Abstract: In separating water and fat with applying the Dixon method, peak intensities of fat with multiple peaks are individually calculated with a high degree of accuracy while reducing the number of variables to be estimated. Multiple images made up of signals acquired at different echo times (TEs) are used to solve a predetermined signal equation (signal model) expressing the relation between the pixel values (signal values) of the images and imaging parameters such as signal intensities of components and TE, thereby performing separation of signals for each component. For separating the signals, at least one of the variables (other than the signal intensity) included in the signal equation is subjected to a process (first estimation process) for refining a value roughly obtained, and then using thus refined value of the variable to estimate (second estimation process) other variables (including the signal intensity), the signals are separated.

Abstract: For a complex image to be complexly added, appropriate phase correction is executed by a simple method to prevent occurrence of an artifact in a signal region and to reduce noise in a background region. Two or more types of smoothing processing with different smoothing degrees are executed on a phase image of the complex image to obtain two or more types of smoothed phase images having different smoothing degrees. A weight for each of these smoothed phase images is calculated based on a signal value (SNR) of an intensity image, and addition is performed by a weight for each signal value to obtain a smoothed phase image for correction. After a phase of the complex image is corrected using the smoothed phase image, a phase-corrected complex image is complexly added. As a result, phase correction equivalent to phase correction in which a smoothing degree is weakened in the signal region and a smoothing degree is strengthened in the background region is realized.

Abstract: An integrated device includes an optical element and an electrical element that are implemented on a substrate. The optical element and the electrical element are bonded by surface-activated bonding technology to a bonding portion that is formed on the substrate and made of metal material.

Abstract: On a mounting substrate 101, an LD element 102 and a wavelength converter element 103 are mounted as optical elements. An end of an optical fiber 105 is fixed, at a given length, in a fiber anchoring groove 301 of a sub-substrate 104. The sub-substrate 104 is mounted to the mounting substrate 101 with the surface supporting the optical fiber 105 opposing thereto, and the wavelength converter element 103 and the optical fiber 105 being coupled. By mounting of the sub-substrate 104 to the mounting substrate 101, the coupling position of the output end of the wavelength converter element 103 and the input end of the optical fiber 105 is provided an internal position that is a given distance from the end of mounting substrate 101.

Abstract: In a light source device for combining light waves with at least three wavelengths and outputting thus combined light waves, an optical system element and an electrical system element are formed on a semiconductor substrate, thereby eliminating the necessity of optical members such as an optical connector, and saving space to place the optical members as well as reducing arrangement spacing. In addition, the space necessary for wiring in an electrical circuit is reduced. Therefore, an integration degree of each of the elements, the optical system element and the electrical system element, is enhanced. The optical system element and the electrical system element are formed in layers on the same conductor substrate, thereby reducing the area that is required in configuring a parallel establishment of the optical system element and the electrical system element.

Abstract: An optical device (20) are formed by bonding a optical element (6) having an optical waveguide (8) with a substrate (2). On a surface of the optical element (6) facing the substrate (2) formed are the optical waveguide (8) and a thin film heater (4) that heats the optical waveguide (8). The optical element (6) and the substrate (2) are bonded through a first bonding part (12) and a second bonding part (14) made of metal material. The thin film heater (4) is electrically connected with a wire on the substrate (2) through the first bonding part (12) and the second bonding part (14). In this way, additional wires for electrical connection can be omitted, the optical element 6 can be miniaturized removing a superfluous region, and the manufacturing process can be simplified.

Abstract: In an optical device 1 in which a wavelength converting element 20 is disposed as an optical element on a silicon substrate 10, configuration includes heaters 40a and 40b formed on the silicon substrate 10; and micro bumps 30a, 30b that are made of Au, that bond the silicon substrate 10 and the wavelength converting element 20, and that transfer the heat generated by the heaters 40a, 40b to the wavelength converting element 20.

Abstract: On a mounting substrate 101, an LD element 102 and a wavelength converter element 103 are mounted as optical elements. An end of an optical fiber 105 is fixed, at a given length, in a fiber anchoring groove 301 of a sub-substrate 104. The sub-substrate 104 is mounted to the mounting substrate 101 with the surface supporting the optical fiber 105 opposing thereto, and the wavelength converter element 103 and the optical fiber 105 being coupled. By mounting of the sub-substrate 104 to the mounting substrate 101, the coupling position of the output end of the wavelength converter element 103 and the input end of the optical fiber 105 is provided an internal position that is a given distance from the end of mounting substrate 101.

Abstract: An optical device (20) are formed by bonding a optical element (6) having an optical waveguide (8) with a substrate (2). On a surface of the optical element (6) facing the substrate (2) formed are the optical waveguide (8) and a thin film heater (4) that heats the optical waveguide (8). The optical element (6) and the substrate (2) are bonded through a first bonding part (12) and a second bonding part (14) made of metal material. The thin film heater (4) is electrically connected with a wire on the substrate (2) through the first bonding part (12) and the second bonding part (14). In this way, additional wires for electrical connection can be omitted, the optical element 6 can be miniaturized removing a superfluous region, and the manufacturing process can be simplified.

Abstract: In a light source device for combining light waves with at least three wavelengths and outputting thus combined light waves, an optical system element and an electrical system element are formed on a semiconductor substrate, thereby eliminating the necessity of optical members such as an optical connector, and saving space to place the optical members as well as reducing arrangement spacing. In addition, the space necessary for wiring in an electrical circuit is reduced. Therefore, an integration degree of each of the elements, the optical system element and the electrical system element, is enhanced. The optical system element and the electrical system element are formed in layers on the same conductor substrate, thereby reducing the area that is required in configuring a parallel establishment of the optical system element and the electrical system element.

Abstract: In an optical device 1 in which a wavelength converting element 20 is disposed as an optical element on a silicon substrate 10, configuration includes heaters 40a and 40b formed on the silicon substrate 10; and micro bumps 30a, 30b that are made of Au, that bond the silicon substrate 10 and the wavelength converting element 20, and that transfer the heat generated by the heaters 40a, 40b to the wavelength converting element 20.

Abstract: An integrated device includes an optical element and an electrical element that are implemented on a substrate. The optical element and the electrical element are bonded by surface-activated bonding technology to a bonding portion that is formed on the substrate and made of metal material.

Abstract: A weight part (12) is supported by a beam part (26) in a slim piece shape supported by a frame-shaped support part (10), and the beam part (26) is provided with a piezoresistance element (20) as a transducing element that transduces a mechanical variation to an electrical variation, so that a mechanical variation of the weight part (12) is transmitted to the piezoresistance element (20) via the beam part (26). Then, the beam part (26) is constructed by stacking the silicon nitride film (16) and a resin film (18) such as a polyimide film.

Abstract: A weight part (12) is supported by a beam part (26) in a slim piece shape supported by a frame-shaped support part (10), and the beam part (26) is provided with a piezoresistance element (20) as a transducing element that transduces a mechanical variation to an electrical variation, so that a mechanical variation of the weight part (12) is transmitted to the piezoresistance element (20) via the beam part (26). Then, the beam part (26) is constructed by stacking the silicon nitride film (16) and a resin film (18) such as a polyimide film.

Abstract: A current when static electricity intrudes is passed by a first circuit portion composed of a series circuit including a fuse element and a resistor until a program voltage is applied to a program voltage terminal, and the fuse element is fused when the program voltage is applied. A current for breaking the fuse element is passed when an N-type MOS transistor turns into a second breakdown state by a gate voltage from a second circuit portion.

Abstract: In a bidirectional surge protection device formed on a semiconductor substrate, buried layers, which have the same conduction type as and are higher in impurity concentration than the semiconductor substrate, are formed on the entire surfaces of the device regions provided on both surfaces of the semiconductor substrate or formed under emitter-push restraining layers alone, wherein injection of minority carriers from a surface opposite to the surface on which the device operates is restrained to lower a holding current. As a result, the bidirectional surge protection device easily becomes OFF once it becomes ON.

Abstract: A dry etching method utilizing electron cyclotron resonance excited by microwaves is divided into at least a first etching step for etching a region which extends to the vicinity of a boundary between the non-etching layer and the etching layer but does not reach the non-etching layer and a second etching step conducted after the first etching step.At least one among the four control factors of output power of the magnetron, electron cyclotron resonance point, etching pressure and magnetic field intensity distribution or a combination of five control factors including the foregoing four plus a high-frequency bias power applied to the rear surface of the object to be etched is changed as desired between the first etching step and the second etching step.