Abstract: A pump control device and a valve control device each includes: an instruction calculator that calculates a control instruction of causing a controlled object to operate by using a manipulation amount of a manipulation and at least one control parameter, and inputs the calculated control instruction to the controlled object; and an ideal output calculator that calculates an ideal output of an actuator, the ideal output being associated with the manipulation amount of the manipulation. The pump control device adjusts at least one pump control parameter to reduce a difference between a control output and the ideal output when an operation of a movable part is a power running operation. The valve control device adjusts at least one valve control parameter to reduce a difference between a control output and the ideal output when the operation of the movable part is a non-power running operation.

Abstract: In the present invention, a conductive film having low resistance is formed on a substrate, said film having excellent storage stability and high dispersion stability as an ink. A copper oxide ink (1) contains a copper oxide (2), a dispersant (3), and a reducing agent. The content of the reducing agent is in the range of formula (1), and the content of the dispersant is in the range of formula (2). (1) 0.00010?(reducing agent mass/copper oxide mass)?0.10 (2) 0.0050?(dispersant mass/copper oxide mass)?0.30 The reducing agent content promotes the reduction of copper oxide to copper during firing, and promotes the sintering of copper.

Abstract: In the present invention, a conductive film having low resistance is formed on a substrate, said film having excellent storage stability and high dispersion stability as an ink. A copper oxide ink (1) contains a copper oxide (2), a dispersant (3), and a reducing agent. The content of the reducing agent is in the range of formula (1), and the content of the dispersant is in the range of formula (2). (1) 0.00010?(reducing agent mass/copper oxide mass)?0.10 (2) 0.0050?(dispersant mass/copper oxide mass)?0.30 The reducing agent content promotes the reduction of copper oxide to copper during firing, and promotes the sintering of copper.

Abstract: Provided is a method that is for manufacturing a conductive pattern-provided structure, that involves simple manufacturing steps, and that enables formation of a conductive pattern-provided structure having excellent interlayer adhesion. One mode of the present invention provides a method for manufacturing a conductive pattern-provided structure, the method comprising: a coating film formation step for obtaining a coating film by printing, on a base material, a dispersion that contains copper oxide-containing particles; and a plating step for performing electroless plating on the coating film by using a plating solution. The plating solution contains EDTA (ethylenediaminetetraacetic acid).

Abstract: Provided are: a structure with a conductive pattern that can be obtained in a simple manufacturing process and that exhibits favorable interlayer adhesion; and a method for manufacturing same. An embodiment of the present invention provides a structure with a conductive pattern, the structure comprising a base material, and a copper-containing conductive layer arranged on the surface of the base material, wherein when a principal surface of the conductive layer on the side facing the base material is a first principal surface, and a principal surface of the conductive layer on the opposite side from the first principal surface is a second principal surface, the conductive layer: has a porosity of 0.01 to 50 volume percent in a first principal surface-side region that extends from the first principal surface to a depth of 100 nm in the thickness direction of the conductive layer.

Abstract: A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2). 0.0001?(reductant mass/copper oxide mass)?0.10??(1) 0.0050?(dispersing agent mass/copper oxide mass)?0.30??(2) The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

Abstract: A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2). 0.0001?(reductant mass/copper oxide mass)?0.10??(1) 0.0050?(dispersing agent mass/copper oxide mass)?0.30??(2) The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

Abstract: Provided is a structure that has highly reliable electroconductive pattern regions, that offers an extremely simple manufacturing process, and that has excellent electrical insulation between the electroconductive pattern regions. This structure (10) having electroconductive pattern regions is provided with a support (11), and, on a surface configured by the support, a layer (14) in which insulation regions (12) containing a copper oxide- and phosphorus-containing organic substance and electroconductive pattern regions (13) containing copper are disposed next to one another. This stack is provided with: a support, a coating layer containing copper oxide and phosphorus and disposed on a surface configured by the support; and a resin layer disposed so as to cover the coating layer.

Abstract: A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2). 0.0001?(reductant mass/copper oxide mass)?0.10??(1) 0.0050?(dispersing agent mass/copper oxide mass)?0.30??(2) The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

Abstract: In the present invention, a conductive film having low resistance is formed on a substrate, said film having excellent storage stability and high dispersion stability as an ink. A copper oxide ink (1) contains a copper oxide (2), a dispersant (3), and a reducing agent. The content of the reducing agent is in the range of formula (1), and the content of the dispersant is in the range of formula (2). (1) 0.00010?(reducing agent mass/copper oxide mass)?0.10 (2) 0.0050?(dispersant mass/copper oxide mass)?0.30 The reducing agent content promotes the reduction of copper oxide to copper during firing, and promotes the sintering of copper.

Abstract: The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.

Abstract: Provided is a structure that has highly reliable electroconductive pattern regions, that offers an extremely simple manufacturing process, and that has excellent electrical insulation between the electroconductive pattern regions. This structure (10) having electroconductive pattern regions is provided with a support (11), and, on a surface configured by the support, a layer (14) in which insulation regions (12) containing a copper oxide- and phosphorus-containing organic substance and electroconductive pattern regions (13) containing copper are disposed next to one another. This stack is provided with: a support, a coating layer containing copper oxide and phosphorus and disposed on a surface configured by the support; and a resin layer disposed so as to cover the coating layer.

Abstract: Provided are a solar cell that can be manufactured by non-vacuum process and can have more excellent photoelectric conversion efficiency and a manufacturing method therefor as well as such a semiconductor device and a manufacturing method therefor. A solar cell, includes at least a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and a compound having relative permittivity of 2 or more and 1,000 or less. For instance, the content of the organic compound in the first semiconductor layer is 10 mass % or more and 90 mass % or less.

Abstract: The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.

Abstract: A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2). 0.0001?(reductant mass/copper oxide mass)?0.10??(1) 0.0050?(dispersing agent mass/copper oxide mass)?0.30??(2) The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

Abstract: Provided are a solar cell that can be manufactured by non-vacuum process and can have more excellent photoelectric conversion efficiency and a manufacturing method therefor as well as such a semiconductor device and a manufacturing method therefor. A solar cell, includes at least a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and a compound having relative permittivity of 2 or more and 1,000 or less. For instance, the content of the organic compound in the first semiconductor layer is 10 mass % or more and 90 mass % or less.

Abstract: Provided are a solar cell that can be manufactured by non-vacuum process and can have more excellent photoelectric conversion efficiency and a manufacturing method therefor as well as such a semiconductor device and a manufacturing method therefor. A solar cell, includes at least a first semiconductor layer (140) and a second semiconductor layer (130). The first semiconductor layer (140) includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and a compound having relative permittivity of 2 or more and 1,000 or less. For instance, the content of the organic compound in the first semiconductor layer (140) is 10 mass % or more and 90 mass % or less.

Abstract: The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.

Abstract: Provided are a solar cell that can be manufactured by non-vacuum process and can have more excellent photoelectric conversion efficiency and a manufacturing method therefor as well as such a semiconductor device and a manufacturing method therefor. A solar cell, includes at least a first semiconductor layer (140) and a second semiconductor layer (130). The first semiconductor layer (140) includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and a compound having relative permittivity of 2 or more and 1,000 or less. For instance, the content of the organic compound in the first semiconductor layer (140) is 10 mass % or more and 90 mass % or less.

Abstract: The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.