Patents by Inventor Toru Kita

Toru Kita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160045469
    Abstract: Provided are composition and/or methods useful in preventing onset and/or recurrence of cardiovascular events, especially in patients who have escaped the unstable period after cardiovascular angioplasty or in hyperlipidemia patients who have been treated with HMG-CoA RI.
    Type: Application
    Filed: October 29, 2015
    Publication date: February 18, 2016
    Applicant: MOCHIDA PHARMACEUTICAL CO., LTD.
    Inventors: Mitsuhiro YOKOYAMA, Hideki ORIGASA, Masunori MATSUZAKI, Yuji MATSUZAWA, Yasushi SAITO, Yuichi ISHIKAWA, Shinichi OIKAWA, Jun SASAKI, Hitoshi HISHIDA, Hiroshige ITAKURA, Toru KITA, Akira KITABATAKE, Noriaki NAKAYA, Toshiie SAKATA, Kazuyuki SHIMADA, Kunio SHIRATO
  • Patent number: 9198892
    Abstract: Provided are composition and/or methods useful in preventing onset and/or recurrence of cardiovascular events, especially in patients who have escaped the unstable period after cardiovascular angioplasty or in hyperlipidemia patients who have been treated with HMG-CoA RI.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: December 1, 2015
    Assignee: MOCHIDA PHARMACEUTICAL CO., LTD.
    Inventors: Mitsuhiro Yokoyama, Hideki Origasa, Masunori Matsuzaki, Yuji Matsuzawa, Yasushi Saito, Yuichi Ishikawa, Shinichi Oikawa, Jun Sasaki, Hitoshi Hishida, Hiroshige Itakura, Toru Kita, Akira Kitabatake, Noriaki Nakaya, Toshiie Sakata, Kazuyuki Shimada, Kunio Shirato
  • Patent number: 8809981
    Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: August 19, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masanobu Ando, Toru Gotoda, Toru Kita
  • Patent number: 8367725
    Abstract: Provided are composition and/or methods useful in preventing onset and/or recurrence of cardiovascular events, especially in patients who have escaped the unstable period after cardiovascular angioplasty or in hyperlipidemia patients who have been treated with HMG-CoA RI.
    Type: Grant
    Filed: July 7, 2006
    Date of Patent: February 5, 2013
    Assignee: Mochida Pharmaceutical Co., Ltd.
    Inventors: Mitsuhiro Yokoyama, Hideki Origasa, Masunori Matsuzaki, Yuji Matsuzawa, Yasushi Saito, Yuichi Ishikawa, Shinichi Oikawa, Jun Sasaki, Hitoshi Hishida, Hiroshige Itakura, Toru Kita, Akira Kitabatake, Noriaki Nakaya, Toshiie Sakata, Kazuyuki Shimada, Kunio Shirato
  • Publication number: 20120115951
    Abstract: A cardiac myocyte protective agent, comprising a compound represented by the formula (Ia) below, a pharmaceutically acceptable salt thereof, or a solvate thereof:
    Type: Application
    Filed: September 8, 2006
    Publication date: May 10, 2012
    Applicant: Eisai R & D Managment Co., Ltd
    Inventors: Masaharu Akao, Akinori Akaike, Toru Kita, Yasuki Kihara
  • Publication number: 20120095584
    Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.
    Type: Application
    Filed: December 20, 2011
    Publication date: April 19, 2012
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masanobu Ando, Toru Gotoda, Toru Kita
  • Publication number: 20120070958
    Abstract: In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.
    Type: Application
    Filed: September 21, 2011
    Publication date: March 22, 2012
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuyoshi Furukawa, Yoshinori Natsume, Yasuhiko Akaike, Shinji Nunotani, Wakana Nishiwaki, Masaaki Ogawa, Toru Kita, Hidefumi Yasuda
  • Patent number: 8101490
    Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.
    Type: Grant
    Filed: March 22, 2010
    Date of Patent: January 24, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masanobu Ando, Toru Gotoda, Toru Kita
  • Publication number: 20110039356
    Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.
    Type: Application
    Filed: March 22, 2010
    Publication date: February 17, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masanobu Ando, Toru Gotoda, Toru Kita
  • Publication number: 20070021504
    Abstract: Provided are composition and/or methods useful in preventing onset and/or recurrence of cardiovascular events, especially in patients who have escaped the unstable period after cardiovascular angioplasty or in hyperlipidemia patients who have been treated with HMG-CoA RI.
    Type: Application
    Filed: July 7, 2006
    Publication date: January 25, 2007
    Applicant: MOCHIDA PHARMACEUTICAL CO., LTD.
    Inventors: Mitsuhiro Yokoyama, Hideki Origasa, Masunori Matsuzaki, Yuji Matsuzawa, Yasushi Saito, Yuichi Ishikawa, Shinichi Oikawa, Jun Sasaki, Hitoshi Hishida, Hiroshige Itakura, Toru Kita, Akira Kitabatake, Noriaki Nakaya, Toshiie Sakata, Kazuyuki Shimada, Kunio Shirato
  • Publication number: 20050263754
    Abstract: In a substrate for growth of a chemical compound semiconductor, at least on one surface of a Si single crystal substrate 2 with a thickness of 300 ?m, a porous Si single crystal 4 is formed. Pores of the porous Si single crystal 4 is opened outward. The surface of the porous Si single crystal 4 is covered by a 3C—SiC single crystal layer 3 with a thickness of 1 nm. The thickness of the porous Si single crystal 4 is, for example, 10 ?m.
    Type: Application
    Filed: September 30, 2004
    Publication date: December 1, 2005
    Inventors: Jun Komiyama, Yoshihisa Abe, Shuniti Suzuki, Hideo Nakanishi, Toru Kita
  • Patent number: 5197429
    Abstract: A position sensor for a valve or the like includes a first electrode disposed about the valve or a member associated therewith in a manner that the interfacial area betwen the valve and the electrode remains constant irrespective of the position of the valve. One or more second electrodes are disposed in a manner that the interfacial area between the valve and the electrode varies with the position of the valve. By sensing the change in electrostatic capacity between the electrodes the position of the valve may be detected. The sensor finds application in a fuel injection pump wherein it permits a very compact solenoid (motor)/sensor arrangement.
    Type: Grant
    Filed: December 1, 1983
    Date of Patent: March 30, 1993
    Assignee: Nissan Motor Co. Ltd.
    Inventor: Toru Kita
  • Patent number: 5093363
    Abstract: A 2,4,6-substituted phenol having the formula (I): ##STR1## wherein X is S or CH.sub.2 ; R.sup.1 and R.sup.2 are the same or different from each other and each is a lower alkyl group; R.sup.3 is a group of the formula: ##STR2## in which R.sup.4 is hydrogen atom or a lower alkyl group; R.sup.5 and R.sup.6 are the same or different from each other and each is hydrogen atom, a lower alkyl group, or a phenyl group which may be substituted,or a pharmaceutically acceptable salt thereof is useful as an active agent in a pharmaceutical composition. The pharmaceutical composition comprises a therapeutically effective amount of a compound having the formula (I), as an effective ingredient, in association with a pharmaceutically acceptable substantially nontoxic carrier or excipient. The pharmaceutical composition can be useful in the treatment of lipemia of mammals. Additionally the compounds can be used as antiatherosclerotic agents and antilipenic agents.
    Type: Grant
    Filed: August 14, 1990
    Date of Patent: March 3, 1992
    Assignee: Shionogi & Co., Ltd.
    Inventors: Toru Kita, Hiroshi Harada, Eiichi Ohsugi, Toshiro Konoike
  • Patent number: 5084214
    Abstract: Phenolic thioethers of the formula: ##STR1## wherein R is a hydrogen atom or a protective group for carboxyl, X is a straight or branched C.sub.4 -C.sub.15 alkylene group, a straight or branched C.sub.1 -C.sub.15 alkylene group having a phenylene group or a straight or branched C.sub.2 -C.sub.15 alkenylene group, and their salts, which inhibit the denaturation of low density lipoproteins (LDL) and the incorporation of LDL by macrophages and are useful as anti-arteriosclerosis agents.
    Type: Grant
    Filed: May 31, 1989
    Date of Patent: January 28, 1992
    Assignee: Shionogi & Co., Ltd.
    Inventors: Toru Kita, Shuh Narumiya, Masayuki Narisada, Fumihiko Watanabe, Saichi Matsumoto, Masami Doteuchi
  • Patent number: 5029118
    Abstract: A system and method for canceling a periodic noise superposed on a real signal component of an original signal. The system comprises: a synchronous adaptive noise canceling filter which sequentially produces and corrects a noise component at each predetermined phase of the original signal in synchronization with a signal having a corelationship to a period of the original signal; a subtractor which subtracts the noise signal component produced by the synchronous adaptive noise canceling filter from the original signal so as to produce the real signal component as a target signal; and a signal generator which produces and sends a signal to the synchronous adaptive noise canceling filter so that the synchronous adaptive noise canceling filter produces a real periodic noise signal component without the real signal component on the basis of the signal component derived previously from the subtractor and original signal.
    Type: Grant
    Filed: October 11, 1989
    Date of Patent: July 2, 1991
    Assignee: Nissan Motor Co. Ltd.
    Inventors: Yuji Nakajima, Toru Kita
  • Patent number: 4954514
    Abstract: (Di-tert-butylhydroxyphenyl)thio derivatives of the formula: ##STR1## wherein R is cyano, carbamoyl, or 5-tetrazolyl; n is an integer of 2 to 6; provided that when R is cyano, n is not 2; or a pharmaceutically acceptable salt thereof; useful in treating arterioschlerosis, ulcer, inflammation, allergy, or the like.
    Type: Grant
    Filed: December 18, 1989
    Date of Patent: September 4, 1990
    Assignee: Shionogi & Co, Ltd
    Inventors: Toru Kita, Shuh Narumiya, Masayuki Narisada, Fumrhio Watanabe, Masami Doteuchi, Takuji Mizui
  • Patent number: 4711134
    Abstract: A torque detector for detection of torque on a driving shaft consisting of a pair of separated shafts. The detector comprises a magnetostrictive cylinder with one end coupled to one separated shaft and the other end coupled to the other separated shaft through an elastic member.
    Type: Grant
    Filed: August 9, 1985
    Date of Patent: December 8, 1987
    Assignee: Nissan Motor Co., Ltd.
    Inventor: Toru Kita
  • Patent number: 4646576
    Abstract: An a.c. generator is electrically connected to an exciting coil unit to supply alternating current to the exciting coil unit. A sensing coil unit is electromagnetically coupled to the exciting coil unit via ferromagnetic material of a shaft. An electrical signal induced across the sensing coil unit varies as a function of torque on the shaft. A balancing member electromagnetically coupled to the sensing coil unit includes a removable segment to zero-adjust the electrical signal when no torque is applied to the shaft.
    Type: Grant
    Filed: May 20, 1985
    Date of Patent: March 3, 1987
    Assignee: Nissan Motor Company, Limited
    Inventor: Toru Kita
  • Patent number: 4646070
    Abstract: The degree of deterioration of lubricating oil used in an internal combustion engine is detected by measuring the lubricating oil dielectric constant with a pair of spaced sensor capacitor electrodes in the lubricating oil. The sensor capacitor is connected to a fixed capacitor to form a voltage divider connected across a constant frequency AC voltage source so that a developed voltage across the sensor capacitor corresponds to the lubricating oil dielectric constant. The frequency of the AC voltage is set at a value ranging from 50 KHz to 500 KHz.
    Type: Grant
    Filed: November 12, 1982
    Date of Patent: February 24, 1987
    Assignee: Nissan Motor Company, Limited
    Inventors: Seishi Yasuhara, Hiroshi Kobayashi, Toru Kita, Hideyuki Saito
  • Patent number: 4572005
    Abstract: The magnetic head of a magnetostriction torque sensor is covered by a magnetic head holder made of a synthetic resin and supported by an outer tubular member via an elastic supporting member. The magnetic head holder is formed with bearing portions by which an axle to be measured is rotatably supported in such a way that a predetermined clearance is always kept at a constant value between the magnetic head and the axle. Therefore, even if the axle to be measured or the outer tubular member to support the magnetic head deforms or if the concentricity of the outer tubular member with respect to the axle is inferior, it is possible to stably and precisely detect the torque applied to the axle to be measured. The above-mentioned structure of the magnetostriction torque sensor can reduce the manufacturing cost and improve the productivity.
    Type: Grant
    Filed: October 5, 1984
    Date of Patent: February 25, 1986
    Assignee: Nissan Motor Company, Limited
    Inventor: Toru Kita