Abstract: A positive working photosensitive composition suitable for exposure using a light source of wavelengths of 250 nm or shorter, particularly 220 nm or shorter; comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation and (B) a resin which comprises constitutional repeating units having alicyclic groups of particular structures, including adamantyl groups, and has groups capable of decomposing due to the action of acids to increase the solubility in an alkali developer.

Abstract: The present invention provides a positive resist fluid excellent in the storage stability of the fluid and in defocus latitude depended on line pitch, and a positive photoresist composition for far ultraviolet exposure which forms a resist pattern having excellent defocus latitude depended on line pitch and has excellent sensitivity to short-wavelength exposure lights. The positive resist fluid comprises a resin which contains repeating units represented by formula (I) as defined in the specification, a photo-acid generator, and a solvent and the positive photoresist composition for far ultraviolet exposure comprises a resin which contains both alkali-soluble groups protected by groups containing an alicyclic hydrocarbon structure and represented by at least one of formulae (pI) to (pVI) and groups represented by formula (qI): —A—X—R5 as defined in the specification.

Abstract: A positive photoresist composition comprising (A) a compound which generates a sulfonic acid having naphthalene structure by the irradiation with actinic rays of a wavelength of 220 nm or less or radiation, and (B) a resin whose solubility in an alkali developing solution increases by the action of an acid is disclosed.

Abstract: A positive resist composition comprising:

Abstract: A positive photosensitive composition comprises: (A) a compound generating an acid upon irradiation with one of an actinic ray and radiation; (B) a resin containing a monocyclic or polycyclic alicyclic hydrocarbon structure and increasing the solubility to an alkali developer by the action of an acid; and (C) an onium salt of carboxylic acid.

Abstract: A positive photosensitive composition is disclosed which comprises a compound generating an acid upon irradiation with actinic rays or a radiation and a resin having groups which decompose by the action of an acid to enhance solubility in an alkaline developing solution, said resin being obtained by reacting an alkali-soluble resin having phenolic hydroxyl groups with at least one specific enol ether compound under acid conditions in a specific organic solvent. The positive photosensitive composition shows improved discrimination between nonimage areas and image areas, has high sensitivity, high resolving power, and high heat resistance, suffers little change in performance with the lapse of time from exposure to light to heat treatment (PED), and is free from defects, e.g., development defects.

Abstract: Provided is a positive photoresist composition comprising a resin which contains specific repeating units and whose dissolving rate toward an alkaline developing solution is increased by the action of an acid and a compound which generates an acid upon irradiation with an actinic ray or a radiation.

Abstract: A positive type photoresist composition suitable for light in the wavelength region of 170 nm to 220 nm, high in sensitivity, excellent in adhesion and giving a good resist pattern profile, which comprises a resin having an ester group represented by the following general formula [I] in its molecule and a compound generating an acid by irradiation of an active light ray or radiation: 1

Abstract: The present invention provides a novel (meth)acrylic acid ester compound useful as a resin material for photosensitive compositions, which enables control of the molecular weight of a resin to be prepared.

Abstract: A positive photoresist composition which comprises (A) a resin having a group which decomposes by the action of an acid to increase solubility in an alkaline developing solution, and (B) a compound which generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom upon irradiation with an actinic ray or radiation.

Abstract: A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III)

Abstract: A positive-working electron beam or X-ray resist composition comprising: (a) a compound capable of generating an acid by irradiation of an electron beam or X-ray; (b) a resin containing a group which is decomposable by action of an acid to increase solubility in an alkali developing solution or (e) a resin insoluble in water and soluble in the alkali developing solution; and (c) a fluorine and/or silicon surfactant, the compound capable of generating an acid by irradiation of an electron beam or X-ray being a compound which generates benzenesulfonic acid, naphthalenesulfonic acid or anthracenesulfonic acid which is substituted by at least one fluorine atom and/or at least one group containing a fluorine atom.

Abstract: Disclosed is a positive resist composition which ensures, on use of an exposure light source of 220 nm or less, high sensitivity, good resolution, sufficiently high resistance against dry etching, satisfactory adhesion to the substrate, and superior developability even with a developer conventionally used for resists (for example, a 2.38% aqueous tetramethylammonium hydroxide solution), the positive resist composition comprising a compound generating an acid on irradiation of an active light ray or radiation, a resin having a polycyclic-type alicyclic group and a carboxyl group, and a compound having at least two groups having a specific structure.

Abstract: A positive photoresist composition for far ultraviolet ray exposure use, which comprises a resin that contains a repeating structural unit composed of a monomer having a specified acid-decomposable group and another monomer having an amine structure in its molecule and is decomposed by the action of an acid thereby increasing its alkali solubility, and a compound that generates an acid by irradiation of an active light ray or radiation, or a positive photoresist composition for far ultraviolet ray exposure use, which comprises a resin that contains a monomer having a specified acid-decomposable group, as a repeating structural unit, and is decomposed by the action of an acid thereby increasing its alkali solubility, a compound that generates an acid by irradiation of an active light ray or radiation and a basic low molecular weight compound.

Abstract: An object of the present invention is to provide a positive photosensitive composition suitable for use with an exposure light having a wavelength of 250 nm or shorter, especially 220 nm or shorter.

Abstract: A positive type photoresist composition suitable for light in the wavelength region of 170 nm to 220 nm, high in sensitivity, excellent in adhesion and giving a good resist pattern profile, which comprises a resin having an ester group represented by the following general formula [I] in its molecule and a compound generating an acid by irradiation of an active light ray or radiation: wherein R1 represents a hydrogen atom, an alkyl group or a cycloalkyl group; and R2 and R3, which may be the same or different, each represents a hydrogen atom, an alkyl group, a cycloalkyl group or —A—R4, and R2 and R3 may combine together to form a ring, wherein R4 represents a hydrogen atom, an alkyl group or a cycloalkyl group, R4 and R2 or R3 may combine together to form a ring, and A represents an oxygen atom or a sulfur atom.

Abstract: Provided is a positive photosensitive composition which has high photosensitivity, is capable of giving an excellent resist pattern, and changes little with time after exposure. The positive photosensitive composition comprises (1) a resin having group(s) capable of decomposing by the action of an acid to enhance solubility of the resin in an alkaline developing solution and (2) a compound represented by formula (I), (II) or (III) which is capable of generating a sulfonic acid upon irradiation with actinic rays or a radiation: wherein R1 to R5 and R7 to R10 each represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, a hydroxy group, a halogen atom, or a group represented by —S—R6, where R6 represents an alkyl group or an aryl group; X− represents the anion of a benzenesulfonic, naphthalenesulfonic, or anthracenesulfonic acid as deifined in the specification; and m, n, p and q each represents an integer of 1 to 3.

Abstract: The present invention provides a positive photosensitive resin composition which, when exposed to far ultraviolet rays, in particular, ArF excimer laser light, shows excellent performances especially with respect to the residual film ratio, resist profile, resolution, and dry-etching resistance and does not pose the problem of development defects. The positive photosensitive resin composition comprising:(A) a compound which generates an acid upon irradiation with actinic rays,(B) a polymer having specific structures represented by formula (Ia), (Ib), (Ic) or (Id) defined in the specification,(C) a nitrogen-containing basic compound, and(D) at least one of a fluorine type surfactant and a silicone type surfactant.

Abstract: A photosensitive resin composition for far-ultraviolet exposure of from 170 to 220 nm, which comprises an N-hydroxymaleinimide-type sulfonate photo acid generator having a specific structure and a resin having a substituent capable of increasing the solubility to an alkali developer by an acid, and a pattern forming method using the photosensitive resin composition. The photosensitive resin composition has a high transparency to light having a wavelength of from 170 to 220 nm and is excellent in the photocomposition property and the acid generating efficiency.

Abstract: The present invention provides an excellent chemically-sensitized positive-working photoresist composition which exhibits a high resolution and a good dimensional stability with time, generates no development residue (scum) and standing waves and is less liable to loss of lone pattern. A novel positive-working photoresist composition is provided comprising at least (a) a copolymer A having at least structural units representedby the following general formulae (I), (II) and (III), (b) a compound which generates an acid when irradiated with actinic rays or radiation and (c) a solvent: ##STR1## wherein R.sub.1 and R.sub.2 each independently represent a hydrogen atom or methyl group; R.sub.3 represents a tertiary alkyl or cycloalkyl group which may be substituted; and X represents a divalent organic residue.