Patents by Inventor Toru Sugihara

Toru Sugihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090306383
    Abstract: The present invention provides a method for producing 2-(4-methyl-2-phenylpiperazin-1-yl)pyridine-3-methanol, and this method includes the step of catalytically reducing 2-(4-methyl-2-phenylpiperazin-1-yl)-3-cyanopyridine in the presence of a partially deactivated palladium catalyst in an aqueous acid solution.
    Type: Application
    Filed: November 13, 2006
    Publication date: December 10, 2009
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Toru Sugihara, Chiharu Maeda
  • Patent number: 5788493
    Abstract: The invention relates to denture-supporting permanent magnet assemblies each using a magnetic attractive force, and provides denture-supporting permanent magnet assemblies, denture-supporting keepers, and denture-supporting magnetic attachments each of which uses a magnetic material with a high saturation magnetic flux density, i.e., a magnetic material comprising 15.5-18.5 wt % Cr and balance Fe as magnetic materials used for the permanent magnet assembly and the keeper in order to provide a magnetic attachment which keeps an excellent attractive force even if miniaturized.
    Type: Grant
    Filed: March 13, 1996
    Date of Patent: August 4, 1998
    Assignee: Hitachi Metals, Ltd.
    Inventors: Kiyomi Tanaka, Toru Sugihara, Kazumi Noguchi, Hiroya Suzuki, Osamu Okuno
  • Patent number: 4938798
    Abstract: A high melting metal silicide sputtering target which comprises a fine texture whose stoichiometric composition grains of MSi.sub.2, where M represents a high melting metal, have a maximum grain size of 20 .mu.m, whose free silicon grains have a maximum grain size of 50 .mu.m and whose oxygen content is not more than 200 ppm and has a density ratio to the theoretical density of 99% or more has good film characteristics including the reduction in the number of grains formed on the sputtered film and is useful as an electrode material or a wiring material in semi-conductor devices.
    Type: Grant
    Filed: March 7, 1988
    Date of Patent: July 3, 1990
    Assignee: Hitachi Metals, Ltd.
    Inventors: Yoshitaka Chiba, Noriyoshi Hirao, Toru Sugihara, Kenji Hasegawa