Abstract: There is provided an article inspection system including: an additional processing control unit that executes additional processing on an article determined to be defective among inspected articles, according to an inspection result of an article inspection unit, in which the additional processing control unit includes a quality state determination unit that determines which one of a plurality of preset quality states the inspection result corresponds to, and processing request selection means for selecting any one of first processing request information for requesting a working machine to perform first additional processing work by the working machine and second processing request information for requesting second manual additional processing work, according to a determination result of the quality state determination unit.

Abstract: A semiconductor manufacturing apparatus includes: a stage configured to support a semiconductor substrate; and a conductive annular member provided at an outer circumferential portion of the stage and configured to enclose the semiconductor substrate when supported on the stage. The stage has a groove that is provided below a lower portion of an inner circumferential end of the annular member.

Abstract: A thermosensitive recording medium including a base and a recording layer including a photothermal conversion material and disposed on the base, wherein the thermosensitive recording medium is configured to record information in the thermosensitive recording medium through laser light irradiation, and wherein a color difference delta E between a color tone A of a background observed through the thermosensitive recording medium in which information is not recorded and a color tone B of the background directly observed without the thermosensitive recording medium in which information is not recorded is 20 or less, and a film thickness D of an area of the recording layer irradiated with laser light after information recording performed by laser light irradiation is 140% or greater but 250% or less relative to a film thickness C of the recording layer of the thermosensitive recording medium in which information is not recorded.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A semiconductor manufacturing apparatus includes: a stage configured to support a semiconductor substrate; and a conductive annular member provided at an outer circumferential portion of the stage and configured to enclose the semiconductor substrate when supported on the stage. The stage has a groove that is provided below a lower portion of an inner circumferential end of the annular member.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A conveyor line system including an image processing device configured to irradiate a recording part with laser light to perform at least one of image recording and image erasing, the conveyor line system being configured to manage at least one conveying container each including: the recording part in which the image recording is performed by irradiation with the laser light; and an image part in which a displayed image has been drawn, wherein a formula below is satisfied at a wavelength of the laser light with which the recording part is irradiated during the image recording: A+30>B where A denotes an absorbance of the recording part and B denotes an absorbance of the image part of the conveying container.

Abstract: A thermoreversible recording medium including a support, and a thermoreversible recording layer, which is disposed on the support, and contains a leuco dye, and a reversible color developer, wherein an average particle diameter of granules in the thermoreversible recording layer is 0.35 micrometers or smaller.

Abstract: A conveyor line system including an image processing device configured to irradiate a recording part with laser light to perform at least one of image recording and image erasing, the conveyor line system being configured to manage at least one conveying container each including: the recording part in which the image recording is performed by irradiation with the laser light; and an image part in which a displayed image has been drawn, wherein a formula below is satisfied at a wavelength of the laser light with which the recording part is irradiated during the image recording: A+30>B where A denotes an absorbance of the recording part and B denotes an absorbance of the image part of the conveying container.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: Provided is an image processing apparatus configured to perform by itself image erasing and image recording to a thermally reversible recording medium by irradiating it with laser light and heating it, including a laser light emitting unit, a laser light scanning unit, a focal length control unit, and an information setting unit. During image erasing, the focal length control unit performs control to defocus at the position of the thermally reversible recording medium. During image recording, the focal length control unit performs control to be at a focal length from the position of the thermally reversible recording medium. Immediately after image erasing based on image erasing information set by the information setting unit is completed, image recording is performed based on image recording information.

Abstract: Provided is an image erasing method including heating a thermoreversible recording medium with laser beams to erase an image which has been recorded on the thermoreversible recording medium, the thermoreversible recording medium reversibly changing between a colored state and a decolored state depending on a heating temperature and a cooling time; and measuring at least one of a surface temperature of the thermoreversible recording medium and an erasing environmental temperature before a beginning of erasing the image to obtain a measured temperature value and controlling a heating time with the laser beams to be emitted for erasing the image depending on the measured temperature value.

Abstract: A conveyor line system, including: an image processing device configured to irradiate a recording part with laser light to record or erase, or record and erase an image, wherein the conveyor line system is configured to manage a conveying container containing the recording part, and wherein the following formula is satisfied at a wavelength of the laser light emitted from the image processing device when recording the image: A+50>B where A is an absorbance of the recording part, and B is an absorbance of the conveying container.

Abstract: A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width ? (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width ? (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25° C. and light output P (80) at 80° C. with a same operating current is 95% or more.

Abstract: Provided is an image processing method, the method including heating a thermoreversible recording medium with laser beams to erase an image which has been recorded on the thermoreversible recording medium, the thermoreversible recording medium reversibly changing between a colored state and a decolored state depending on a heating temperature and a cooling time; heating the thermoreversible recording medium, on which the image has been erased, with the laser beams to record a subsequent image on the thermoreversible recording medium; and measuring at least one of a surface temperature of the thermoreversible recording medium and a recording environmental temperature after a completion of erasing the image but before a beginning of recording the subsequent image to obtain a measured temperature value and controlling a time interval between the completion of erasing the image and the beginning of recording the subsequent image depending on the measured temperature value.

Abstract: A conveyor line system, including: an image processing device configured to irradiate a recording part with laser light to record or erase, or record and erase an image, wherein the conveyor line system is configured to manage a conveying container containing the recording part, and wherein the following formula is satisfied at a wavelength of the laser light emitted from the image processing device when recording the image: A+50>B where A is an absorbance of the recording part, and B is an absorbance of the conveying container.

Abstract: An optical information code reading method, including reading an optical information code image by an optical information code scanner immediately after the optical information code image has been recorded onto an information recording medium, wherein the optical information code scanner includes an amplitude tuning unit configured to correct a detected amplitude level of reflectivity from the information recording medium on which the optical information code image has been recorded and to store the corrected detected amplitude level, and wherein the optical information code scanner reads the optical information code image in a state in which the optical information code scanner has read the information recording medium on which the optical information code image has been recorded, and the amplitude tuning unit has determined and stored a detected amplitude level optimum for reading.

Abstract: Provided is an image recording system for recording an image on a thermally reversible recording medium held by a conveyed article conveyed on a predetermined conveying path in a predetermined conveying direction, including: a recording device provided on at least one side of the conveying path in a direction perpendicular to the conveying direction and configured to record an image on the thermally reversible recording medium of the conveyed article conveyed to a position facing the recording device by heating the thermally reversible recording medium. The image includes a scan image to be read by a reading device when the conveyed article is conveyed downstream in the conveying direction from the position facing the recording device. The recording device records the scan image on the thermally reversible recording medium within a former half of a recording time of the image.

Abstract: Provided is an image processing apparatus configured to perform by itself image erasing and image recording to a thermally reversible recording medium by irradiating it with laser light and heating it, including a laser light emitting unit, a laser light scanning unit, a focal length control unit, and an information setting unit. During image erasing, the focal length control unit performs control to defocus at the position of the thermally reversible recording medium. During image recording, the focal length control unit performs control to be at a focal length from the position of the thermally reversible recording medium. Immediately after image erasing based on image erasing information set by the information setting unit is completed, image recording is performed based on image recording information.