Abstract: The invention provides a light receiving device having a single semiconductor substrate and a short-wavelength light receiving section. The single semiconductor substrate has regions of a first conductivity type and regions of a second (opposite) conductivity type alternately multiply laminated. Each of junction surfaces between the regions of the first conductivity type and the regions of the second conductivity type is formed to have a depth which enables converting light in a wavelength band, which is different from light in other wavelength bands converted by other junction surfaces, to electricity. The short-wavelength light receiving section is provided on or above the incident light surface of the semiconductor substrate and detects light having a wavelength shorter than the central wavelengths of all the respective wavelength bands converted by the junction surfaces. The invention further provides an image pickup device which uses an array of a plurality of the light receiving device.

Abstract: A light receiving device and an image pickup device in which a plurality of light receiving devices are arranged are provided. The light receiving device comprises a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part. The single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner. Depths of each of the junction surfaces between the regions of first conductivity type and second conductivity type are formed at depths such that light mainly in the blue or red wavelength regions can be photo-electrically converted. The respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.

Abstract: A photoelectric converting film stack type solid-state image pickup device comprising: a semiconductor substrate in which a signal read circuit is formed; and at least one photoelectric converting film interposed between two electrode films, said at least one photoelectric converting film being stacked above the semiconductor substrate, wherein a signal corresponding to an intensity of incident light is read outside by the signal read circuit, the signal being generated by photoelectric conversion with the photoelectric converting film, wherein the photoelectric converting film comprises: a first layer comprising: an ultrafine particle including (i) a quantum dot contributing to the photoelectric conversion and (ii) a material having a band gap larger than that of the quantum dot, the quantum dot being coated with the material; and a hole transport layer stacked on the first layer.

Abstract: An evaporation device for evaporating vapor deposition materials by heating is disclosed. The evaporation device includes deposition vessels each containing a different vapor deposition material, a heating unit for heating the vapor deposition materials contained in the deposition vessels, and a common opening area including a common opening, through which the vapor deposition materials evaporated in the deposition vessels exit together.

Abstract: A photoelectric converting film stack type solid-state image pickup device comprising: a semiconductor substrate in which a signal read circuit is formed; and at least one photoelectric converting film interposed between two electrode films, said at least one photoelectric converting film being stacked above the semiconductor substrate, wherein a signal corresponding to an intensity of incident light is read outside by the signal read circuit, the signal being generated by photoelectric conversion with the photoelectric converting film, wherein the photoelectric converting film comprises: a first layer comprising: an ultrafine particle including (i) a quantum dot contributing to the photoelectric conversion and (ii) a material having a band gap larger than that of the quantum dot, the quantum dot being coated with the material; and a hole transport layer stacked on the first layer.

Abstract: The liquid ejection head ejects droplets by causing an electrostatic force to act on a solution in which charged particles are dispersed. The head includes a solution guide mounted at a position corresponding to a through-hole on a first surface of an insulating head substrate on a through-hole substrate side and gradually narrowing toward a tip end portion, the tip end portion thereof passing through and protruding from the through-hole, a control electrode provided on the first surface of the head substrate so that a center thereof approximately coincides with the solution guide, a electrode drawing portion connected to the control electrode and passing through the head substrate and a wiring portion provided on a second surface being a back side of the head substrate and connecting to each other the electrode drawing portion and means for applying a voltage to the control electrode.

Abstract: The liquid ejection head ejects a solution, in which charged particles are dispersed, toward a counter electrode. The head has a head substrate, a solution guide member formed on a surface of the head substrate so as to protrude and include a sharp-pointed portion having a sharply pointed tip end, with the sharp-pointed portion being which is formed by inclined surfaces and having a cross section that is reduced as a distance to the tip end is decreased, and a solution supply path having a solution outflow opening through which the solution flows out to the neighborhood of the sharp-pointed portion so as to form a solution flow around the inclined surfaces. The solution flow is formed around the tip end of the sharp-pointed portion in a direction going across the inclined surface and a part of the solution flow is guided to the tip end and is ejected as a droplet by means of an electrostatic force.

Abstract: The liquid ejection head ejects a solution, in which charged particles are dispersed, toward a counter electrode. The head has a head substrate, a solution guide member formed on a surface of the head substrate so as to protrude and include a sharp-pointed portion having a sharply pointed tip end, with the sharp-pointed portion being which is formed by inclined surfaces and having a cross section that is reduced as a distance to the tip end is decreased, and a solution supply path having a solution outflow opening through which the solution flows out to the neighborhood of the sharp-pointed portion so as to form a solution flow around the inclined surfaces. The solution flow is formed around the tip end of the sharp-pointed portion in a direction going across the inclined surface and a part of the solution flow is guided to the tip end and is ejected as a droplet by means of an electrostatic force.

Abstract: The repellency increasing structure includes a substrate, if a surface of the substrate is flat, a flat surface of which shows lyophilic property with respect to a liquid having a surface tension lower than that of water and multiple recesses multiple and/or projections that are formed in the surface of the substrate. Inner walls of the recesses and outer walls of the projections are substantially parallel to a thickness direction of the substrate. The structure further includes a repellent layer that covers the recesses and the projections. In the liquid ejection head, a solution ejection surface around multiple through-holes of a ejection substrate corresponds to the surface of the substrate of the repellency increasing structure in which the recesses and/or the projections are formed. In the stain-resistant film, the substrate of the repellency increasing structure is a support film.

Abstract: In a solid-state imaging device including an on-chip microlens and a light-receiving part to receive incident light condensed by the on-chip microlens, an optical waveguide extending from an undersurface part of the microlens to the light-receiving part and for guiding the incident light condensed by the microlens to the light-receiving part is formed to be integrated with the microlens. By this, since the incident light condensed by the microlens is incident on the light-receiving part with little loss, the sensitivity is improved.

Abstract: The present invention provides a solid state image pickup device, including a silicon substrate and a photoelectric conversion unit which receives external incident light and generates signals in accordance therewith, and which is formed on or above the surface of the silicon substrate, wherein a signal transmission circuit for reading out the signals generated in the photoelectric conversion unit is formed on the silicon substrate; the photoelectric conversion unit includes a photoelectric conversion layer which has a laminated structure of plural compound semiconductor layers, which are different from each other in light wavelength to absorb and are provided with the laminated structure so that the shorter a light absorption wavelength of a compound semiconductor layer is, the closer to a light incident side the compound semiconductor layer resides; and the plural compound semiconductor layers are respectively connected to pixel electrodes formed on the signal transmission circuit.

Abstract: In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.

Abstract: A light receiving device and an image pickup device in which a plurality of light receiving devices are arranged are provided. The light receiving device comprises a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part. The single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner. Depths of each of the junction surfaces between the regions of first conductivity type and second conductivity type are formed at depths such that light mainly in the blue or red wavelength regions can be photo-electrically converted. The respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.

Abstract: The invention provides a light receiving device having a single semiconductor substrate and a short-wavelength light receiving section. The single semiconductor substrate has regions of a first conductivity type and regions of a second (opposite) conductivity type alternately multiply laminated. Each of junction surfaces between the regions of the first conductivity type and the regions of the second conductivity type is formed to have a depth which enables converting light in a wavelength band, which is different from light in other wavelength bands converted by other junction surfaces, to electricity. The short-wavelength light receiving section is provided on or above the incident light surface of the semiconductor substrate and detects light having a wavelength shorter than the central wavelengths of all the respective wavelength bands converted by the junction surfaces. The invention further provides an image pickup device which uses an array of a plurality of the light receiving device.

Abstract: A semiconductor laser device having an active region including alternating layers of at least one quantum well layer and a plurality of barrier layers, where two of the plurality of barrier layers are the outermost layers of the alternating layers. Each of the at least one quantum well layer has a compressive strain, and each of the plurality of barrier layers has a tensile strain. In the active region, a strain buffer layer having an intermediate strain is formed between each quantum well layer and each of two barrier layers adjacent to the quantum well layer. Interfacial strain is thus reduced, improving high-output-power characteristics.

Abstract: A photoelectric converting film stack type solid-state image pickup device comprising: a semiconductor substrate in which a signal read circuit is formed; and at least one photoelectric converting film interposed between two electrode films, said at least one photoelectric converting film being stacked above the semiconductor substrate, wherein a signal corresponding to an intensity of incident light is read outside by the signal read circuit, the signal being generated by photoelectric conversion with the photoelectric converting film, wherein the photoelectric converting film comprises: a first layer comprising: an ultrafine particle including (i) a quantum dot contributing to the photoelectric conversion and (ii) a material having a band gap larger than that of the quantum dot, the quantum dot being coated with the material; and a hole transport layer stacked on the first layer.

Abstract: A solid-state imaging device provided by stacking a photoelectric conversion element is provided with a semiconductor substrate having a signal readout circuit and a photoelectric conversion element stacked on the semiconductor substrate, an incident light is photoelectrically converted to a signal according to the light quantity by the photoelectric conversion element and read out by the signal readout circuit, and the photoelectric conversion element is composed of a first deposition layer comprising a p-conductive quantum dot and an i-conductive quantum dot, and a second deposition layer comprising an n-conductive quantum dot and an i-conductive quantum dot

Abstract: A color sensor comprises: light reception elements that generate color signals corresponding to stimulus values of colors in an RGB color system, the stimulus values of colors comprising a stimulus value of blue (B) and a stimulus value of red (R), wherein the light reception elements comprise a first light reception element that generates a red (R) color signal corresponding to the stimulus values of red (R); and a first portion that adds a signal corresponding to the stimulus value of blue (B) as a positive sensitivity component to one of: the first light reception element; and a red (R) color signal generated by the first light reception element.

Abstract: The liquid ejection head ejects droplets by causing an electrostatic force to act on a solution in which charged particles are dispersed. The head includes a solution guide mounted at a position corresponding to a through-hole on a first surface of an insulating head substrate on a through-hole substrate side and gradually narrowing toward a tip end portion, the tip end portion thereof passing through and protruding from the through-hole, a control electrode provided on the first surface of the head substrate so that a center thereof approximately coincides with the solution guide, a electrode drawing portion connected to the control electrode and passing through the head substrate and a wiring portion provided on a second surface being a back side of the head substrate and connecting to each other the electrode drawing portion and means for applying a voltage to the control electrode.

Abstract: An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.