Patents by Inventor Toru Kakuda

Toru Kakuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11168396
    Abstract: There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: November 9, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Toru Kakuda, Masahisa Okuno, Katsuhiko Yamamoto, Takuya Joda, Sadayoshi Horii
  • Publication number: 20210343507
    Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
    Type: Application
    Filed: July 14, 2021
    Publication date: November 4, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hidehiro YANAI, Shin HIYAMA, Toru KAKUDA, Toshiya SHIMADA, Tomihiro AMANO
  • Patent number: 11101111
    Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
    Type: Grant
    Filed: August 6, 2020
    Date of Patent: August 24, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hidehiro Yanai, Shin Hiyama, Toru Kakuda, Toshiya Shimada, Tomihiro Amano
  • Patent number: 10985017
    Abstract: Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: April 20, 2021
    Assignee: Kokusai Electric Corporation
    Inventors: Katsuhiko Yamamoto, Takuya Joda, Toru Kakuda, Sadayoshi Horii
  • Publication number: 20200381221
    Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
    Type: Application
    Filed: August 6, 2020
    Publication date: December 3, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hidehiro YANAI, Shin HIYAMA, Toru KAKUDA, Toshiya SHIMADA, Tomihiro AMANO
  • Patent number: 10763084
    Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: September 1, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hidehiro Yanai, Shin Hiyama, Toru Kakuda, Toshiya Shimada, Tomihiro Amano
  • Publication number: 20200002816
    Abstract: There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.
    Type: Application
    Filed: September 13, 2019
    Publication date: January 2, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Toru KAKUDA, Masahisa OKUNO, Katsuhiko YAMAMOTO, Takuya JODA, Sadayoshi HORII
  • Publication number: 20190304778
    Abstract: Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).
    Type: Application
    Filed: February 26, 2019
    Publication date: October 3, 2019
    Inventors: Katsuhiko YAMAMOTO, Takuya JODA, Toru KAKUDA, Sadayoshi HORII
  • Publication number: 20190003047
    Abstract: Described herein is a technique capable of preventing an occurrence of the metal contamination in a vaporizer for vaporizing a liquid source. According to the technique described herein, there is provided a vaporizer including: a vaporization vessel constituted by a quartz body; and an atomizer made of a fluorine resin and configured to atomize a liquid source using a carrier gas (atomization gas) and to supply the atomized liquid source into the vaporization vessel.
    Type: Application
    Filed: September 7, 2018
    Publication date: January 3, 2019
    Inventors: Hideto TATENO, Akinori TANAKA, Daisuke HARA, Masahisa OKUNO, Takuya JODA, Takashi TSUKAMOTO, Sadayoshi HORII, Toru KAKUDA
  • Publication number: 20180204742
    Abstract: A substrate processing apparatus, includes: a process chamber accommodating a substrate; a vaporizer vaporizing a liquid precursor to generate reaction gas and deliver a processing gas containing the reaction gas and a carrier gas, the vaporizer including: a vaporization vessel; and a heater heating the liquid precursor introduced into the vessel; a carrier gas flow rate controller controlling flow rate of the carrier gas supplied to the vaporizer; a liquid precursor flow rate controller controlling flow rate of the liquid precursor; a processing gas supply pipe introducing the processing gas delivered from the vaporizer into the process chamber; and a gas concentration sensor detecting a gas concentration of the reaction gas contained in the processing gas delivered from the vaporizer into the processing gas supply pipe.
    Type: Application
    Filed: March 13, 2018
    Publication date: July 19, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto TATENO, Daisuke HARA, Masahisa OKUNO, Takuya JODA, Takashi TSUKAMOTO, Akinori TANAKA, Toru KAKUDA, Sadayoshi HORII
  • Publication number: 20180144908
    Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low.
    Type: Application
    Filed: January 17, 2018
    Publication date: May 24, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC
    Inventors: Hidehiro YANAI, Shin HIYAMA, Toru KAKUDA, Toshiya SHIMADA, Tomihiro AMANO
  • Patent number: 9911580
    Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: March 6, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hidehiro Yanai, Shin Hiyama, Toru Kakuda, Toshiya Shimada, Tomihiro Amano
  • Patent number: 9793112
    Abstract: To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: October 17, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takuya Joda, Toru Kakuda, Masahisa Okuno, Hideto Tateno
  • Publication number: 20160203976
    Abstract: To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.
    Type: Application
    Filed: March 23, 2016
    Publication date: July 14, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takuya JODA, Toru KAKUDA, Masahisa OKUNO, Hideto TATENO
  • Publication number: 20120132228
    Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
    Type: Application
    Filed: November 29, 2011
    Publication date: May 31, 2012
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hidehiro Yanai, Shin Hiyama, Toru Kakuda, Toshiya Shimada, Tomihiro Amano
  • Publication number: 20090176381
    Abstract: There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus that are designed to suppress a popping phenomenon and reduce residues remaining on a substrate in a photoresist removing process. Oxygen gas and hydrogen gas are supplied to a plasma generating chamber while maintaining the hydrogen atom/oxygen atom ratio of the oxygen and hydrogen gases equal to or higher than 3, and the oxygen gas and the hydrogen gas are excited into plasma in the plasma generating chamber so as to remove photoresist from a substrate accommodated in a treatment chamber installed contiguous to the plasma generating chamber.
    Type: Application
    Filed: December 29, 2008
    Publication date: July 9, 2009
    Inventors: Shin HIYAMA, Toru Kakuda, Yukitomo Hirochi
  • Publication number: 20080096392
    Abstract: An ashing system capable of restraining etching and damage of an oxide film or a nitride film on a semiconductor substrate and ashing a resist uniformly at a very high rate is to be provided. The ashing system includes a reaction tube, a coil and a high frequency power source for inducing and maintaining a high frequency gas discharge at inside of the reaction tube, and a chamber including a susceptor for holding a semiconductor substrate a and directly connected to the reaction tube, in which only oxygen gas is introduced into the reaction tube while exhausting inside of the reaction tube and inside of the chamber, and a pressure at inside of the reaction tube and inside of the chamber in ashing falls in a range equal to or higher than 250 Pa and equal to or lower than 650 Pa.
    Type: Application
    Filed: October 3, 2007
    Publication date: April 24, 2008
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventor: Toru Kakuda