Patents by Inventor Toshiaki Iijima

Toshiaki Iijima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD AND SYSTEM FOR DEPOSITING SILICON NITRIDE WITH INTERMEDIATE TREATMENT PROCESS
    Publication number: 20220319832
    Abstract: Methods of depositing silicon nitride on a surface of a substrate are disclosed. The methods include using an intermediate treatment process to increase a quality of the silicon nitride layer and a second treatment process.
    Type: Application
    Filed: March 25, 2022
    Publication date: October 6, 2022
    Inventor: Toshiaki Iijima
  • Method for manufacturing semiconductor device with helium-containing gas
    Patent number: 11037780
    Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: June 15, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Toshiaki Iijima, Masaki Tokunaga, Jun Kawahara
  • FILM FORMING METHOD
    Publication number: 20200075325
    Abstract: Examples of a film forming method include placing a substrate on a susceptor arranged in a chamber, and introducing a hydrogen-containing gas and a nitrogen gas into the chamber, and applying radio frequency power to an electrode above the susceptor to generate plasma, and form a nitride film on the substrate, wherein a flow rate of the hydrogen-containing gas is equal to 1% or less of a flow rate of the nitrogen gas.
    Type: Application
    Filed: August 29, 2018
    Publication date: March 5, 2020
    Applicant: ASM IP Holding B.V.
    Inventors: Toshiaki IIJIMA, Jun KAWAHARA
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20190181002
    Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.
    Type: Application
    Filed: December 12, 2017
    Publication date: June 13, 2019
    Applicant: ASM IP Holding B.V.
    Inventors: Toshiaki Iijima, Masaki Tokunaga, Jun Kawahara