Abstract: The disclosure is directed to a method for purifying metals, which can very efficiently and inexpensively eliminate impurity elements included in various metallic or semiconductor materials, or more specifically included in metallurgical grade silicon.

Abstract: The invention provides a method for purifying silicon which comprises a step of blowing a treating gas generated by reacting carbon with an oxidized gas into a molten silicon, as well as silicon produced by the method. Carbon can be held in a container, the oxidized gas can be passed through the container, and the oxidized gas can contain at least one of water vapor and hydrogen.

Abstract: In order to efficiently recycle a silicon scrap obtained by cutting a silicon chunk as a raw material silicon for solar batteries, a silicon recycling method of the present invention, according to one aspect, includes the steps of melting a silicon scrap by heating, and immersing a crystallization substrate in molten silicon and depositing silicon on a surface of the crystallization substrate. The step of separating silicon on the surface of the crystallization substrate from the crystallization substrate is preferably included. In addition, a silicon ingot obtained by melting the silicon raw material for solar batteries in a mold and solidifying the same is suitable as the silicon chunk.

Abstract: A method for purifying a metal, which includes: a first step of holding a first molten metal containing impurities in a first crucible; a second step of immersing a first cooling body in the first molten metal held in the first crucible while letting a cooling fluid flow in the interior of the cooling body to crystallize a first purified metal on a surface of the cooling body; a third step of taking out the first cooling body with the first purified metal crystallized thereon from the first molten metal; a fourth step of holding in a crucible a second molten metal having an impurity concentration less than that of the first molten metal of the first step; a fifth step of melting the first purified metal crystallized in the second step and holding the molten metal in a second crucible together with the second molten metal held in the fourth step; a sixth step of immersing a second cooling body in the second molten metal held in the fifth step while letting a cooling fluid flow in the interior of the cooling bo

Abstract: In order to provide silicon for solar batteries inexpensively by efficient refining and without lowering the refining rate, the present invention is directed to a method for refining molten silicon containing an impurity element. According to one aspect, the method includes the steps of: bringing a refine gas containing a component that reacts with the impurity element into contact with the molten silicone, thereby removing a product containing the impurity element from the molten silicon; and bringing a process gas, having small reactivity with the molten silicon, with the molten silicon, thereby removing a product generated by reaction of the molten silicon and the refine gas.

Abstract: The invention provides a method for purifying silicon which comprises a step of blowing a treating gas generated by reacting carbon (20, 21) with an oxidized gas into a molten silicon (8), as well as silicon produced by the method. Carbon (20, 21) can be held in a container (14), the oxidized gas can be passed through the container (14), and the oxidized gas can contain at least one of water vapor and hydrogen.

Abstract: Method capable of preparing silicon having purity of about 6N applied to a solar cell efficiently at a low cost. Raw silicon containing boron and a slag are melted and a shaft is rotated by a rotating/driving mechanism for stirring the molten silicon. The molten slag is dispersed in the molten silicon, thereby accelerating the boron removal reaction. It is further effective to use a slag containing at least 45 percent by mass of silicon oxide or to blow gas mixed with water vapor into the molten silicon for refining reaction.

Abstract: The liquid crystal display apparatus of this invention includes a pair of substrates facing each other and a liquid crystal layer interposed between the pair of substrates. At least one of the pair of substrates having on a surface thereof: pixel electrodes arranged in rows and columns; a plurality of signal lines; and a plurality of nonlinear switching elements for connecting each of the plurality of signal lines to a corresponding column of pixel electrodes. Each switching element has a lower electrode, an insulating film formed on the lower electrode, and an upper electrode formed on the insulating electrode, the lower electrode being a branch of the corresponding signal line, wherein the lower electrode has a first portion with a width larger than a width of a second portion overlapping the insulating film and the upper electrode, the first portion being located farther from the corresponding signal line than the second portion.

Abstract: The liquid crystal display device of the invention includes a pair of substrates and a liquid crystal layer sandwiched between the pair of substrates. A plurality of pixel electrodes is arranged in matrix on the surface facing the liquid crystal layer of at least one of the pair of substrates. A plurality of signal lines and a plurality of two-terminal nonlinear elements are formed. An individual one of the two-terminal nonlinear elements is connected to one of the pixel electrodes associated with the individual two-terminal nonlinear element and one of the signal lines associated with the individual two-terminal nonlinear element. The two-terminal nonlinear element includes: a lower electrode connected to the associated signal line, an insulator formed so as to cover the lower electrode, and an upper electrode connected to the associated pixel electrode.

Abstract: A reflective type liquid crystal display apparatus includes: a first transmissive substrate; a second substrate disposed to face the first substrate; a liquid crystal layer interposed between the first substrate and the second substrate, the liquid crystal layer including a plurality of pixels; a plurality of reflective pixel electrodes, provided on the second substrate, for applying driving voltages to the pixels; a plurality of driving devices, provided on the second substrate, for driving the reflective pixel electrodes, respectively; and a plurality of protective devices disposed in the vicinity of the driving devices on the second substrate. The driving devices and the protective devices are disposed below the reflective pixel electrodes.

Abstract: A two-terminal nonlinear device according to the present invention includes a lower electrode of a thin Ta film doped with nitrogen which is formed on a substrate, an anodized oxide film formed by anodizing a surface of the lower electrode, and an upper electrode of a metal thin film which is formed on the anodized oxide film, wherein the thin Ta film includes a structure in which first portions and second portions are alternately deposited, the first portions containing a different amount of nitrogen from that contained in the second portions.

Abstract: An active matrix substrate according to the present invention comprises an insulating substrate; a pixel electrode formed on the insulating substrate; a signal line for supplying a signal charge to the pixel electrode; a two-terminal nonlinear device including a lower electrode formed on the insulating substrate, an insulator covering the lower electrode, and an upper electrode formed on the insulator, the device changing a current which flows through the insulator in accordance with a voltage applied to the lower electrode and the upper electrode; and an island portion for connecting the upper electrode to the pixel electrode, the island portion making ohmic contact with each of the upper electrode and the pixel electrode.

Abstract: The invention increases the aperture ratio of a reflective type liquid crystal display device and raises the display quality. First conductor layers are formed in a band on a surface of a substrate, and insulator layers are formed on the surface thereof. Second conductor layers are formed on the insulator layers. The first conductor layers, insulator layers, and second conductor layers are so-called MIM elements and the first conductor layers are also signal wirings. The second conductor layers are also reflectors and pixel electrodes. Such substrate is disposed on substrate on which band-shaped counter electrodes are formed through a liquid crystal layer containing dichroic pigment or a high molecular resin layer dispersing liquid crystal.

Abstract: A two-terminal nonlinear device according to the present invention includes a lower electrode of a thin Ta film doped with nitrogen which is formed on a substrate, an anodized oxide film formed by anodizing a surface of the lower electrode, and an upper electrode of a metal thin film which is formed on the anodized oxide film, wherein the thin Ta film includes a structure in which first portions and second portions are alternately deposited, the first portions containing a different amount of nitrogen from that contained in the second portions.