Patents by Inventor Toru Kita
Toru Kita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160045469Abstract: Provided are composition and/or methods useful in preventing onset and/or recurrence of cardiovascular events, especially in patients who have escaped the unstable period after cardiovascular angioplasty or in hyperlipidemia patients who have been treated with HMG-CoA RI.Type: ApplicationFiled: October 29, 2015Publication date: February 18, 2016Applicant: MOCHIDA PHARMACEUTICAL CO., LTD.Inventors: Mitsuhiro YOKOYAMA, Hideki ORIGASA, Masunori MATSUZAKI, Yuji MATSUZAWA, Yasushi SAITO, Yuichi ISHIKAWA, Shinichi OIKAWA, Jun SASAKI, Hitoshi HISHIDA, Hiroshige ITAKURA, Toru KITA, Akira KITABATAKE, Noriaki NAKAYA, Toshiie SAKATA, Kazuyuki SHIMADA, Kunio SHIRATO
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Patent number: 9198892Abstract: Provided are composition and/or methods useful in preventing onset and/or recurrence of cardiovascular events, especially in patients who have escaped the unstable period after cardiovascular angioplasty or in hyperlipidemia patients who have been treated with HMG-CoA RI.Type: GrantFiled: November 8, 2012Date of Patent: December 1, 2015Assignee: MOCHIDA PHARMACEUTICAL CO., LTD.Inventors: Mitsuhiro Yokoyama, Hideki Origasa, Masunori Matsuzaki, Yuji Matsuzawa, Yasushi Saito, Yuichi Ishikawa, Shinichi Oikawa, Jun Sasaki, Hitoshi Hishida, Hiroshige Itakura, Toru Kita, Akira Kitabatake, Noriaki Nakaya, Toshiie Sakata, Kazuyuki Shimada, Kunio Shirato
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Patent number: 8809981Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.Type: GrantFiled: December 20, 2011Date of Patent: August 19, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Masanobu Ando, Toru Gotoda, Toru Kita
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Patent number: 8367725Abstract: Provided are composition and/or methods useful in preventing onset and/or recurrence of cardiovascular events, especially in patients who have escaped the unstable period after cardiovascular angioplasty or in hyperlipidemia patients who have been treated with HMG-CoA RI.Type: GrantFiled: July 7, 2006Date of Patent: February 5, 2013Assignee: Mochida Pharmaceutical Co., Ltd.Inventors: Mitsuhiro Yokoyama, Hideki Origasa, Masunori Matsuzaki, Yuji Matsuzawa, Yasushi Saito, Yuichi Ishikawa, Shinichi Oikawa, Jun Sasaki, Hitoshi Hishida, Hiroshige Itakura, Toru Kita, Akira Kitabatake, Noriaki Nakaya, Toshiie Sakata, Kazuyuki Shimada, Kunio Shirato
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Publication number: 20120115951Abstract: A cardiac myocyte protective agent, comprising a compound represented by the formula (Ia) below, a pharmaceutically acceptable salt thereof, or a solvate thereof:Type: ApplicationFiled: September 8, 2006Publication date: May 10, 2012Applicant: Eisai R & D Managment Co., LtdInventors: Masaharu Akao, Akinori Akaike, Toru Kita, Yasuki Kihara
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Publication number: 20120095584Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.Type: ApplicationFiled: December 20, 2011Publication date: April 19, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masanobu Ando, Toru Gotoda, Toru Kita
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Publication number: 20120070958Abstract: In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.Type: ApplicationFiled: September 21, 2011Publication date: March 22, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kazuyoshi Furukawa, Yoshinori Natsume, Yasuhiko Akaike, Shinji Nunotani, Wakana Nishiwaki, Masaaki Ogawa, Toru Kita, Hidefumi Yasuda
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Patent number: 8101490Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.Type: GrantFiled: March 22, 2010Date of Patent: January 24, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Masanobu Ando, Toru Gotoda, Toru Kita
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Publication number: 20110039356Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.Type: ApplicationFiled: March 22, 2010Publication date: February 17, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masanobu Ando, Toru Gotoda, Toru Kita
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Publication number: 20070021504Abstract: Provided are composition and/or methods useful in preventing onset and/or recurrence of cardiovascular events, especially in patients who have escaped the unstable period after cardiovascular angioplasty or in hyperlipidemia patients who have been treated with HMG-CoA RI.Type: ApplicationFiled: July 7, 2006Publication date: January 25, 2007Applicant: MOCHIDA PHARMACEUTICAL CO., LTD.Inventors: Mitsuhiro Yokoyama, Hideki Origasa, Masunori Matsuzaki, Yuji Matsuzawa, Yasushi Saito, Yuichi Ishikawa, Shinichi Oikawa, Jun Sasaki, Hitoshi Hishida, Hiroshige Itakura, Toru Kita, Akira Kitabatake, Noriaki Nakaya, Toshiie Sakata, Kazuyuki Shimada, Kunio Shirato
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Publication number: 20050263754Abstract: In a substrate for growth of a chemical compound semiconductor, at least on one surface of a Si single crystal substrate 2 with a thickness of 300 ?m, a porous Si single crystal 4 is formed. Pores of the porous Si single crystal 4 is opened outward. The surface of the porous Si single crystal 4 is covered by a 3C—SiC single crystal layer 3 with a thickness of 1 nm. The thickness of the porous Si single crystal 4 is, for example, 10 ?m.Type: ApplicationFiled: September 30, 2004Publication date: December 1, 2005Inventors: Jun Komiyama, Yoshihisa Abe, Shuniti Suzuki, Hideo Nakanishi, Toru Kita
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Patent number: 5197429Abstract: A position sensor for a valve or the like includes a first electrode disposed about the valve or a member associated therewith in a manner that the interfacial area betwen the valve and the electrode remains constant irrespective of the position of the valve. One or more second electrodes are disposed in a manner that the interfacial area between the valve and the electrode varies with the position of the valve. By sensing the change in electrostatic capacity between the electrodes the position of the valve may be detected. The sensor finds application in a fuel injection pump wherein it permits a very compact solenoid (motor)/sensor arrangement.Type: GrantFiled: December 1, 1983Date of Patent: March 30, 1993Assignee: Nissan Motor Co. Ltd.Inventor: Toru Kita
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Patent number: 5093363Abstract: A 2,4,6-substituted phenol having the formula (I): ##STR1## wherein X is S or CH.sub.2 ; R.sup.1 and R.sup.2 are the same or different from each other and each is a lower alkyl group; R.sup.3 is a group of the formula: ##STR2## in which R.sup.4 is hydrogen atom or a lower alkyl group; R.sup.5 and R.sup.6 are the same or different from each other and each is hydrogen atom, a lower alkyl group, or a phenyl group which may be substituted,or a pharmaceutically acceptable salt thereof is useful as an active agent in a pharmaceutical composition. The pharmaceutical composition comprises a therapeutically effective amount of a compound having the formula (I), as an effective ingredient, in association with a pharmaceutically acceptable substantially nontoxic carrier or excipient. The pharmaceutical composition can be useful in the treatment of lipemia of mammals. Additionally the compounds can be used as antiatherosclerotic agents and antilipenic agents.Type: GrantFiled: August 14, 1990Date of Patent: March 3, 1992Assignee: Shionogi & Co., Ltd.Inventors: Toru Kita, Hiroshi Harada, Eiichi Ohsugi, Toshiro Konoike
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Patent number: 5084214Abstract: Phenolic thioethers of the formula: ##STR1## wherein R is a hydrogen atom or a protective group for carboxyl, X is a straight or branched C.sub.4 -C.sub.15 alkylene group, a straight or branched C.sub.1 -C.sub.15 alkylene group having a phenylene group or a straight or branched C.sub.2 -C.sub.15 alkenylene group, and their salts, which inhibit the denaturation of low density lipoproteins (LDL) and the incorporation of LDL by macrophages and are useful as anti-arteriosclerosis agents.Type: GrantFiled: May 31, 1989Date of Patent: January 28, 1992Assignee: Shionogi & Co., Ltd.Inventors: Toru Kita, Shuh Narumiya, Masayuki Narisada, Fumihiko Watanabe, Saichi Matsumoto, Masami Doteuchi
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Patent number: 5029118Abstract: A system and method for canceling a periodic noise superposed on a real signal component of an original signal. The system comprises: a synchronous adaptive noise canceling filter which sequentially produces and corrects a noise component at each predetermined phase of the original signal in synchronization with a signal having a corelationship to a period of the original signal; a subtractor which subtracts the noise signal component produced by the synchronous adaptive noise canceling filter from the original signal so as to produce the real signal component as a target signal; and a signal generator which produces and sends a signal to the synchronous adaptive noise canceling filter so that the synchronous adaptive noise canceling filter produces a real periodic noise signal component without the real signal component on the basis of the signal component derived previously from the subtractor and original signal.Type: GrantFiled: October 11, 1989Date of Patent: July 2, 1991Assignee: Nissan Motor Co. Ltd.Inventors: Yuji Nakajima, Toru Kita
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Patent number: 4954514Abstract: (Di-tert-butylhydroxyphenyl)thio derivatives of the formula: ##STR1## wherein R is cyano, carbamoyl, or 5-tetrazolyl; n is an integer of 2 to 6; provided that when R is cyano, n is not 2; or a pharmaceutically acceptable salt thereof; useful in treating arterioschlerosis, ulcer, inflammation, allergy, or the like.Type: GrantFiled: December 18, 1989Date of Patent: September 4, 1990Assignee: Shionogi & Co, LtdInventors: Toru Kita, Shuh Narumiya, Masayuki Narisada, Fumrhio Watanabe, Masami Doteuchi, Takuji Mizui
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Patent number: 4711134Abstract: A torque detector for detection of torque on a driving shaft consisting of a pair of separated shafts. The detector comprises a magnetostrictive cylinder with one end coupled to one separated shaft and the other end coupled to the other separated shaft through an elastic member.Type: GrantFiled: August 9, 1985Date of Patent: December 8, 1987Assignee: Nissan Motor Co., Ltd.Inventor: Toru Kita
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Patent number: 4646576Abstract: An a.c. generator is electrically connected to an exciting coil unit to supply alternating current to the exciting coil unit. A sensing coil unit is electromagnetically coupled to the exciting coil unit via ferromagnetic material of a shaft. An electrical signal induced across the sensing coil unit varies as a function of torque on the shaft. A balancing member electromagnetically coupled to the sensing coil unit includes a removable segment to zero-adjust the electrical signal when no torque is applied to the shaft.Type: GrantFiled: May 20, 1985Date of Patent: March 3, 1987Assignee: Nissan Motor Company, LimitedInventor: Toru Kita
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Patent number: 4646070Abstract: The degree of deterioration of lubricating oil used in an internal combustion engine is detected by measuring the lubricating oil dielectric constant with a pair of spaced sensor capacitor electrodes in the lubricating oil. The sensor capacitor is connected to a fixed capacitor to form a voltage divider connected across a constant frequency AC voltage source so that a developed voltage across the sensor capacitor corresponds to the lubricating oil dielectric constant. The frequency of the AC voltage is set at a value ranging from 50 KHz to 500 KHz.Type: GrantFiled: November 12, 1982Date of Patent: February 24, 1987Assignee: Nissan Motor Company, LimitedInventors: Seishi Yasuhara, Hiroshi Kobayashi, Toru Kita, Hideyuki Saito
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Patent number: 4572005Abstract: The magnetic head of a magnetostriction torque sensor is covered by a magnetic head holder made of a synthetic resin and supported by an outer tubular member via an elastic supporting member. The magnetic head holder is formed with bearing portions by which an axle to be measured is rotatably supported in such a way that a predetermined clearance is always kept at a constant value between the magnetic head and the axle. Therefore, even if the axle to be measured or the outer tubular member to support the magnetic head deforms or if the concentricity of the outer tubular member with respect to the axle is inferior, it is possible to stably and precisely detect the torque applied to the axle to be measured. The above-mentioned structure of the magnetostriction torque sensor can reduce the manufacturing cost and improve the productivity.Type: GrantFiled: October 5, 1984Date of Patent: February 25, 1986Assignee: Nissan Motor Company, LimitedInventor: Toru Kita