Abstract: A method of forming an impurity region for an MIS type semiconductor device includes the step of activating an implanted impurity with an energy beam anneal, said implantation comprising multiple impurity ion implantation steps with varied implantation energies. The implantation energy and dosage are selected to provide a total peak concentration of implantation profile which does not exceed the electrically active solubility. The energy beam anneal is performed in such a way that the implanted impurity is substantially activated without redistribution. An impurity region with low sheet resistance is obtained, lateral diffusion of the impurity is suppressed, and the leakage current is kept low.