Abstract: A microscope includes an objective optical system including an imaging optical system configured to form an image of an object, a re-imaging optical system configured to re-form an image of the object image formed by the imaging optical system, and a reflection unit arranged on an optical path between the imaging optical system and the re-imaging optical system and configured to be locally changeable in at least one of a position thereof in an optical axis direction and an inclination thereof relative to an optical axis, and an image sensor configured to capture the image re-formed by the objective optical system.

Abstract: Solid phase reaction products are employed as reflecting planes of a semiconductor laser facing each other with an active layer in between, which significantly improve its performance and productivity.

Abstract: A voltage-control type semiconductor switching device is disclosed which includes a pair of controlled electrodes to which a control voltage signal is supplied, and a semiconductive layer formed between the electrodes so as electrically insulative from the electrodes through insulative layers. The semiconductive layer has a channel region and a carrier-storage region which is substantially nonconductive. The channel region is formed laterally along the longitudinal direction of the electrodes, thereby allowing majority carriers such as electrons of the semiconductive layer to flow in the lateral direction. In the current cut-off mode, the carrier-storage region temporarily stores the carriers which move in the direction of thickness of the semiconductive layer due to the electric field created by the voltage. In the current conduction mode, the carrier-storage region releases the carriers stored therein toward the channel region.

Abstract: The exposed surface of a semi-insulating compound semiconductor substrate is anodized while light is irradiated to the exposed surface to form a gate insulating film on the substrate between source and drain regions.

Abstract: A method for manufacturing compound semiconductor devices includes a step of forming a first oxidized film on a GaAs body and heating it at a high temperature. A second oxidized film is thereafter formed on the body which includes the first oxidized film so as to change it properties, for example, to be easily etched with an etchant.