Abstract: Provided is a transistor oscillating circuit capable of reducing change in oscillating frequency due to change in power supply voltage by improving a base bias circuit of an oscillating transistor 3. In a transistor oscillating circuit, an oscillating circuit 3 of which an emitter is connected to ground through an emitter load resistor 8, a resonance circuit 2 is connected between a base and the ground, and a collector is connected to a power supply terminal, is included, base bias resistors 9 and 10 are connected between the base and the collector and between the base and the emitter of the oscillating transistor 3, and a capacitor 7 is connected between the emitter of the oscillating transistor 3 and AC-ground.

Abstract: Provided is a transistor oscillating circuit capable of reducing change in oscillating frequency due to change in power supply voltage by improving a base bias circuit of an oscillating transistor 3. In a transistor oscillating circuit, an oscillating circuit 3 of which an emitter is connected to ground through an emitter load resistor 8, a resonance circuit 2 is connected between a base and the ground, and a collector is connected to a power supply terminal, is included, base bias resistors 9 and 10 are connected between the base and the collector and between the base and the emitter of the oscillating transistor 3, and a capacitor 7 is connected between the emitter of the oscillating transistor 3 and AC-ground.

Abstract: An oscillation circuit comprises first and second transistors and a load. The first transistor includes a base inputted an oscillation signal, an emitter connected to a ground potential, and a collector. The second transistor includes a collector connected to a power supply potential, a gate and an emitter. The load has one end connected to the collector of the first transistor, and the other end connected to the emitter of the second transistor, and causes a voltage drop proportional to the power supply potential. The voltage drop caused by the load reduces dependency of a base-collector voltage of the first transistor upon the power supply potential.

Abstract: A semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is a collector region of a first conductivity type. The second semiconductor region is provided on the first semiconductor region and serves as a collector region whose impurity concentration is lower than that of the first semiconductor region. The third semiconductor region is provided in the second semiconductor region and serves as a base region of a second conductivity type. The fourth semiconductor region is provided in the third semiconductor region and serves as an emitter region of the first conductivity type. The second semiconductor region is thinner than a depletion layer formed in the collector region when a potential difference between the base region and the emitter region is substantially equal to a potential difference between the collector region and the emitter region.

Abstract: An oscillation circuit comprises first and second transistors and a load. The first transistor includes a base inputted an oscillation signal, an emitter connected to a ground potential, and a collector. The second transistor includes a collector connected to a power supply potential, a gate and an emitter. The load has one end connected to the collector of the first transistor, and the other end connected to the emitter of the second transistor, and causes a voltage drop proportional to the power supply potential. The voltage drop caused by the load reduces dependency of a base-collector voltage of the first transistor upon the power supply potential.

Abstract: A semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is a collector region of a first conductivity type. The second semiconductor region is provided on the first semiconductor region and serves as a collector region whose impurity concentration is lower than that of the first semiconductor region. The third semiconductor region is provided in the second semiconductor region and serves as a base region of a second conductivity type. The fourth semiconductor region is provided in the third semiconductor region and serves as an emitter region of the first conductivity type. The second semiconductor region is thinner than a depletion layer formed in the collector region when a potential difference between the base region and the emitter region is substantially equal to a potential difference between the collector region and the emitter region.