Patents by Inventor Toru Ujihara

Toru Ujihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11460305
    Abstract: An information processing apparatus for providing aid to people in need of assistance outdoors. The information processing apparatus includes a controller. When a request for a search for a route is received, the controller generates, using a link and a node at which travel by a wheelchair is possible, a section to be included in the route between two locations and that is to be traveled by the wheelchair.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: October 4, 2022
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yusuke Hara, Shuhei Aketa, Toru Yanagida, Shin Sakurada, Tae Sugimura, Yasutaka Ujihara
  • Patent number: 11449808
    Abstract: An information processing apparatus includes a controller. The controller performs control to store service specifications received from a first terminal apparatus in association with a child-care facility corresponding to the first terminal apparatus. The controller performs control to store a child-care request received from a second terminal apparatus. The controller generates a pick-up route. The pick-up route is for navigating a vehicle to travel via a pick-up location of the child-care request within a pick-up time slot and reach a facility location at or after the child-care start time of the child-care facility. The controller sends, to a third terminal apparatus installed in a vehicle, the pick-up route.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: September 20, 2022
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yusuke Hara, Shuhei Aketa, Toru Yanagida, Shin Sakurada, Tae Sugimura, Yasutaka Ujihara
  • Publication number: 20220259108
    Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 18, 2022
    Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru UJIHARA, Yukihisa TAKEUCHI, Daishi SHIOJIRI, Masaki MATSUMOTO, Hiroshi SAITO, Ikuo HAYASHI
  • Patent number: 11345640
    Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: May 31, 2022
    Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru Ujihara, Yukihisa Takeuchi, Daishi Shiojiri, Masaki Matsumoto, Hiroshi Saito, Ikuo Hayashi
  • Publication number: 20220034829
    Abstract: A thermal conductivity estimation method includes: measuring temperature distribution of a measurement sample surface in a steady state by partially heating the measurement sample under predetermined heating conditions; calculating temperature distribution of a sample model surface by performing a heat-transfer simulation on the sample model of the same shape as the measurement sample for a plurality of combinations of provisional thermal conductivities and heating conditions; making a regression model, whose input is temperature distribution of the measurement sample surface and whose output is a thermal conductivity of the measurement sample, by a machine learning technique using training data in a form of a calculation result of the plurality of combinations and the temperature distribution obtained from the plurality of combinations; and estimating the thermal conductivity of the measurement sample by inputting a measurement result of the temperature distribution of the measurement sample surface into the
    Type: Application
    Filed: November 18, 2019
    Publication date: February 3, 2022
    Applicant: SUMCO CORPORATION
    Inventors: Ryusuke YOKOYAMA, Toshiyuki FUJIWARA, Yusuke HIGUCHI, Toru UJIHARA
  • Patent number: 11094835
    Abstract: It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm?3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm?3.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: August 17, 2021
    Assignees: MITSUBISHI ELECTRIC CORPORATION, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Tomoaki Furusho, Takanori Tanaka, Takeharu Kuroiwa, Toru Ujihara, Shunta Harada, Kenta Murayama
  • Publication number: 20210009885
    Abstract: A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals.
    Type: Application
    Filed: May 28, 2020
    Publication date: January 14, 2021
    Inventors: Toru UJIHARA, Yukihisa TAKEUCHI, Mingyu CHEN, Masashi NAGAYA
  • Patent number: 10651474
    Abstract: A lithium secondary battery has a positive electrode, an electrolyte containing lithium ions, and a negative electrode current collector having a surface on which a lithium metal or a lithium alloy is deposited/dissolved. In the surface of the negative electrode current collector, a group comprising at least one region whose principal crystal plane is a close-packed plane of the crystal structure or an off plane having an off-angle of 20° or less with respect to the close-packed plane occupies the largest area among three or four groups each comprising at least one region having a principal crystal plane three of whose Miller indices are each represented by 0 or 1 or an off-plane having an off-angle of 20° or less with respect to the principal crystal plane, the principal crystal plane being different for each of the three or four groups.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: May 12, 2020
    Assignee: PANASONIC CORPORATION
    Inventors: Toru Ujihara, Kohei Ishikawa
  • Publication number: 20200095170
    Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.
    Type: Application
    Filed: March 16, 2018
    Publication date: March 26, 2020
    Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru UJIHARA, Yukihisa TAKEUCHI, Daishi SHIOJIRI, Masaki MATSUMOTO, Hiroshi SAITO, Ikuo HAYASHI
  • Publication number: 20200013907
    Abstract: It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm?3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm?3.
    Type: Application
    Filed: February 20, 2018
    Publication date: January 9, 2020
    Applicants: Mitsubishi Electric Corporation, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Tomoaki FURUSHO, Takanori TANAKA, Takeharu KUROIWA, Toru UJIHARA, Shunta HARADA, Kenta MURAYAMA
  • Patent number: 10386314
    Abstract: Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: August 20, 2019
    Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru Ujihara, Fumiaki Ichihashi, Takahiko Kawaguchi, Takahiro Ito, Makoto Kuwahara, Peter Baltzer, Yukio Takeuchi
  • Publication number: 20190079033
    Abstract: Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.
    Type: Application
    Filed: November 2, 2016
    Publication date: March 14, 2019
    Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru UJIHARA, Fumiaki ICHIHASHI, Takahiko KAWAGUCHI, Takahiro ITO, Makoto KUWAHARA, Peter BALTZER, Yukio TAKEUCHI
  • Patent number: 10151046
    Abstract: Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.
    Type: Grant
    Filed: September 10, 2015
    Date of Patent: December 11, 2018
    Assignees: National University Corporation Nagoya University, Central Glass Co., Ltd.
    Inventors: Toru Ujihara, Shunta Harada, Daiki Koike, Tomonori Umezaki
  • Publication number: 20180198131
    Abstract: A lithium secondary battery has a positive electrode, an electrolyte containing lithium ions, and a negative electrode current collector having a surface on which a lithium metal or a lithium alloy is deposited/dissolved. In the surface of the negative electrode current collector, a group comprising at least one region whose principal crystal plane is a close-packed plane of the crystal structure or an off plane having an off-angle of 20° or less with respect to the close-packed plane occupies the largest area among three or four groups each comprising at least one region having a principal crystal plane three of whose Miller indices are each represented by 0 or 1 or an off-plane having an off-angle of 20° or less with respect to the principal crystal plane, the principal crystal plane being different for each of the three or four groups.
    Type: Application
    Filed: March 8, 2018
    Publication date: July 12, 2018
    Inventors: Toru UJIHARA, Kohei ISHIKAWA
  • Patent number: 9881767
    Abstract: A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.
    Type: Grant
    Filed: September 28, 2015
    Date of Patent: January 30, 2018
    Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Makoto Kuwahara, Nobuo Tanaka, Toru Ujihara, Koh Saitoh
  • Publication number: 20170309446
    Abstract: A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.
    Type: Application
    Filed: September 28, 2015
    Publication date: October 26, 2017
    Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Makoto KUWAHARA, Nobuo TANAKA, Toru UJIHARA, Koh SAITOH
  • Publication number: 20170260647
    Abstract: Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.
    Type: Application
    Filed: September 10, 2015
    Publication date: September 14, 2017
    Inventors: Toru UJIHARA, Shunta HARADA, Daiki KOIKE, Tomonori UMEZAKI
  • Publication number: 20170183553
    Abstract: An AlN crystal preparation method includes using at least one element excluding Si that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN. In the preparation method, a composition including at least Al and the element is melted. Al vapor and nitrogen gas are reacted at a prescribed reaction temperature. AlN crystals are formed.
    Type: Application
    Filed: May 21, 2015
    Publication date: June 29, 2017
    Inventors: Toru UJIHARA, Yukihisa TAKEUCHI, Mingyu CHEN, Masashi NAGAYA
  • Patent number: 9671356
    Abstract: A technique of measuring energy of electrons excited by exposing a semiconductor material to solar ray is proposed. A surface layer having a negative electron affinity is formed on the surface of a semiconductor material. The semiconductor material is placed in a vacuum environment and exposed to solar ray. Photoelectrons emitted from the surface layer having the negative electron affinity are guided to an energy analyzer, and the energy of electrons excited by the solar ray is measured. Since the surface layer having the negative electron affinity is used, the photoelectrons are obtained from the electrons excited by the solar ray, and thereby energy measurement becomes possible.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: June 6, 2017
    Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru Ujihara, Fumiaki Ichihashi, Daiki Shimura, Makoto Kuwahara, Shunta Harada
  • Publication number: 20160047760
    Abstract: A technique of measuring energy of electrons excited by exposing a semiconductor material to solar ray is proposed. A surface layer having a negative electron affinity is formed on the surface of a semiconductor material. The semiconductor material is placed in a vacuum environment and exposed to solar ray. Photoelectrons emitted from the surface layer having the negative electron affinity are guided to an energy analyzer, and the energy of electrons excited by the solar ray is measured. Since the surface layer having the negative electron affinity is used, the photoelectrons are obtained from the electrons excited by the solar ray, and thereby energy measurement becomes possible.
    Type: Application
    Filed: December 24, 2013
    Publication date: February 18, 2016
    Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru UJIHARA, Fumiaki ICHIHASHI, Daiki SHIMURA, Makoto KUWAHARA, Shunta HARADA