Patents by Inventor Toru Masuda
Toru Masuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240107633Abstract: A heater element includes: a honeycomb structure including an outer peripheral wall and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face to form a flow path; a pair of electrode layers provided on the outer peripheral wall and the partition walls on the first end face and the second end face; and terminals capable of electrically connecting the electrode layers to a conducting wire. At least a part of each of the electrode layers has an extending portion extending outwardly from an outer edge of each of the first end face and the second end face. Each of the terminals is connected to the extending portion and disposed to face a side surface of the honeycomb structure.Type: ApplicationFiled: December 4, 2023Publication date: March 28, 2024Applicant: NGK INSULATORS, LTD.Inventors: Yukio MIYAIRI, Masaaki MASUDA, Takuya NAKASHIMA, Hirofumi YAMAGUCHI, Toru HAYASE, Koji KUZUTANI
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Publication number: 20240074495Abstract: A power supply unit for an aerosol generating device, includes a power supply, a heater connector connected to a heater configured to heat an aerosol source by consuming power supplied from the power supply, a case which constitutes a surface of the power supply unit, and a sensor which is disposed in the vicinity of the case and is configured to output a value related to a temperature of the case. Protection control for prohibiting one or both of charging of the power supply and discharging from the power supply to the heater is executed based on an output value of the sensor.Type: ApplicationFiled: November 5, 2023Publication date: March 7, 2024Applicant: Japan Tobacco Inc.Inventors: Manabu YAMADA, Tatsunari AOYAMA, Hiroshi KAWANAGO, Hiroki NAKAAE, Toru NAGAHAMA, Yuki NISHIMURA, Takashi FUJIKI, Yuki MASUDA, Ryo YOSHIDA
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Publication number: 20230282561Abstract: The provided power semiconductor module is configured to reduce the wiring inductance and save space on the substrate by establishing a multi-parallel connection between multiple power semiconductor chips. It consists of a first and second insulated substrates with a plurality of semiconductor switching elements positioned on one and facing the other. There are also first and second spacer conductors positioned between the plurality of semiconductor switching elements and the second insulated substrate. Inter-spacer-conductor wiring parts are connected with the plurality of second spacer conductors.Type: ApplicationFiled: April 19, 2021Publication date: September 7, 2023Applicant: Hitachi Power Semiconductor Device, Ltd.Inventors: Toru Masuda, Seiichi Hayakawa, Yuji Takayanagi
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Patent number: 11539361Abstract: To provide a semiconductor device signal transmission circuit for drive-control, a method of controlling a semiconductor device signal transmission circuit for drive-control, a semiconductor device, a power conversion device, and an electric system for a railway vehicle capable of preventing malfunction due to noise while speeding up or reducing loss of a switching operation. The semiconductor device signal transmission circuit for drive-control that is connected between a semiconductor device constituting an arm in a power conversion device and a drive circuit configured to drive the semiconductor device, including: an inductor; and an impedance circuit including a switch and connected in parallel with the inductor.Type: GrantFiled: February 10, 2021Date of Patent: December 27, 2022Assignee: Hitachi Power Semiconductor Device, Ltd.Inventors: Toru Masuda, Seiichi Hayakawa, Yuji Takayanagi, Takae Shimada, Takashi Wada
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Patent number: 11496041Abstract: The invention provides a gate drive device, a gate drive method, a power semiconductor module, and an electric power conversion device capable of reducing a negative gate surge voltage. The gate drive device drives a semiconductor device constituting an arm in an electric power conversion device. Before a turn-off start of a drive arm, in a counter arm, a voltage between one main terminal of the semiconductor device and a gate terminal of the semiconductor device is charged to a voltage value that is larger, in a positive direction, than a negative voltage of a negative gate power supply and smaller than a gate threshold voltage of the semiconductor device.Type: GrantFiled: January 28, 2021Date of Patent: November 8, 2022Assignee: Hitachi Power Semiconductor Device, Ltd.Inventors: Daisuke Ikarashi, Toru Masuda, Seiichi Hayakawa, Yuji Takayanagi, Masamitsu Inaba
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Publication number: 20220302075Abstract: There is provided a power semiconductor module with multiple semiconductor chips arranged in parallel on an insulated substrate, allowing for high density mounting of semiconductor chips and highly reliable with less difference in operating characteristics from one semiconductor chip to another. The above module includes an insulated substrate; a first conductive pattern laid out on the insulated substrate; multiple power semiconductor chips arranged on the first conductive pattern; a first wiring formed to bridge and directly connecting respective gate electrodes of the power semiconductor chips; and a second wiring formed to bridge and directly connecting respective source electrodes of the power semiconductor chips, wherein the first wiring is placed alongside of the second wiring and may be angled within 30 degrees with respect to the second wiring.Type: ApplicationFiled: April 6, 2020Publication date: September 22, 2022Applicant: Hitachi Power Semiconductor Device, Ltd.Inventors: Toru Masuda, Seiichi Hayakawa, Yuji Takayanagi
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Publication number: 20210296979Abstract: The invention provides a gate drive device, a gate drive method, a power semiconductor module, and an electric power conversion device capable of reducing a negative gate surge voltage. The gate drive device drives a semiconductor device constituting an arm in an electric power conversion device. Before a turn-off start of a drive arm, in a counter arm, a voltage between one main terminal of the semiconductor device and a gate terminal of the semiconductor device is charged to a voltage value that is larger, in a positive direction, than a negative voltage of a negative gate power supply and smaller than a gate threshold voltage of the semiconductor device.Type: ApplicationFiled: January 28, 2021Publication date: September 23, 2021Inventors: Daisuke IKARASHI, Toru MASUDA, Seiichi HAYAKAWA, Yuji TAKAYANAGI, Masamitsu INABA
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Publication number: 20210288640Abstract: To provide a semiconductor device signal transmission circuit for drive-control, a method of controlling a semiconductor device signal transmission circuit for drive-control, a semiconductor device, a power conversion device, and an electric system for a railway vehicle capable of preventing malfunction due to noise while speeding up or reducing loss of a switching operation. The semiconductor device signal transmission circuit for drive-control that is connected between a semiconductor device constituting an arm in a power conversion device and a drive circuit configured to drive the semiconductor device, including: an inductor; and an impedance circuit including a switch and connected in parallel with the inductor.Type: ApplicationFiled: February 10, 2021Publication date: September 16, 2021Inventors: Toru MASUDA, Seiichi HAYAKAWA, Yuji TAKAYANAGI, Takae SHIMADA, Takashi WADA
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Patent number: 10888941Abstract: When a distance between an end portion of a brazing material and a downward extended line of a side surface of an insulating substrate is taken as “a”, and a distance between an end portion of a solder resist on the side of a solder and the downward extended line of the side surface of the insulating substrate is taken as “b”, the positional relationship a<b is satisfied. The position of the end portion of the solder is regulated by the solder resist, and the position of the end portion of the brazing material on the side of the side surface of the insulating substrate is closer to the side of the side surface of the insulating substrate than to the position of the end portion of the solder on the side of the side surface of the insulating substrate.Type: GrantFiled: October 24, 2018Date of Patent: January 12, 2021Assignee: HITACHI POWER SEMICONDUCTOR DEVICE, LTD.Inventors: Daichi Kawamura, Toru Masuda, Junpei Kusukawa, Naoki Sakurai
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Patent number: 10488515Abstract: An acoustic emission wave detection system and an acoustic emission wave detector are provided. The acoustic emission wave detection system includes an acoustic emission wave detector, a photoelectric converter, and a determination processor. The acoustic emission wave detector includes a housing, an optical fiber that guides light from a wideband light source into the housing, and an FBG housed in the housing and having a diffractive grating that reflects light guided into the housing. The FBG is fixed on a side of the other end in the housing such that the light guided into the housing is received by one end thereof. An acoustic emission wave from a high-voltage apparatus is received by the other end thereof. Due to the insulation resistance of the FBG, the acoustic wave detector can be installed close to or in contact with the high-voltage apparatus without introducing discharges or noise from the high-voltage apparatus.Type: GrantFiled: November 25, 2014Date of Patent: November 26, 2019Assignee: Hitachi, Ltd.Inventors: Daichi Kawamura, Toru Masuda, Hiroshi Kageyama, Ayumu Hatanaka
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Publication number: 20190126374Abstract: When a distance between an end portion of a brazing material and a downward extended line of a side surface of an insulating substrate is taken as “a”, and a distance between an end portion of a solder resist on the side of a solder and the downward extended line of the side surface of the insulating substrate is taken as “b”, the positional relationship a<b is satisfied. The position of the end portion of the solder is regulated by the solder resist, and the position of the end portion of the brazing material on the side of the side surface of the insulating substrate is closer to the side of the side surface of the insulating substrate than to the position of the end portion of the solder on the side of the side surface of the insulating substrate.Type: ApplicationFiled: October 24, 2018Publication date: May 2, 2019Inventors: Daichi KAWAMURA, Toru MASUDA, Junpei KUSUKAWA, Naoki SAKURAI
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Patent number: 10115700Abstract: The object of the present invention is to compensate for a difference in threshold voltage between a plurality of switching devices incorporated in a power module. The present invention solves the subject described above by mounting a switching device having a high threshold voltage in comparison with a different switching device at a location at which the temperature of the power module during operation is higher than that at another location at which the different switching device is mounted. Eventually, a power conversion apparatus of a high performance and a vehicle drive apparatus of a high performance can be provided.Type: GrantFiled: March 13, 2015Date of Patent: October 30, 2018Assignee: Hitachi, Ltd.Inventors: Ryuusei Fujita, Satoru Akiyama, Hiroshi Kageyama, Toru Masuda, Ayumu Hatanaka, Akio Shima
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Patent number: 10002858Abstract: A first conductive pattern includes: a first feeding point for supplying a potential to the first conductive pattern located at one end thereof; one or more diode elements located over the first conductive pattern; and a plurality of switching elements over the first conductive pattern on the opposite side to the first feeding point with the diode elements in between. A second conductive pattern includes a second feeding point that is provided in proximity to the first feeding point and supplies a potential different from that for the first conductive pattern to the second conductive pattern. The plurality of the switching elements is electrically connected with the second conductive pattern through a plurality of bonding wires. The second conductive pattern is provided with a slit pattern that defines an area of connection of the plurality of the bonding wires with the second conductive pattern over the second conductive pattern.Type: GrantFiled: July 15, 2014Date of Patent: June 19, 2018Assignee: Hitachi, Ltd.Inventors: Toru Masuda, Akitoyo Konno
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Publication number: 20180026009Abstract: The object of the present invention is to compensate for a difference in threshold voltage between a plurality of switching devices incorporated in a power module. The present invention solves the subject described above by mounting a switching device having a high threshold voltage in comparison with a different switching device at a location at which the temperature of the power module during operation is higher than that at another location at which the different switching device is mounted. Eventually, a power conversion apparatus of a high performance and a vehicle drive apparatus of a high performance can be provided.Type: ApplicationFiled: March 13, 2015Publication date: January 25, 2018Inventors: Ryuusei FUJITA, Satoru AKIYAMA, Hiroshi KAGEYAMA, Toru MASUDA, Ayumu HATANAKA, Akio SHIMA
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Publication number: 20170329006Abstract: An acoustic emission wave detector includes a housing, an optical fiber that guides light from a wideband light source into the housing, and an FBG housed in the housing and having a diffractive grating that reflects light guided into the housing. The FBG is fixed on a side of the other end in the housing such that the light guided into the housing is received by one end thereof. An acoustic emission wave from a high-voltage apparatus is received by the other end thereof.Type: ApplicationFiled: November 25, 2014Publication date: November 16, 2017Inventors: Daichi KAWAMURA, Toru MASUDA, Hiroshi KAGEYAMA, Ayumu HATANAKA
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Publication number: 20170170157Abstract: A first conductive pattern includes: a first feeding point for supplying a potential to the first conductive pattern located at one end thereof; one or more diode elements located over the first conductive pattern; and a plurality of switching elements over the first conductive pattern on the opposite side to the first feeding point with the diode elements in between. A second conductive pattern includes a second feeding point that is provided in proximity to the first feeding point and supplies a potential different from that for the first conductive pattern to the second conductive pattern. The plurality of the switching elements is electrically connected with the second conductive pattern through a plurality of bonding wires. The second conductive pattern is provided with a slit pattern that defines an area of connection of the plurality of the bonding wires with the second conductive pattern over the second conductive pattern.Type: ApplicationFiled: July 15, 2014Publication date: June 15, 2017Inventors: Toru MASUDA, Akitoyo KONNO
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Patent number: 8502614Abstract: There are provided a variable inductor with little degradation in quality factor, and an oscillator and a communication system using the variable inductor. An inductance controller comprising a reactance device with a variable device value, such as, for example, a variable capacitor, is connected to a secondary inductor, magnetically coupled to a primary inductor through mutual inductance. The inductance controller is provided with an inductance control terminal for receiving a control signal for controlling capacitance of the variable capacitor. Inductance of the primary inductor is varied by varying the capacitance by the control signal.Type: GrantFiled: January 11, 2011Date of Patent: August 6, 2013Assignee: Renesas Electronics CorporationInventors: Takahiro Nakamura, Toru Masuda
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Patent number: 8212615Abstract: There is disclosed a variable-gain amplifier circuit that operates on a low voltage, exhibits low distortion, provides a wide range of variation, and is suitable for use in a low-power-consumption wireless communication system. The variable-gain amplifier circuit is configured so that a variable-load circuit, which includes three reactance function elements and provides a wide range of impedance variation, is connected to a conductor circuit whose output terminal generates a positive-phase output current proportional to conductance with respect to an input voltage.Type: GrantFiled: April 22, 2010Date of Patent: July 3, 2012Assignee: Hitachi, Ltd.Inventors: Toru Masuda, Nobuhiro Shiramizu, Takahiro Nakamura, Katsuyoshi Washio
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Patent number: 8121579Abstract: The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.Type: GrantFiled: February 12, 2009Date of Patent: February 21, 2012Assignee: Hitachi, Ltd.Inventors: Nobuhiro Shiramizu, Toru Masuda, Takahiro Nakamura, Katsuyoshi Washio, Masamichi Tanabe
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Publication number: 20110105053Abstract: There are provided a variable inductor with little degradation in quality factor, and an oscillator and a communication system using the variable inductor. An inductance controller comprising a reactance device with a variable device value, such as, for example, a variable capacitor, is connected to a secondary inductor, magnetically coupled to a primary inductor through mutual inductance. The inductance controller is provided with an inductance control terminal for receiving a control signal for controlling capacitance of the variable capacitor. Inductance of the primary inductor is varied by varying the capacitance by the control signal.Type: ApplicationFiled: January 11, 2011Publication date: May 5, 2011Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Takahiro NAKAMURA, Toru MASUDA