Abstract: An asynchronous data transmitting apparatus includes data signal transmission lines; two control transmission lines having a minimum delay and maximum delay respectively; a transmitter; and a receiver. The transmitter includes a data transmitting unit that transmits a data signal through the data signal transmission lines, depending on a transmit clock; and control transmitting units that transmit control signals through the control transmission lines, depending on the transmit clock. The receiver includes a receive clock generator that generates a read clock from the control signals; and a data receiving unit that receives the data signal through the data signal transmission line, depending on the read clock.

Abstract: An asynchronous data transmitting apparatus includes data signal transmission lines; two control transmission lines having a minimum delay and maximum delay respectively; a transmitter; and a receiver. The transmitter includes a data transmitting unit that transmits a data signal through the data signal transmission lines, depending on a transmit clock; and control transmitting units that transmit control signals through the control transmission lines, depending on the transmit clock. The receiver includes a receive clock generator that generates a read clock from the control signals; and a data receiving unit that receives the data signal through the data signal transmission line, depending on the read clock.

Abstract: An asynchronous data transmitting apparatus includes data signal transmission lines; two control transmission lines having a minimum delay and maximum delay respectively; a transmitter; and a receiver. The transmitter includes a data transmitting unit that transmits a data signal through the data signal transmission lines, depending on a transmit clock; and control transmitting units that transmit control signals through the control transmission lines, depending on the transmit clock. The receiver includes a receive clock generator that generates a read clock from the control signals; and a data receiving unit that receives the data signal through the data signal transmission line, depending on the read clock.

Abstract: An asynchronous data transmitting apparatus includes data signal transmission lines; two control transmission lines having a minimum delay and maximum delay respectively; a transmitter; and a receiver. The transmitter includes a data transmitting unit that transmits a data signal through the data signal transmission lines, depending on a transmit clock; and control transmitting units that transmit control signals through the control transmission lines, depending on the transmit clock. The receiver includes a receive clock generator that generates a read clock from the control signals; and a data receiving unit that receives the data signal through the data signal transmission line, depending on the read clock.

Abstract: In an ECL circuit, when a potential of an input signal A changes from "L" to "H", an output signal D correspondingly changes from "H" to "L", and, at this time, an output sent from a switching stage circuit is supplied to a gate of a PMOS transistor via a control capacitor. Thereby, a base current of a pull-down transistor flows, and change of a potential of an output terminal node is promoted. An NMOS transistor receiving the potential of the output terminal node is arranged between a node and a VEE supply terminal. Therefore, when the potential changes, the current flowing through a transistor decreases, and the base current of the pull-down transistor further increases, so that the change of the output signal D is further promoted.

Abstract: The logic of an intermediate signal (Y.sub.1) goes high when an input signal (CI) makes an "L" to "H" transition, and then a transistor (Q.sub.1) turns on and a transistor (Q.sub.2) turns off. The input signal (CI) at a potential corresponding to the logic "H" at a CMOS level has been applied to the gate of an NMOS transisitor (N.sub.1), and the NMOS transistor (N.sub.1) turns on rapidly. At this time, only current flowing through the base of an output transistor (Q.sub.0) flows through parallel connection of a resistor (R.sub.2) and an on-resistance of the NMOS transistor (N.sub.1). Since the NMOS transistor (N.sub.1) is on, the base potential of the output transistor (Q.sub.0) is raised if the resistor (R.sub.2) has a high resistance, and current fed from the output transistor (Q.sub.0) increases, thereby raising the emitter potential of the output transistor (Q.sub.0). Then the logic of an output signal (EO) goes high. Power consumption of an output buffer circuit is reduced.

Abstract: Inter-circuit interference such as a switching noise is suppressed without deteriorating the circuit integration. An output buffer (1) is connected to power source lines (11) and (21) by though holes. In a similar manner, an output buffer (2) is connected to power source lines (11) and (21) and an output buffer (3) is connected to power source lines (22) and (12). The power source lines (21) and (22) are disposed on the same straight line and terminate in an area which is sandwiched by the output buffers (2) and (3). The power source lines (11) and (12) are disposed on the same straight line and terminate in an area which is sandwiched by the output buffers (2) and (3).

Abstract: First and second capacitor circuits responsive to a potential applied to an input node for instantaneously supplying a voltage derived by capacitance division to control electrodes of first and second output MOS transistors which drive an output node. When the output node reaches a predetermined potential level, the control electrode node of the first output transistor or the control electrode node of the second output transistor is driven to ground potential or power supply potential by the MOS transistor responding to a delay signal of an input signal. A smaller buffer circuit which has improved output response and reduced through current is described. The output signal transitioning speed can also be easily altered.

Abstract: An extension directed integrated circuit device having a learning function on a Boltzmann model, includes a plurality of synapse representing units arrayed in a matrix, a plurality of neuron representing units, a plurality of educator signal control circuits, and a plurality of buffer circuits. Each synapse representing unit is connected to a pair of axon signal transfer lines and a pair of dendrite signal transfer lines. Each synapse representing unit includes a learning control circuit which derives synapse load change value data in accordance with predetermined learning rules in response to a first axon signal Si and a second axon signal Sj, a synapse load representing circuit which corrects a synapse load in response to the synapse load change valued data and holds the corrected synapse load value Wij, a first synapse coupling operating circuit which derives a current signal indicating a product Wij.multidot.

Abstract: A level conversion apparatus for converting a signal of an ECL level into a signal of a TTL level is disclosed which has source voltages set to a potential corresponding to a lower limit logic swing of the ECL level and a potential corresponding to an upper limit logic swing of the TTL level. This level conversion apparatus includes a reference voltage generating circuit for generating an upper limit reference voltage and a lower limit reference voltage divided from a voltage applied between a source terminal Vcc and a ground terminal, a control signal generating circuit for generating a control signal in response to the ECL level signal, determined by a difference between the upper limit reference voltage and the lower limit reference voltage, and an output switching circuit for carrying out a switching operation in response to the controlled signal. The output switching circuit outputs a signal determined by the potential corresponding to the upper limit logic swing of the TTL level and a ground source.

Abstract: A signal applied through a signal input terminal is logically processed by a logic circuit such as a CMOS inverter and the processed signal is supplied from the signal output terminal. A pinch resistor has a resistance value controlled in accordance with a variation of a voltage at the signal output terminal. Specifically, the pinch resistor has a higher resistance value at an initial stage in the switching operation in which an output from the logic circuit lowers from a logical high level to a logical low level, and supplies a large base current to a bipolar transistor. At a later stage in the switching operation, the pinch resistor has a small resistance value, so that a residual charge in the signal output terminal and a base charge in the bipolar transistor are rapidly emitted through the pinch resistor. Thus, the resistance value of the pinch resistor is always maintained at an optimum value, which increases a speed of the switching operation of the logic circuit.

Abstract: An extension directed integrated circuit device having a learning function on a Boltzmann model, includes a plurality of synapse representing units arrayed in a matrix to form a rectangle including a first and second triangles on a semiconductor chip, a plurality of neuron representing units and a plurality of educator signal control circuits which are arranged along first and second sides of the rectangle, and a plurality of buffer circuits arranged along third and fourth sides of the rectangle. The first side is opposite to the third side, and the second side is opposite to the fourth side. Axon signal transfer lines and dendrite signal lines are so arranged that the neuron representing units are full-connected in each of the first right triangle the second right triangle. Alternatively, axon signal lines and dendrite signal ines are arranged in parallel with rows and columns of the synapse representing unit matrix, so that the neuron representing units are full-connected in the rectangle.

Abstract: A Bi-CMOS gate array comprises basic cells combining CMOS transistors and bipolar transistors. The basic cell is formed of a region for forming p-MOS transistors, a region for forming n-MOS transistors and a region for forming bipolar transistors. The region for forming p-MOS transistors comprises gates aligned spaced apart from each other in a first direction and p-type source and drain regions formed spaced apart from each other in the first direction so as to be disposed at the opposite sides of each gate and having a predetermined width. The region for forming n-MOS transistors comprises gates formed spaced apart from each other in the first direction and n-type source and drain regions formed spaced apart from each other in the first direction so as to be disposed at the opposite sides of each gate and having a predetermined width.

Abstract: An internal logic gate portion (3) is provided in the central portion of a semiconductor chip (1), input/output buffers (4) are provided to surround the internal logic gate portion (3), and bonding pads (2) are provided in the peripheral portions of the semiconductor chip (1) corresponding to input/output buffer cells (5) in the input/output buffer. Each of the input/output buffer cells (5) comprises an output P-MOS portion (6), an output N-MOS portion (7), an input/logic P-MOS portion (8) and an input/logic N-MOS portion (9), which are respectively arranged in a single line in the direction from the bonding pads (2) to the internal logic gate portion (3). In the above described structure, the size of each of the input/output buffer cells (5) in the pad arranging direction of the bonding pads (2) is decreased, so that the number of input/output pins can be increased according to the decreased use of space in the pad arranging direction required by each input/output buffer cell (5).

Abstract: An inverter circuit (I.sub.3) is disclosed which includes a P-channel MOSFET (3) and a N-channel MOSFET (4) connected in series between a power supply (V.sub.DD) and a ground (GND). The inverter circuit further includes a P-channel MOSFET (5) and a N-channel MOSFET (6) connected in parallel between the gates of the FETs (3) and (4). The FETs (3) and (4) have their gates connected to receive testing mode signals (T.sub.E). In a testing mode operation, the FET (6) is rendered conductive to allow an input signal to be applied to the gate of the FET (4) through the FET (6). The FET (4), having an on-resistance lower than the FET (3), is driven into conduction in response to the output signal applied through the FET (6), thereby providing a slowly rising output signal. The slow rising output signal is free from undershoot or ringing.

Abstract: A semiconductor integrated circuit includes cascaded asynchronous sequential logic circuits. Scanning shift registers are provided between the asynchronous sequential circuits to permit test data to be applied to the inputs of the circuits and to latch and shift out output data provided by the circuits in response to the test data. Additional gating circuitry is provided between the scanning shift registers and the inputs of the asynchronous sequential circuits to prevent new data latched into the scanning shift register from causing the asynchronous sequential circuit connected to the scanning shift register output from changing state during testing. This same additional circuitry may be used to provide pulses of controlled width and/or timing to asynchronous sequential circuit inputs in response to externally generated gating control signals.

Abstract: A test circuit of a semiconductor integrated circuit apparatus comprising a latch circuit connected to an output terminal of a scan register for holding output data of the scan register stored before scanning in a scan mode during the test operation.

Abstract: A semiconductor logic integrated circuit device comprising a signal selection means and a storing means, which is capable of adjusting the logic levels of an output signal therefrom. With such a circuit device, the signal selection means and the storing means are controlled in normal operation mode so that a parallel input signal is allowed to be output as a parallel output signal from output terminals of the circuit device after subjecting the parallel input signal to logical signal processing. On the other hand, the signal selection means and the storing means are controlled in a testing opertion mode so that the parallel input signal are output in serial mode from a serial signal output terminal of the circuit device, and a serial input signal to the signal selection means is allowed to be stored in the storing means to adjust the logic levels of the output signal from the circuit device at desired levels voluntarily.

Abstract: A semiconductor integrated circuit device includes a plurality of latch circuits which are provided between adjacent circuit blocks. Each latch circuit functions to transfer output data from a preceding circuit block directly to a subsequent circuit block during a normal operation of the circuit device, to hold the output data until a scanning of associated scan register and supply them to the subsequent circuit block in a scan mode of a test operation and to hole the output data while outputting them in synchronism with an external clock in a test mode of the test operation.