Abstract: Disclosed is a transport method to be performed in an analysis system configured to transport a specimen to an analyzer configured to analyze an analyte contained in the specimen, the transport method comprising: cooling and preserving, in a cooling-and-preserving part, a quality control specimen containing an analyte having a known concentration; and controlling transport of the quality control specimen between the cooling-and-preserving part and the analyzer on the basis of a status of the analyzer.

Abstract: A quality control method of a specimen analysis system according to one or more embodiments is disclosed. The quality control method may include cooling and storing a quality control material comprising a cell of known concentration; heating the cooled and stored quality control material; transporting the heated quality control material to an analyzer; and measuring the quality control material by the analyzer.

Abstract: A quality control method of a specimen analysis system is disclosed, including: receiving a setting of a quality control measurement condition from a user; determining at least one quality control specimen to be used for quality control measurement from among a plurality of the quality control specimens stored in a storage, according to the quality control measurement condition and information on the quality control specimens that are stored in the storage section; taking out the determined quality control specimen from the storage; transporting the determined quality control specimen to a measurement unit; and measuring the transported quality control specimen by the measurement unit.

Abstract: A method for controlling a specimen analysis system including at least one measurement unit according to one or more embodiments is disclosed. The method may include automatically starting at least one measurement unit according to a schedule registered by a user; automatically supplying a quality control specimen to the measurement unit that is automatically started; and measuring the quality control specimen by the measurement unit.

Abstract: A bonded substrate includes a lithium tantalate substrate and a sapphire substrate to which the lithium tantalate substrate is bonded, a bonded interface of the lithium tantalate and the sapphire substrate includes a bonded region in an amorphous state having a thickness of 0.3 nm to 2.5 nm. The bonded region in the amorphous state is formed by activating at least one of the lithium tantalate substrate and the sapphire substrate in the bonded interface with neutralized atom beams, ion beams or plasma of inert gas or oxygen. It is possible to bond the piezoelectric substrate to the supporting substrate having different lattice constants without the high-temperature thermal treatment and realize the bonded substrate having an excellent bonding strength and being less warped.

Abstract: A bonded substrate includes a lithium tantalate substrate and a sapphire substrate to which the lithium tantalate substrate is bonded, a bonded interface of the lithium tantalate and the sapphire substrate includes a bonded region in an amorphous state having a thickness of 0.3 nm to 2.5 nm. The bonded region in the amorphous state is formed by activating at least one of the lithium tantalate substrate and the sapphire substrate in the bonded interface with neutralized atom beams, ion beams or plasma of inert gas or oxygen. It is possible to bond the piezoelectric substrate to the supporting substrate having different lattice constants without the high-temperature thermal treatment and realize the bonded substrate having an excellent bonding strength and being less warped.