Abstract: In accordance with an embodiment, a measurement apparatus includes a library creation unit, a spectral profile acquiring unit, and a measurement unit. The library creation unit creates a library in which a layer stack model is matched to a theoretical profile regarding a pattern of stacked layers. The spectral profile acquiring unit acquires an actual measured profile by applying light to a measurement target pattern obtained when the pattern is actually created. The measurement unit measures the sectional shape of the measurement target pattern by performing fitting of the theoretical profile to the actual measured profile. The layer stack model is created by calculating a feature value that reflects the intensity of reflected light from an interface for each of the layers, determining a priority order of analysis from the feature value, and sequentially performing fitting of the theoretical profile to the measured profile in the determined priority order.

Abstract: In accordance with an embodiment, a measurement apparatus includes a library creation unit, a spectral profile acquiring unit, and a measurement unit. The library creation unit creates a library in which a layer stack model is matched to a theoretical profile regarding a pattern of stacked layers. The spectral profile acquiring unit acquires an actual measured profile by applying light to a measurement target pattern obtained when the pattern is actually created. The measurement unit measures the sectional shape of the measurement target pattern by performing fitting of the theoretical profile to the actual measured profile. The layer stack model is created by calculating a feature value that reflects the intensity of reflected light from an interface for each of the layers, determining a priority order of analysis from the feature value, and sequentially performing fitting of the theoretical profile to the measured profile in the determined priority order.

Abstract: In accordance with an embodiment, a film thickness monitoring method includes applying light to a laminated body, detecting reflected light from the laminated body and outputting signals corresponding to the detected light, and judging whether a film thickness of an opaque film which is a polishing target has reached a desired film thickness. The laminated body includes a transparent film and the opaque film on the transparent film. A comparison value between the signal before polishing the opaque film and the signal after starting the polishing is obtained at predetermined time intervals, and whether the film thickness of the opaque film has reached the desired film thickness is judged based on a relationship between the comparison value of the signals and a predetermined threshold value.

Abstract: In accordance with an embodiment, a film thickness monitoring method includes applying light to a substrate, which is a processing target, in a semiconductor manufacturing process involving rotation of the substrate, detecting reflected light from the substrate, and calculating a thickness of a film on the substrate. The thickness of the film is calculated from intensity of the reflected light detected in an identified time zone in which incident light passes a desired region on the substrate during the semiconductor manufacturing process.

Abstract: Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the evaluation object and the environment are prepared. Reflectance wavelength dispersions to the virtual component ratios are calculated. Similar reflectance wavelength dispersions having a small difference with the measured wavelength dispersion are extracted from the reflectance wavelength dispersions. Weighted average to the virtual component ratios used for calculating the similar reflectance wavelength dispersions are calculated to obtain a component ratio of the substance forming the evaluation object and the environment so that weighting is larger when the difference is smaller. A structure of the evaluation object is determined from the calculated component ratio.

Abstract: A method monitors a thickness of a subject film deposited on an underlying structure, the underlying structure contains at least one thin film formed on a substrate. The method includes determining thickness data of the underlying structure and storing the thickness data of the underlying structure in a thickness memory; measuring profile of optical spectrum of the subject film on the underlying structure; reading the thickness data of the underlying structure from the thickness memory; calculating theoretical profiles of the optical spectrum of the subject film based upon corresponding candidate film thicknesses of the subject film and the thickness data of the underlying structure; and searching a theoretical profile of the subject film, which is closest to the measured profile of optical spectrum of the subject film so as to determine a thickness of the subject film.

Abstract: Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the evaluation object and the environment are prepared. Reflectance wavelength dispersions to the virtual component ratios are calculated. Similar reflectance wavelength dispersions having a small difference with the measured wavelength dispersion are extracted from the reflectance wavelength dispersions. Weighted average to the virtual component ratios used for calculating the similar reflectance wavelength dispersions are calculated to obtain a component ratio of the substance forming the evaluation object and the environment so that weighting is larger when the difference is smaller. A structure of the evaluation object is determined from the calculated component ratio.

Abstract: Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the evaluation object and the environment are prepared. Reflectance wavelength dispersions to the virtual component ratios are calculated. Similar reflectance wavelength dispersions having a small difference with the measured wavelength dispersion are extracted from the reflectance wavelength dispersions. Weighted average to the virtual component ratios used for calculating the similar reflectance wavelength dispersions are calculated to obtain a component ratio of the substance forming the evaluation object and the environment so that weighting is larger when the difference is smaller. A structure of the evaluation object is determined from the calculated component ratio.

Abstract: A method monitors a thickness of a subject film deposited on an underlying structure, the underlying structure contains at least one thin film formed on a substrate. The method includes determining thickness data of the underlying structure and storing the thickness data of the underlying structure in a thickness memory; measuring profile of optical spectrum of the subject film on the underlying structure; reading the thickness data of the underlying structure from the thickness memory; calculating theoretical profiles of the optical spectrum of the subject film based upon corresponding candidate film thicknesses of the subject film and the thickness data of the underlying structure; and searching a theoretical profile of the subject film, which is closest to the measured profile of optical spectrum of the subject film so as to determine a thickness of the subject film.

Abstract: A method monitors a thickness of a subject film deposited on an underlying structure, the underlying structure contains at least one thin film formed on a substrate. The method includes determining thickness data of the underlying structure and storing the thickness data of the underlying structure in a thickness memory; measuring profile of optical spectrum of the subject film on the underlying structure; reading the thickness data of the underlying from the thickness memory; calculating theoretical profiles of the optimal spectrum of the subject film based upon corresponding candidate film thicknesses of the subject film and the thickness data of the underlying structure; and searching a theoretical profile of the subject film, which is closest to the measured profile of optical spectrum of the subject film so as to determine a thickness of the subject film.

Abstract: A dimension measurement method includes irradiating a measurement mark on a sample on which a pattern to be measured is formed with light from a measurement direction, detecting reflected diffracted light from the measurement mark to measure intensity thereof, and calculating a shape parameter of the pattern on the basis of the measured intensity, the measurement mark having measurement patterns which have the same shape as at least part of the pattern and are arranged in rows and columns, the columns being composed of the measurement patterns disposed with a predeter period in the direction perpendicular to the measurement direction, wherein a relation between a wavelength of the light and the period is adjusted so that the measurement mark generates the reflected diffracted light substantially the same as reflected diffracted light which would be generated when the column is assumed to be a continuous line pattern.

Abstract: An optical disk device in which data is written to or reproduced from an optical disk having an area which contains a header section and another area which does not contain a header section. When a track deviation of an optical pickup occurs, it is detected whether or not a signal representing the header section is contained in the return light signal from the optical disk. When a signal representing the header section is contained in the return light signal, it is determined that the optical pickup is located in an area which contains a header section and tracking is controlled through a push-pull method etc. On the other hand, when a signal representing the header section is not contained in the return light signal from the optical pickup, it is determined that the optical pickup is located in an area which does not contain a header section and tracking is controlled through differential phase detection etc.

Abstract: Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the evaluation object and the environment are prepared. Reflectance wavelength dispersions to the virtual component ratios are calculated. Similar reflectance wavelength dispersions having a small difference with the measured wavelength dispersion are extracted from the reflectance wavelength dispersions. Weighted average to the virtual component ratios used for calculating the similar reflectance wavelength dispersions are calculated to obtain a component ratio of the substance forming the evaluation object and the environment so that weighting is larger when the difference is smaller. A structure of the evaluation object is determined from the calculated component ratio.

Abstract: A dimension measurement method includes: irradiating a measurement mark with light, the measurement mark being formed on a sample on which a pattern to be measured is formed, the measurement mark comprising measurement patterns of the same shape as at least part of the pattern to be measured, the measurement patterns being arranged in a matrix constituted of measurement pattern columns which are repetitively disposed with a predetermined space in the direction of an arbitrary measurement direction which would provide a measurement target dimension of the pattern to be measured, the measurement pattern column being composed of the measurement patterns disposed with a predetermined period in the direction perpendicular to the measurement direction, and the light being fallen from the measurement direction; detecting reflected diffracted light from the measurement mark to measure intensity thereof; calculating a theoretical value of the intensity of the reflected diffracted light from a plurality of candidate va

Abstract: A method monitors a thickness of a subject film deposited on an underlying structure, the underlying structure contains at least one thin film formed on a substrate. The method includes determining thickness data of the underlying structure and storing the thickness data of the underlying structure in a thickness memory; measuring profile of optical spectrum of the subject film on the underlying structure; reading the thickness data of the underlying from the thickness memory; calculating theoretical profiles of the optimal spectrum of the subject film based upon corresponding candidate film thicknesses of the subject film and the thickness data of the underlying structure; and searching a theoretical profile of the subject film, which is closest to the measured profile of optical spectrum of the subject film so as to determine a thickness of the subject film.

Abstract: A film thickness measuring method comprises projecting white light onto a wafer with a film to be measured and sensing a first reflected light intensity from the wafer, determining the first reflected light intensity in the form of a first light intensity profile with wavelength as the abscissa axis and light intensity as the ordinate axis, projecting the white light onto a reference sample having the same structure as that of the underlying layer below the film and sensing a second reflected light intensity from the sample, determining the second reflected light intensity in the form of a second light intensity profile similarly to the first light intensity profile, calculating a normalized light intensity profile by dividing the first light intensity profile by the second light intensity profile, and calculating the film thickness of the film to be measured from the normalized light intensity profile.

Abstract: A mark position detecting system includes a light source for illuminating light on a mark for alignment measurement formed on a semiconductor substrate, a light detecting optical system and a measured light intensity profile preparing part, a theoretical light intensity profile preparing part, a light intensity profile comparison part. The measured light intensity profile preparation part prepares a measured light intensity profile denoting light intensity of reflected light from the mark from a detection result by the detecting optical system. The theoretical light intensity profile preparing part prepares a theoretical light intensity profile of the reflected light from a region of the mark where the intensity would change, using information on the shape and material of the mark. The light intensity profile comparison part compares the theoretical light intensity profile with the measured light intensity profile to detect the mark and misalignment.

Abstract: An optical disk device in which data is written to or reproduced from an optical disk having an area which contains a header section and another area which does not contain a header section. When a track deviation of an optical pickup occurs, it is detected whether or not a signal representing the header section is contained in the return light signal from the optical disk. When a signal representing the header section is contained in the return light signal, it is determined that the optical pickup is located in an area which contains a header section and tracking is controlled through a push-pull method etc. On the other hand, when a signal representing the header section is not contained in the return light signal from the optical pickup, it is determined that the optical pickup is located in an area which does not contain a header section and tracking is controlled through differential phase detection etc.

Abstract: A film thickness measuring method comprises projecting white light onto a wafer with a film to be measured and sensing a first reflected light intensity from the wafer, determining the first reflected light intensity in the form of a first light intensity profile with wavelength as the abscissa axis and light intensity as the ordinate axis, projecting the white light onto a reference sample having the same structure as that of the underlying layer below the film and sensing a second reflected light intensity from the sample, determining the second reflected light intensity in the form of a second light intensity profile similarly to the first light intensity profile, calculating a normalized light intensity profile by dividing the first light intensity profile by the second light intensity profile, and calculating the film thickness of the film to be measured from the normalized light intensity profile.

Abstract: A mark position detecting system comprises a light source for illuminating light L1 on a mark for alignment measurement formed on a semiconductor substrate, a light detecting optical system for detecting reflected light from the mark and a computer including a measured waveform preparing part, theoretical waveform preparing part, waveform comparison part and misalignment operation part. The measured waveform preparation part prepares and output a measured waveform denoting reflected light strength distribution dependent on a cross sectional shape of the mark on a basis of a detection result by the detecting optical system.