Abstract: A signal processing device is provided which is capable of suppressing a voltage change of a power supply when output signals from a plurality of signal sources are read, and capable of outputting a stable signal at a high sensitivity, and an image pickup apparatus using such a signal processing device is also provided. The signal processing device has: a plurality of terminals connectable to a plurality of signal sources; and a read circuit for converting signals input from the terminals into serial signals and outputting the serial signals, wherein: the read circuit comprises a holding capacitor connected to each of the terminals, a transfer switch for transferring a signal held in the holding capacitor to a common signal line, and a shift register for driving the transfer switch; and a semiconductor layer under the common signal line has a conductivity type opposite to a first conductivity type of a semiconductor substrate.

Abstract: An image capturing system comprises an image sensor and a mechanical shutter, wherein a charge accumulation operation of the pixels of each row of the image sensor starts at a timing of ending a reset operation, and ends at a timing of causing the mechanical shutter to set a light-shielded state of the pixels of each row, the reset operation of the pixels of each row of the image sensor is performed to select rows sequentially in a first direction from an upper surface to a lower surface of a housing, the mechanical shutter ends exposure of the image sensor while causing a shutter curtain to run in the first direction, and a readout operation of the pixels of each row of the image sensor is done to select rows sequentially in a second direction reverse to the first direction.

Abstract: A photoelectric conversion apparatus includes a pixel unit having a plurality of pixels arranged in a matrix, a plurality of block lines to which signals are supplied from the pixels, transfer switches used to supply the signals from the block lines to a common signal line, and a driving circuit configured to drive the pixels, the block lines, and the transfer switches. The block lines have resetting units used to reset potentials of the block lines. With this configuration, a signal reading operation is performed at high speed in the photoelectric conversion apparatus.

Abstract: An object of the present invention is to simultaneously realize the enlargement of a dynamic range and the downsizing of a pixel. An additional capacitor CS is composed by using: a first capacitor formed of a first diffusion layer, a second diffusion layer and a P well by layering the P well, the first diffusion layer, a first dielectric film, a first polysilicon layer, a second dielectric film and a second polysilicon layer; a second capacitor formed of the second diffusion layer, the first polysilicon layer and the first dielectric film; and a third capacitor formed of the first polysilicon layers, a second polysilicon layer, and a second dielectric film. Thereby, the additional capacitor CS for accumulating carriers overflown from a photodiode PD can secure a required capacitance value while making its size as small as possible.

Abstract: The solid image pickup device of the present invention comprises a photoelectric conversion part, a charge-voltage conversion part for converting electric charges from the photoelectric conversion part to voltage signals, a signal amplifier for amplifying the voltage signals generated in the charge-voltage conversion part, charge transfer means for transferring photo-electric charges from the photoelectric conversion part to the charge-voltage conversion part, and means for applying a certain voltage to a charge-voltage conversion part, wherein at least two readout operations for reading out the photo-electric charges accumulated during a period of accumulating photo-electric charges in the photoelectric conversion part via a signal amplifier.

Abstract: There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.

Abstract: An image pickup apparatus including: a plurality of photoelectric conversion elements for photoelectrically converting light from an object, a first output line to which signals from the plurality of photoelectric conversion elements are successively outputted, a plurality of first switches connected to the first output line to output the signals from the plurality of photoelectric conversion elements to the first output line, a second output line to which a reference signal is supplied, a plurality of second switches connected to the second output line to supply the reference signal to the second output line, a scanning circuit which controls the plurality of first switches and the plurality of second switches, and a differential circuit which obtains a difference between the signal from the first output line and the signal from the second output line.

Abstract: An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged.

Abstract: An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

Abstract: A signal reading apparatus includes first and second common signal lines from which a signal from a signal generation unit is output and first and second amplifier circuits and a switch configured to control a conductive state of the first and the second common signal lines. The signal reading apparatus includes a first signal reading method of reading a signal from the first common signal line after being amplified in the first amplifier circuit and reading a signal from the second common signal line after being amplified in the second amplifier circuit and a second signal reading method of turning ON the switch to read the signal from the first common signal line and the signal from the second common signal line individually after being amplified in the first amplifier circuit. The signal reading apparatus includes a control unit for controlling between the first and second signal reading methods.

Abstract: A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (50) includes a pixel (10) which outputs a signal to a signal line (107), an amplifier which amplifies the signal supplied via the signal line (107), and an isolation switch (121) inserted between a signal line (108) and the input node of the amplifier. The pixel (10) includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line (109) in accordance with the potential of the FD. The isolation switch (121) is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel (10) transits.

Abstract: To provide a configuration including a fully differential amplifier in which decrease in a reading speed can be suppressed. A photoelectric conversion apparatus according to the present invention includes a pixel area where a plurality of pixels are arranged; an amplifier configured to amplify a signal from the pixel area; a plurality of signal paths for transmitting the signals from the pixel area to the amplifier. The amplifier is a fully differential amplifier which includes a plurality of input terminals including a first input terminal and a second input terminal to which the signals from the plurality of signal paths are supplied and a plurality of output terminals including a first output terminal and a second output terminal and the input terminals and the output terminals have no feedback path provided therebetween.

Abstract: A photoelectric conversion device includes a pixel array portion, signal processing portion, common readout circuit, and common signal line. The signal processing portion includes the first power line and the second power line which is formed on the opposite side to the first power line when viewed from the common signal line. The common signal line has a portion formed along the signal processing portion to transfer, to the common readout circuit, a signal supplied from the signal processing portion. A cross connection line which crosses the portion of the common signal line along the signal processing portion connects the first and second power lines.

Abstract: A photoelectric conversion device includes a pixel unit including a photoelectric converter, an amplifier arranged on the output side of the pixel unit, an output unit arranged on the output side of the amplifier, a first restriction circuit, and a second restriction circuit. The first restriction circuit restricts, between the amplifier and the output unit, a noise level read out from the pixel unit via the amplifier in reading out the noise level from the pixel unit. The second restriction circuit restricts, between the photoelectric converter and the amplifier, a noise level to be provided to the amplifier in reading out the noise level from the pixel unit.

Abstract: The solid image pickup device of the present invention comprises a photoelectric conversion part, a charge-voltage conversion part for converting electric charges from the photoelectric conversion part to voltage signals, a signal amplifier for amplifying the voltage signals generated in the charge-voltage conversion part, charge transfer means for transferring photo-electric charges from the photoelectric conversion part to the charge-voltage conversion part, and means for applying a certain voltage to a charge-voltage conversion part, wherein at least two readout operations for reading out the photo-electric charges accumulated during a period of accumulating photo-electric charges in the photoelectric conversion part via a signal amplifier.

Abstract: An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

Abstract: There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.

Abstract: An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged.

Abstract: MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate.

Abstract: A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type.