Abstract: A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm.

Abstract: A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic attracting force. A processing gas is introduced into an environment in which said sample is placed, and the environment is evacuated to a pressure condition for processing said sample. The processing gas is then formed into a plasma under the pressure condition, the sample is processed by the plasma, and a pulse bias voltage having a pulse cycle of 0.1 ?m to 10 ?m is applied to the sample.

Abstract: A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover s disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm.

Abstract: A measuring apparatus includes an irradiator which irradiates measuring light from a back of a substrate as the measuring light is totally reflectable from both first and second surfaces formed on the surface sides of the substrate, and a measurement unit which causes reflected lights of the measuring light irradiated by the irradiator means and reflected from the first and second surfaces to interfere with each other to thereby measure a distance between the first and second surfaces.

Abstract: A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm.

Abstract: A dry processing apparatus includes a processing chamber provided with a measurement window having a reflection portion which totally reflects light on the side of an inner surface thereof and a transmission portion. When a layer is not deposited, measurement light is irradiated so that the light is totally reflected by the reflection portion. A deviation between the measurement light reflected by a surface of the deposited layer and the measurement light reflected by the reflection portion is measured to determine a thickness of the deposited layer. A quantity of light reflected by the surface of the deposited layer is compared with the light quantity in case where irregularities are not formed in the surface of the deposited layer to evaluate a state of irregularities of the surface. The thickness of the deposited layer and a state of the surface of the layer are monitored separately.

Abstract: A plasma processing method which supplies plasma processing gas into a plasma process chamber, sets the pressure inside the plasma process chamber to the preset value, and generates plasma by capacitatively coupled discharge, emission of electromagnetic wave by radio frequency displacement current and formation of magnetic field, thereby processing a substrate. The plasma processing controls the radiated electromagnetic wave power by the radio frequency displacement current control means forming a resonant circuit, and processing a substrate while plasma distribution is controlled during plasma processing.

Abstract: A measuring apparatus includes an irradiator which irradiates measuring light from a back of a substrate as the measuring light is totally reflectable from both first and second surfaces formed on the surface sides of the substrate, and a measurement unit which causes reflected lights of the measuring light irradiated by the irradiator means and reflected from the first and second surfaces to interfere with each other to thereby measure a distance between the first and second surfaces.

Abstract: A film formation monitor of a plasma CVD apparatus includes a light source for generating measuring light. Measuring light generated from the light source is guided to an optical system having lenses and mirrors, and is irradiated to a silicon substrate at a plurality of angles of incidence with the back of the silicon substrate being substantially a focus. Reflected light from the substrate is incident into a spectroscope. An intensity of measuring light is detected for each wavelength. A calculation apparatus calculates an etching depth. Reflected light from the back of the substrate interferes with reflected light from an etchd surface. To reduce influences of reflected light from the back of the substrate, measuring light is irradiated while its angle of incidence is varied.

Abstract: A plasma processing apparatus for plasma processing of a substrate, having a plasma processing chamber, a supplier of a plasma processing gas, an evacuator of the plasma processing chamber, a plasma generator, and a processor which processes a substrate to be processed by exposing the substrate to the plasma which is generated. The plasma generator includes a first conductive component having a first high-frequency electric power supplied thereto, at least one second conductive component having a second high-frequency electric power supplied thereto, an insulator which insulates the first conductive component with respect to the second conductive component, and a generator which generates a high-frequency electric field between the first conductive component and the second conductive component so as to enable generation of a high-frequency electric field between the first conductive component and the second conductive component.

Abstract: A film formation monitor of a plasma CVD apparatus includes a light source for generating measuring light. Measuring light generated from the light source is guided to an optical system having lenses and mirrors, and is irradiated to a silicon substrate at a plurality of angles of incidence with the back of the silicon substrate being substantially a focus. Reflected light from the substrate is incident into a spectroscope. An intensity of measuring light is detected for each wavelength. A calculation apparatus calculates an etching depth. Reflected light from the back of the substrate interferes with reflected light from an etchd surface. To reduce influences of reflected light from the back of the substrate, measuring light is irradiated while its angle of incidence is varied.

Abstract: A plasma processing apparatus has plasma generating means including a means for generating capacitive coupled discharge and a means for radiating electromagnetic waves, so that the energy state of electrons is independently controlled by a combination of a plasma due to capacitive coupled discharge and a plasma due to radiation of electromagnetic waves of a high-frequency, to thereby control the occurrence of radical species, and thereby establishing a compatibility, for example, between high selective etching and high accuracy and high speed in etching or between film quality and film formation rate. Since the density distribution of the plasma can be controlled without any change in hardware configuration by adjusting distributions of the power for capacitive coupled discharge and the power for radiation of electromagnetic waves, the entire surface of a large-sized substrate can be etched at a high accuracy into a fine pattern.

Abstract: A plasma processing apparatus and a plasma processing method are provided. The plasma processing apparatus and a plasma processing method are capable of easily performing precise working of a fine pattern to a large sized sample having a diameter of 300 mm or larger, and also capable of improving a selectivity during micro processing.

Abstract: A dry processing apparatus includes a processing chamber provided with a measurement window having a reflection portion which totally reflects light on the side of an inner surface thereof and a transmission portion. When a layer is not deposited, measurement light is irradiated so that the light is totally reflected by the reflection portion. A deviation between the measurement light reflected by a surface of the deposited layer and the measurement light reflected by the reflection portion is measured to determine a thickness of the deposited layer. A quantity of light reflected by the surface of the deposited layer is compared with the light quantity in case where irregularities are not formed in the surface of the deposited layer to evaluate a state of irregularities of the surface. The thickness of the deposited layer and a state of the surface of the layer are monitored separately.

Abstract: The present invention controls the state electronic energy and generation of radical species by controlling the electron energy state using electromagnetic wave radiated into plasma and magnetic field, and by controlling each state of capacitatively coupled discharge, inductively coupled discharge and electronic cyclotron resonant discharge. The present invention further controls radiated electromagnetic wave power distribution through displacement current control, and controls uniformity in plasma processing through plasma distribution control. Still further, it controls the density distribution of radio frequency current flowing through the substrate, thereby preventing changes in characteristics of semiconductor devices.

Abstract: A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e.

Abstract: A plasma processing apparatus comprising a vacuum processing chamber, a plasma generating means including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and a evacuating means for evacuating the vacuum processing chamber, which further comprises a high frequency electric power source for applying an electric power of a VHF band from 50 MHz to 200 MHz between the pair of electrodes; and a magnetic field forming means for forming a static magnetic field or a low frequency magnetic field larger than 10 gausses and smaller than 110 gausses in a direction intersecting an electric field generated between the pair of electrodes and the vicinity by the high frequency electric power source; therein the magnetic field forming means being set so that a portion where a component of the magnetic field in a direction along the surface of the sample table becomes maximum is brought to a position in the opposite side o

Abstract: In a plasma processing method and apparatus, microwaves are radiated from a slot antenna set at the bottom of a resonator, a plasma is generated using the microwave and a sample is processed by the plasma. A plasma having a ring-form is generated by the microwaves radiated from the slot antennas, which are disposed at an angle which is neither in parallel to nor perpendicular to a surface current flowing on a slot antenna plate. Thereby, the sample is uniformly processed.

Abstract: A plasma processing apparatus and method are provided which are capable of easily performing precise working of a fine pattern on a large sized sample having a diameter of 300 mm or larger, and also capable of improving selectivity during micro processing. The apparatus includes a vacuum processing chamber, a plasma generating arrangement including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and an evacuating means for evacuating the vacuum processing chamber. The apparatus further includes a high frequency electric power source for applying an electric power of VHF band from 50 MHz to 200 MHz between the pair of electrodes.

Abstract: A plasma processing apparatus includes a plasma processing chamber having a stage for placing a substrate to be plasma processed, an exhaust port and a gas introduction nozzle for plasma processing coupled therewith, and a cavity resonator for closing the plasma processing chamber in vacuum manner and coupled through a microwave introducing window through which microwaves are introduced and having slots for radiating microwaves to the plasma processing chamber. Microwaves having increased intensity of an electromagnetic field is supplied to the processing chamber to produce plasma to effect processing of the substrate. An area in which diffusion of plasma is suppressed to reduce loss is formed only in the vicinity of an inner wall of the processing chamber.