Abstract: A terminal is constructed to be connected to an attachment target by a bolt, and includes a first surface, a through hole, and an asperity portion. A material for the terminal is aluminum, etc. The terminal has a Vickers hardness equal to or higher than 80 HV. A ratio S1/S2 between a first area S1 and a second area S2 while the first surface and the attachment target are connected to each other by tightening of the bolt is equal to or lower than 0.8. The first area S1 is an area of a region where the first surface is in contact with the attachment target at a pressure equal to or higher than 25 MPa. The second area S2 is an area of an annular region around the bolt. The first area S1 is equal to or larger than 5 mm2.

Abstract: The aluminum alloy in the cross-section of the surface layer region of the aluminum alloy plate contains a compound containing one or more elements selected from the group consisting of silicon, magnesium, iron, copper, manganese, chromium, zinc, zirconium, and titanium, and aluminum. The number of fields of view containing the compound having an equivalent circle diameter of 5 ?m or more out of 10 fields of view extracted from the cross-section is 3 or less. In the cross-section, the number density of the compound having an equivalent circle diameter of 1.5 ?m or more and less than 5.0 ?m is 0.0010 per ?m2 or less, and the area ratio of the compound having an equivalent circle diameter of 0.5 ?m or more is 0.1% or more and less than 1.0%.

Abstract: A composite material has a plate shape and has a first surface and a second surface. The second surface is opposite to the first surface. The composite material includes a plurality of first layers and at least one second layer. The first layers and the second layer are alternately layered along a thickness direction of the composite material such that the first layers are located at the first surface and the second surface. Each of the first layers is a layer including copper. The second layer is a layer of a molybdenum powder compact impregnated with copper. A compressive residual stress of 50 MPa or less acts on each of the first layer located at the first surface and the first layer located at the second surface.

Abstract: A bonding apparatus includes: a clamper able to clamp a wire between a pair of arms; a horn, in which a first through hole able to hold a capillary, and a second through hole adjacent to the first through hole and penetrating the horn in an up-down direction are further formed; and a bonding stage able to carry a workpiece. An alignment method for aligning a horn and a damper of a bonding apparatus with each other includes: disposing a mirror surface to be parallel to a bonding stage; aligning a mirror image of a second through hole reflected on the mirror surface with a center of the second through hole when the mirror surface is viewed through the second through hole; and aligning the damper based on a position of the mirror image and the horn.

Abstract: The cannula includes an attachment portion configured to be attached in nasal cavities of a subject, and a junction portion configured to be connected to the attachment portion. A first connection portion is provided with a single medical gas flow path for supplying, to the subject, a medical gas from the medical gas supply device. The first connection portion being provided to the junction portion on a side of a medical gas supply device. A second connection portion is provided with a single measurement pipe for measuring a respiratory condition of the subject. The second connection portion being provided to the junction portion on a side of a respiration measurement module.

Abstract: A bonding apparatus includes: a clamper able to clamp a wire between a pair of arms; a horn, in which a first through hole able to hold a capillary, and a second through hole adjacent to the first through hole and penetrating the horn in an up-down direction are further formed; and a bonding stage able to carry a workpiece. An alignment method for aligning a horn and a damper of a bonding apparatus with each other includes: disposing a mirror surface to be parallel to a bonding stage; aligning a mirror image of a second through hole reflected on the mirror surface with a center of the second through hole when the mirror surface is viewed through the second through hole; and aligning the damper based on a position of the mirror image and the horn.

Abstract: The aluminum alloy in the cross-section of the surface layer region of the aluminum alloy plate contains a compound containing one or more elements selected from the group consisting of silicon, magnesium, iron, copper, manganese, chromium, zinc, zirconium, and titanium, and aluminum. The number of fields of view containing the compound having an equivalent circle diameter of 5 ?m or more out of 10 fields of view extracted from the cross-section is 3 or less. In the cross-section, the number density of the compound having an equivalent circle diameter of 1.5 ?m or more and less than 5.0 ?m is 0.0010 per ?m2 or less, and the area ratio of the compound having an equivalent circle diameter of 0.5 ?m or more is 0.1% or more and less than 1.0%.

Abstract: A composite material includes a plurality of first layers and a plurality of second layers. The total number of the first and second layers is 5 or more. The first and second layers are stacked alternately in the thickness direction of the composite material, such that the first layer is located at each of the first and second surfaces. The first layers are formed from a metal material containing copper as a main component. The second layer includes a molybdenum plate and a coper filler. The molybdenum plate has first and second faces that are each an end face in the thickness direction, and a plurality of openings extending through the molybdenum plate from the first face to the second face.

Abstract: In a pickup apparatus of a semiconductor die, a suction surface sucking a wafer sheet is a curved surface which is curved convexly upward, and after raising a stage to push up the wafer sheet, a control part creates a vacuum inside the stage to suck the wafer sheet to the suction surface, and after sucking the wafer sheet to the suction surface, the control part protrudes a moving element from the suction surface, and picks up a semiconductor die from the wafer sheet by a collet.

Abstract: A mounting apparatus for stacking and mounting two or more semiconductor chips at a plurality of locations on a substrate includes: a first mounting head for forming, at a plurality of locations on the substrate, temporarily stacked bodies in which two or more semiconductor chips are stacked in a temporarily press-attached state; and a second mounting head for forming chip stacked bodies by sequentially finally press-attaching the temporarily stacked bodies formed at the plurality of locations. The second mounting head includes: a press-attaching tool for heating and pressing an upper surface of a target temporarily stacked body to thereby finally press-attach the two or more semiconductor chips configuring the temporarily stacked body altogether; and one or more heat-dissipation tools having a heat-dissipating body which, by coming into contact with an upper surface of another stacked body positioned around the target temporarily stacked body, dissipates heat from the another stacked body.

Abstract: An aluminum alloy material comprising a composition containing no less than 1.2 at % and no more than 6.5 at % of Fe, no less than 0.15 at % and no more than 5 at % of at least one first element selected from the group consisting of Nd, W, and Sc, and no less than 0.005 at % and no more than 2 at % of at least one second element selected from the group consisting of C and B, the balance being Al and inevitable impurities.

Abstract: A mounting apparatus for stacking and mounting two or more semiconductor chips at a plurality of locations on a substrate includes: a first mounting head for forming, at a plurality of locations on the substrate, temporarily stacked bodies in which two or more semiconductor chips are stacked in a temporarily press-attached state; and a second mounting head for forming chip stacked bodies by sequentially finally press-attaching the temporarily stacked bodies formed at the plurality of locations. The second mounting head includes: a press-attaching tool for heating and pressing an upper surface of a target temporarily stacked body to thereby finally press-attach the two or more semiconductor chips configuring the temporarily stacked body altogether; and one or more heat-dissipation tools having a heat-dissipating body which, by coming into contact with an upper surface of another stacked body positioned around the target temporarily stacked body, dissipates heat from the another stacked body.

Abstract: An aluminum alloy having a composition including 0.1% by mass or more and 2.8% by mass or less of Fe; and 0.002% by mass or more and 2% by mass or less of Nd.

Abstract: An aluminum alloy material including 1.2 atom % or more and 6.5 atom % or less of Fe, and 0.005 atom % or more and less than 0.15 atom % of one or more elements selected from the group consisting of Nd, W, and Sc, with the balance being Al and unavoidable impurities.

Abstract: Provided is a mounting device in which two or more semiconductor chips are laminated and mounted at a plurality of locations on a substrate, said mounting device including: a stage that supports the substrate; a bonding part that laminates and mounts the plurality of semiconductor chips on the substrate while heating the plurality of semiconductor chips and the substrate; and a heat insulating member that is interposed between the stage and the substrate, said heat insulating member including a first layer which is in contact with the substrate and to which heat is applied from the bonding part via the semiconductor chips and the substrate, and a second layer which is disposed closer to the stage side than the first layer, wherein the first layer has a larger heat resistance than the second layer.

Abstract: Provided is a method for setting the conditions for heating a semiconductor chip during bonding of the semiconductor chip using an NCF, wherein a heating start temperature and a rate of temperature increase are set on the basis of a viscosity characteristic map that indicates changes in viscosity with respect to temperature of the NCF at various rates of temperature increase and a heating start temperature characteristic map that indicates changes in viscosity with respect to temperature of the NCF when the heating start temperature is changed at the same rate of temperature increase.

Abstract: A semiconductor mounting device for mounting chip components on a substrate, wherein the device is reduced in size. A semiconductor mounting device 10 comprises: a temporary placement stage 12 on which are loaded a plurality of chip components 30a, 30b, 30c; a conveyance head 14 that conveys the chip components 30a, 30b, 30c to the temporary placement stage 12, and also loads each of the chip components 30a, 30b, 30c on the temporary placement stage 12 so that the relative positions of the plurality of chip components 30a, 30b, 30c reach predetermined positions; a mounting stage 16 that secures a substrate 36 by suction; and a mounting head 18 that suctions the plurality of chip components 30a, 30b, 30c loaded on the temporary placement stage 12, and pressurizes while keeping the relative positions at prescribed positions on the substrate 36 that is secured by suction to the mounting stage 16.

Abstract: An aluminum alloy material has a composition containing 3% by mass or more and 10% by mass or less of Fe and the balance of Al and incidental impurities, and a structure including a matrix and a compound. The matrix is composed mainly of Al, the compound contains Al and Fe, and a relative density is 85% or more. In any cross section, the matrix has an average crystal grain size of 1,100 nm or less, and the compound has an average major-axis length of 100 nm or less.

Abstract: Provided is a mounting device in which two or more semiconductor chips are laminated and mounted at a plurality of locations on a substrate, said mounting device including: a stage that supports the substrate; a bonding part that laminates and mounts the plurality of semiconductor chips on the substrate while heating the plurality of semiconductor chips and the substrate; and a heat insulating member that is interposed between the stage and the substrate, said heat insulating member including a first layer which is in contact with the substrate and to which heat is applied from the bonding part via the semiconductor chips and the substrate, and a second layer which is disposed closer to the stage side than the first layer, wherein the first layer has a larger heat resistance than the second layer.

Abstract: A mounting apparatus for manufacturing a semiconductor device by bonding a semiconductor chip (12) to a mounted object that is a substrate (30) or another semiconductor chip (12) is provided. The mounting apparatus includes: a stage (120) on which the substrate (30) is placed, a mounting head (124) that is capable of moving relative to the stage (120) and bonds the semiconductor chip (12) to the mounted object, and an irradiation unit (108 that irradiates, from a lower side of the stage (120), an electromagnetic wave transmitting through the stage and heating the substrate (30). The stage (120) has a first layer (122) formed on an upper surface side, and the first layer (122) has a greater thermal resistance in a plane direction than the thermal resistance in a thickness direction.