Abstract: A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals.

Abstract: To provide a resin molded body having AlN whiskers with excellent thermal conductivity, and a method for producing the same. The resin molded body includes at least, AlN whiskers each having a fibrous AlN single-crystal body having a surface and an oxygen-containing layer covering the surface of the fibrous AlN single-crystal body, and a resin material, wherein a weight ratio of the AlN whiskers is in a range of 3.0 wt % or more and 65.0 wt % or less.

Abstract: A learning method includes: causing an observer to perceive information to be compared by the observer from among a plurality of pieces of perceivable information; acquiring evaluation for the information made by the observer; and rating the plurality of pieces of information based on the evaluation made by the observer for the plurality of pieces of information acquired by a plurality of repetitions of the causing the observer to perceive the information and the acquiring the evaluation.

Abstract: A thermal conductivity estimation method includes: measuring temperature distribution of a measurement sample surface in a steady state by partially heating the measurement sample under predetermined heating conditions; calculating temperature distribution of a sample model surface by performing a heat-transfer simulation on the sample model of the same shape as the measurement sample for a plurality of combinations of provisional thermal conductivities and heating conditions; making a regression model, whose input is temperature distribution of the measurement sample surface and whose output is a thermal conductivity of the measurement sample, by a machine learning technique using training data in a form of a calculation result of the plurality of combinations and the temperature distribution obtained from the plurality of combinations; and estimating the thermal conductivity of the measurement sample by inputting a measurement result of the temperature distribution of the measurement sample surface into the

Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: A thermal conductivity estimation method includes: measuring temperature distribution of a measurement sample surface in a steady state by partially heating the measurement sample under predetermined heating conditions; calculating temperature distribution of a sample model surface by performing a heat-transfer simulation on the sample model of the same shape as the measurement sample for a plurality of combinations of provisional thermal conductivities and heating conditions; making a regression model, whose input is temperature distribution of the measurement sample surface and whose output is a thermal conductivity of the measurement sample, by a machine learning technique using training data in a form of a calculation result of the plurality of combinations and the temperature distribution obtained from the plurality of combinations; and estimating the thermal conductivity of the measurement sample by inputting a measurement result of the temperature distribution of the measurement sample surface into the

Abstract: It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm?3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm?3.

Abstract: A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals.

Abstract: A lithium secondary battery has a positive electrode, an electrolyte containing lithium ions, and a negative electrode current collector having a surface on which a lithium metal or a lithium alloy is deposited/dissolved. In the surface of the negative electrode current collector, a group comprising at least one region whose principal crystal plane is a close-packed plane of the crystal structure or an off plane having an off-angle of 20° or less with respect to the close-packed plane occupies the largest area among three or four groups each comprising at least one region having a principal crystal plane three of whose Miller indices are each represented by 0 or 1 or an off-plane having an off-angle of 20° or less with respect to the principal crystal plane, the principal crystal plane being different for each of the three or four groups.

Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm?3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm?3.

Abstract: Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.

Abstract: Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.

Abstract: Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.

Abstract: A lithium secondary battery has a positive electrode, an electrolyte containing lithium ions, and a negative electrode current collector having a surface on which a lithium metal or a lithium alloy is deposited/dissolved. In the surface of the negative electrode current collector, a group comprising at least one region whose principal crystal plane is a close-packed plane of the crystal structure or an off plane having an off-angle of 20° or less with respect to the close-packed plane occupies the largest area among three or four groups each comprising at least one region having a principal crystal plane three of whose Miller indices are each represented by 0 or 1 or an off-plane having an off-angle of 20° or less with respect to the principal crystal plane, the principal crystal plane being different for each of the three or four groups.

Abstract: A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.

Abstract: A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.