Abstract: A power supply device includes a power generation element that converts external energy into electrical energy and outputs the electrical energy as a voltage (VEH), a secondary battery that is connected in series with the power generation element and outputs a voltage (VBAT), and a power conversion unit that receives the voltage (VEH) and the voltage (VBAT) and outputs power (POUT) to a load circuit. The power conversion unit includes a voltage conversion unit connected in series with the power generation element and the secondary battery, a power storage unit connected to the voltage conversion unit, an output terminal for connecting the power storage unit to the load circuit, and an output terminal for connecting the power storage unit to the secondary battery.

Abstract: The invention provides a gold-supporting catalyst comprising gold nanoparticles and a carrier consisting of porous ceramic obtained by firing a mixture comprising an aluminum compound, a lime component, and a plastic clay containing 1% by mass or less of feldspars and quartz, wherein the gold nanoparticles are supported in an amount of 0.01 to 10 parts by mass on the carrier based on 100 parts by mass of the carrier.

Abstract: Disclosed is a brass that possesses high corrosion resistance even without undergoing a heat treatment step contemplated for dezincification corrosion suppression. This brass includes 55% by mass to 75% by mass of Cu (copper), 0.01% by mass to 1.5% by mass of Si (silicon), Sn (tin) and Al (aluminum) in such amounts as to satisfy a prescribed relationship with an apparent Zn content, less than 0.25% by mass of Mn (manganese) as an optional ingredient, less than 0.05% by mass of Ti (titanium) as an optional ingredient, less than 0.3% by mass of Mg (magnesium) as an optional ingredient, less than 0.15% by mass of P (phosphorus) as an optional ingredient, and less than 0.004% by mass of a rare earth metal as an optional ingredient with the balance consisting of Zn (zinc) and unavoidable impurities, the apparent zinc content being 37 to 45.

Abstract: A brass free from lead and possessing excellent machinability, castability, mechanical properties, etc. consists of not less than 55% by weight and not more than 75% by weight of Cu, not less than 0.3% by weight and not more than 4.0% by weight of Bi, and y % by weight of B and x % by weight of Si, y and x satisfying the following requirements: 0?x?2.0, 0?y?0.3, and y>?0.15x+0.015ab, wherein a is 0.2 when Bi is 0.3% by weight?Bi<0.75% by weight; 0.85 when Bi is 0.75% by weight?Bi<1.5% by weight; and 1 when Bi is 1.5% by weight?Bi?4.0% by weight, b is 1 when the apparent content of zinc (Zn) is not less than 37% and less than 41%; and 0.75 when the apparent content of Zn is not less than 41% and not more than 45%, the balance consisting of Zn and unavoidable impurities.

Abstract: Disclosed is a brass having reduced amounts of lead and nickel or not containing them, and having improved castability and corrosion resistance. The brass, comprising Sn in the range of 0.05% to 0.2% by mass, at least one or more elements selected from the group consisting of Sb, As, and P with total amount thereof in the range of 0.05% to 0.32% by mass, Al in the range of 0.1% to 0.5% by mass, Zn in the range of 33.0% to 40.0% by mass, at least one or more elements selected from the group consisting of Pb and Bi with total amount thereof in the range of 0.005% to 0.25% by mass, Ni in the range of 0.5% or less by mass, Si in the range of 0.5% or less by mass, at least one or more elements selected from the group consisting of Fe and B with total amount thereof in the range of 0.0001% to 0.3% by mass, and the balance substantially consisting of Cu and unavoidable impurities, and also an apparent content of Zn in the range of 36% to 41%, is excellent in castability and corrosion resistance.

Abstract: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract: A brass free from lead and possessing excellent machinability, castability, mechanical properties, etc. consists of not less than 55% by weight and not more than 75% by weight of Cu, not less than 0.3% by weight and not more than 4.0% by weight of Bi, and y % by weight of B and x % by weight of Si, y and x satisfying the following requirements: 0?x?2.0, 0?y?0.3, and y>?0.15x+0.015ab, wherein a is 0.2 when Bi is 0.3% by weight?Bi<0.75% by weight; 0.85 when Bi is 0.75% by weight?Bi<1.5% by weight; and 1 when Bi is 1.5% by weight?Bi?4.0% by weight, b is 1 when the apparent content of zinc (Zn) is not less than 37% and less than 41%; and 0.75 when the apparent content of Zn is not less than 41% and not more than 45%, the balance consisting of Zn and unavoidable impurities.

Abstract: There is provided a brass free from lead (Pb) and possessing excellent machinability, castability, mechanical properties and other properties. A brass consisting of not less than 55% by weight and not more than 75% by weight of copper (Cu), not less than 0.3% by weight and not more than 4.0% by weight of bismuth (Bi), and y % by weight of boron (B) and x % by weight of silicon (Si), y and x satisfying the following requirements: 0?x?2.0, 0?y?0.3, and y>?0.15x+0.015ab, wherein a is 0.2 when Bi is 0.3% by weight ?Bi<0.75% by weight; 0.85 when Bi is 0.75% by weight ?Bi<1.5% by weight; and 1 when Bi is 1.5% by weight ?Bi?4.0% by weight, b is 1 when the apparent content of zinc (Zn) is not less than 37% and less than 41%; and 0.75 when the apparent content of Zn is not less than 41% and not more than 45%, the balance consisting of Zn and unavoidable impurities, is excellent in castability, as well as, for example, in machinability and mechanical properties.

Abstract: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract: Disclosed is a brass that possesses high corrosion resistance even without undergoing a heat treatment step contemplated for dezincification corrosion suppression. This brass includes 55% by mass to 75% by mass of Cu (copper), 0.01% by mass to 1.5% by mass of Si (silicon), Sn (tin) and Al (aluminum) in such amounts as to satisfy a prescribed relationship with an apparent Zn content, less than 0.25% by mass of Mn (manganese) as an optional ingredient, less than 0.05% by mass of Ti (titanium) as an optional ingredient, less than 0.3% by mass of Mg (magnesium) as an optional ingredient, less than 0.15% by mass of P (phosphorus) as an optional ingredient, and less than 0.004% by mass of a rare earth metal as an optional ingredient with the balance consisting of Zn (zinc) and unavoidable impurities, the apparent zinc content being 37 to 45.

Abstract: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract: A document conveying device, include a conveyance roller which conveys a document that is attached to a conveyance roller shaft; and a flywheel connected to the conveyance roller shaft.

Abstract: The sheet feeding apparatus of the invention includes a driving roller that is rotated by a predetermined driving source, a driven roller that rotates in response to movement of said driving roller, said driven roller being placed opposite said driving roller and having contact with a roller surface of said driving roller, a pressing member that presses a roller surface of said driven roller toward said roller surface of driving roller at a predetermined pressure, and driven roller holding member that includes an opening being elongated in a tangential direction at a contact point between said driven roller and said driving roller or between said driven roller and a sheet, on a circle forming said roller surface of said driven roller.

Abstract: A module 1 movable over the original surface 110 of the original reader 100 has a metal sheet frame 4 disposed in the vicinity of its gravitational center and having a substantially channel-like shape. A first and a second optical systems 2 and 3 and a drive source 6 assembled to be integral with a flat part 40 of the metal sheet frame 4. Thus, a reduced-size, improved quality and improved-accuracy original reader to be used for facsimile devices and image scanners is obtained.

Abstract: The sheet feeding apparatus of the invention includes a driving roller that is rotated by a predetermined driving source, a driven roller that rotates in response to movement of said driving roller, said driven roller being placed opposite said driving roller and having contact with a roller surface of said driving roller, a pressing member that presses a roller surface of said driven roller toward said roller surface of driving roller at a predetermined pressure, and driven roller holding member that includes an opening being elongated in a tangential direction at a contact point between said driven roller and said driving roller or between said driven roller and a sheet, on a circle forming said roller surface of said driven roller.

Abstract: An automatic document feeder is mounted on a platen cover, which is located on a housing of a manuscript scanning section and movable relative to the housing to have open and shut states. The automatic document feeder is provided with: a manuscript stacker adapted to have manuscripts stacked on it; an outer frame structure having the manuscript stacker movable to attain the open and shut states; and a handle section provided integrally with the outer frame structure and disposed anteriorly to the manuscript stacker. The space between the manuscript stacker and the platen cover serves as a manuscript discharging section. The handle section is formed in a shape so as to avoid narrowing the entrance for inserting a hand into the manuscript discharging section.

Abstract: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract: In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract: A document conveying device, include a conveyance roller which conveys a document that is attached to a conveyance roller shaft; and a flywheel connected to the conveyance roller shaft.

Abstract: There is provided a brass free from lead (Pb) and possessing excellent machinability, castability, mechanical properties and other properties. A brass consisting of not less than 55% by weight and not more than 75% by weight of copper (Cu), not less than 0.3% by weight and not more than 4.0% by weight of bismuth (Bi), and y % by weight of boron (B) and x % by weight of silicon (Si), y and x satisfying the following requirements: 0?x?2.0, 0?y?0.3, and y>?0.15x+0.015ab, wherein a is 0.2 when Bi is 0.3% by weight ?Bi<0.75% by weight; 0.85 when Bi is 0.75% by weight ?Bi<1.5% by weight; and 1 when Bi is 1.5% by weight ?Bi?4.0% by weight, b is 1 when the apparent content of zinc (Zn) is not less than 37% and less than 41%; and 0.75 when the apparent content of Zn is not less than 41% and not more than 45%, the balance consisting of Zn and unavoidable impurities, is excellent in castability, as well as, for example, in machinability and mechanical properties.