Patents by Inventor Toshiaki Fujisato

Toshiaki Fujisato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140060572
    Abstract: In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a hydrogen-containing gas. The remote plasma generating unit has an outlet for discharging the excited gas. A diffusion unit is provided to correspond to the outlet of the remote plasma generating unit and serves to receive the excited gas flowing from the outlet and diffuse the hydrogen active species having a reduced amount of hydrogen ions. An ion filter is disposed between the diffusion unit and the mounting table while being separated from the diffusion unit. The ion filter serves to capture the hydrogen ions contained in the hydrogen active species diffused by the diffusion unit and allow the hydrogen active species having a further reduced amount of hydrogen ions to pass therethrough the mounting table.
    Type: Application
    Filed: August 26, 2013
    Publication date: March 6, 2014
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Chiaki YASUMURO, Takashi Sakuma, Osamu Yokoyama, Hiroyuki Toshima, Masamichi Hara, Cheonsoo Han, Morihiro Takanashi, Toshiaki Fujisato
  • Patent number: 8592712
    Abstract: A mounting table structure for mounting thereon an object to be processed to form a metal-containing thin film on the object includes a ceramic mounting table in which a chuck electrode and a heater are embedded, and a metal flange connected to a bottom surface of a peripheral portion of the mounting table. The mounting table structure further includes a metal base which is joined to the flange by screws and has a coolant path for flowing a coolant therein, and a metal seal member interposed between the flange and the base.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: November 26, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Toshiaki Fujisato, Ronald Nasman
  • Publication number: 20130001076
    Abstract: A mounting table structure includes a mounting table body, made of a conductive material, for mounting thereon the processing target object and serving as an electrode; a base table, made of a conductive material, disposed below the mounting table body with a gap therebetween in a state insulated from the mounting table body; a support column, connected to the ground side, for supporting the base table; a high frequency power supply line, connected to the mounting table body, for supplying a high frequency bias power to the mounting table body; and a power stabilization capacitor provided between the ground side and a hot side to which the high frequency bias power is applied. Here, an electrostatic capacitance of the power stabilization capacitor is set to be larger than an electrostatic capacitance of a stray capacitance between the mounting table body and the protective cover member.
    Type: Application
    Filed: September 21, 2010
    Publication date: January 3, 2013
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toshiaki Fujisato, Shiro Hayashi, Hiroyuki Yokohara
  • Publication number: 20120315404
    Abstract: A method for vapor deposition on a substrate in a vapor deposition system having a process space separated from a transfer space. The method disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space by way of a movement accommodating sealing material, and deposits a material on the substrate at either the first position or the second position.
    Type: Application
    Filed: August 1, 2012
    Publication date: December 13, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yicheng LI, Tadahiro ISHIZAKA, Kaoru YAMAMOTO, Atsushi GOMI, Masamichi HARA, Toshiaki FUJISATO, Jacques FAGUET, Yasushi MIZUSAWA
  • Publication number: 20120247949
    Abstract: A film forming method includes depositing a metal thin film on a target substrate by generating an inductively coupled plasma in a processing chamber while introducing a plasma generating gas in the processing chamber with the substrate disposed on a placing table, by supplying DC power to a metal target from a DC power source, and by applying high-frequency bias to the placing table. A resputtering method includes resputtering the deposited metal thin film by stopping the generating of the inductively coupled plasma, by stopping the power supply from the DC power source, and by applying the high-frequency bias to the placing table while introducing the plasma generating gas in the processing chamber to form a capacitively coupled plasma in the processing chamber and by attracting ions of the plasma generating gas to the target substrate where the metal thin film is deposited.
    Type: Application
    Filed: March 29, 2012
    Publication date: October 4, 2012
    Inventors: Takashi SAKUMA, Tadahiro Ishizaka, Tatsuo Hatano, Shiro Hayashi, Toshiaki Fujisato, Hiroyuki Yokohara, Hiroyuki Toshima
  • Patent number: 8194384
    Abstract: An electrostatic chuck configured for high temperature reduced-pressure processing is described. The electrostatic chuck comprises a chuck body having an electrostatic clamp electrode and an optional heating element, and a heat sink body having a heat transfer surface spaced in close relationship with an inner surface of the chuck body, wherein the heat sink body is configured to remove heat from the chuck body due to the close proximity of the inner surface and the heat transfer surface. The electrostatic chuck further comprises a table assembly configured to support the chuck body and the heat sink body, and an expansion joint disposed between the chuck body and the table assembly, and configured to sealably join the chuck body to the table assembly while accommodating for differential thermal expansion of the chuck body and the table assembly.
    Type: Grant
    Filed: July 23, 2008
    Date of Patent: June 5, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Ronald Nasman, Rodney L. Robison, Toshiaki Fujisato
  • Publication number: 20100244350
    Abstract: A mounting table structure for mounting thereon an object to be processed to form a metal-containing thin film on the object includes a ceramic mounting table in which a chuck electrode and a heater are embedded, and a metal flange connected to a bottom surface of a peripheral portion of the mounting table. The mounting table structure further includes a metal base which is joined to the flange by screws and has a coolant path for flowing a coolant therein, and a metal seal member interposed between the flange and the base.
    Type: Application
    Filed: March 17, 2010
    Publication date: September 30, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toshiaki Fujisato, Ronald Nasman
  • Publication number: 20090242383
    Abstract: An IPVD source assembly and method is provided for supplying and ionizing material for coating a semiconductor wafer. The assembly includes a process space containing a plasma and an electrostatic chuck moveable in to and out of the process space. The chuck is configured to support the semiconductor wafer. The assembly further includes a first shield in electrical communication with a table and a second shield. The first shield is configured to shield at least a portion of the electrostatic chuck when the chuck is in the process space and the second shield is configured to shield at least a portion of a space below the electrostatic chuck and the process space. A conducting element electrically connects the second shield to the table to substantially prevent a formation of a second plasma in the space below the electrostatic chuck and the process space.
    Type: Application
    Filed: March 31, 2008
    Publication date: October 1, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Mirko Vukovic, James Grootegoed, Rodney L. Robison, Toshiaki Fujisato
  • Publication number: 20080087220
    Abstract: A susceptor (16) on which a predetermined target wafer (W) is mounted, and a support table (15) for supporting the susceptor (16) are provided at generally the center in a chamber (2). A process gas supply device (4) supplies a process gas for processing the wafer (W) into the chamber (2). A first high-frequency power source (5) and a second high-frequency power source (7) generate plasma of the supplied process gas by applying predetermined high-frequency voltages respectively, and process the wafer (W). A dike (18) having a grounded conductive member (18a) is provided around the support table (15) and the susceptor (16), and the generated plasma is thereby confined in the area above the wafer (W) mounted on the susceptor (16).
    Type: Application
    Filed: December 2, 2004
    Publication date: April 17, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Toshiaki Fujisato
  • Patent number: 7337745
    Abstract: A susceptor 24 includes a heater 38 disposed in a planar state, upper and lower ceramic-metal composites 40A and 40B disposed so as to sandwich the heater 38 from above and from below, and a ceramic electrostatic chuck 28 for attracting and holding an object to be treated, W. The electrostatic chuck is joined to an upper surface of the upper ceramic-metal composite 40A. The electrostatic chuck 28 has nearly the same coefficient of linear thermal expansion as that of the upper ceramic-metal composite 40A. Thus, peeling or cracking of the electrostatic chuck 28 due to the difference in thermal expansion and contraction between the electrostatic chuck 28 and the upper ceramic-metal composite 40A can be prevented.
    Type: Grant
    Filed: September 22, 2000
    Date of Patent: March 4, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Mitsuaki Komino, Hideaki Amano, Shosuke Endo, Toshiaki Fujisato, Yasuharu Sasaki
  • Publication number: 20070116872
    Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support and translate the substrate between a first position in the transfer space to a second position in the process space.
    Type: Application
    Filed: November 18, 2005
    Publication date: May 24, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yicheng Li, Tadahiro Ishizaka, Kaoru Yamamoto, Atsushi Gomi, Masamichi Hara, Toshiaki Fujisato, Jacques Faguet, Yasushi Mizusawa
  • Publication number: 20070116873
    Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space.
    Type: Application
    Filed: November 18, 2005
    Publication date: May 24, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yicheng Li, Tadahiro Ishizaka, Kaoru Yamamoto, Atsushi Gomi, Masamichi Hara, Toshiaki Fujisato, Jacques Faguet, Yasushi Mizusawa
  • Publication number: 20030141017
    Abstract: A plasma processing apparatus has a process chamber, an upper electrode, a susceptor which can elevate up and down and serves as a lower electrode and on which a work is placed, a feeder bar connected to an upper surface of the upper electrode and an insulating film formed on the feeder bar and the upper surface of the upper electrode, a bellows which is connected at one end to the susceptor and at the other end to a bottom portion of the process chamber and maintain the vacuum state inside the process chamber. The insulating film has a porous structure formed by thermal-spraying insulating material, e.g., PTFE toward the feeder bar and the upper electrode. The bellows is formed of high purity aluminum or nickel.
    Type: Application
    Filed: January 30, 2003
    Publication date: July 31, 2003
    Applicant: Tokyo Electron Limited
    Inventor: Toshiaki Fujisato
  • Publication number: 20030119328
    Abstract: There is provided a gas exhaustion pipe which is directly connected to a diffusion member which diffuses a process gas and is formed inside an upper electrode which serves as a shower head. A cleaning gas exhaustion line whose one end is constituted by the gas exhaustion pipe is connected to a gas exhaustion line which is connected to a gas exhaustion port and exhausts gas inside a chamber. A cleaning gas supplied from a cleaning gas line is exhausted from the chamber through the inside of the upper electrode.
    Type: Application
    Filed: December 26, 2002
    Publication date: June 26, 2003
    Applicant: Tokyo Electron Limited
    Inventor: Toshiaki Fujisato