying the treating gas to the reaction chamber 6 by using either of the gas reserving part 10 and the bypass line 11 when the substrate 7 is treated.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A substrate treatment apparatus, comprising a reaction tube (203) and a heater (207) heating a silicon wafer (200), wherein trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tube (203) to generate Al2O3 film on the surface of the wafer (200). The apparatus also comprises supply tubes (232a) and (232b) for flowing the ozone and TMA and a nozzle (233) supplying gas into the reaction tube (203). The two supply tubes (232a) and (232b) are connected to the nozzle (233) disposed inside the heater (207) in a zone inside the reaction tube (203) where a temperature is lower than a temperature near the wafer (200) and the ozone and TMA are supplied into the reaction tube (203) through the nozzle (233).

Abstract: A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7, and a gas reserving part 10 connected to the reaction chamber 6, having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the gas inside the reaction chamber 6 and reserving gas supplied to the reaction chamber 6, and reserving the gas to be supplied to the reaction chamber 6 midway in the gas supply pipe, and a bypass line 11 bypassing the gas reserving part 10, the gas receiving part 10 being arranged parallel with the bypass line, and a control part 60 supplying the treating gas to the reaction chamber 6 by using either of the gas reserving part 10 and the bypass line 11 when the substrate 7 is treated.

Abstract: A substrate processing apparatus includes: a reaction tube; a gas introducing tube which is in communication with said reaction tube; a gas exhausting tube having a closing member, and a controller which controls an opening of the closing member to substantially stop exhaustion through the exhausting tube from a predetermined point of time before cleaning gas is supplied from said gas introducing tube into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube such that there exists a state in which exhaustion from the gas exhausting tube is stopped while the cleaning gas is supplied from the gas introducing tube into the reaction tube to fill the reaction tube with the cleaning gas under control of the controller.

Abstract: A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopp

Abstract: A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopp

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A substrate processing apparatus includes: a reaction tube; a gas introducing tube which is in communication with said reaction tube; a gas exhausting tube having a closing member, and a controller which controls an opening of the closing member to substantially stop exhaustion through the exhausting tube from a predetermined point of time before cleaning gas is supplied from said gas introducing tube into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube such that there exists a state in which exhaustion from the gas exhausting tube is stopped while the cleaning gas is supplied from the gas introducing tube into the reaction tube to fill the reaction tube with the cleaning gas under control of the controller.

Abstract: A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopp

Abstract: A substrate processing apparatus can efficiently use a gas supplied into a reaction tube by improving a shape of a gas nozzle. A cylinder reaction tube 12 is vertically disposed, and openings of a furnace opening flange 13 is airtightly sealed with a seal cap 14, and a boat 15 onto which wafers W as substrates are loaded in a multi-storied fashion is inserted into the reaction tube 12. A gas is supplied from a nozzle 21 to a plurality of wafers W in the cylindrical reaction tube 12 to deposit a thin film on the wafers W. The nozzle 21 is provided creepingly along an inner wall 22 of the tube in a tube axial direction of the cylinder reaction tube 12. In addition, the nozzle 21 has a nozzle space therein which has an extent of 45° or more and 180° or less in a circumferential direction within the tube. A plurality of gas nozzle openings 24 of the nozzle 21 are provided such that the nozzle openings 24 correspond to the respective wafers W so that a gas flows on the respective wafers W.