Abstract: A measuring method of the contact resistance of a probe includes bringing a plurality of probes including a first and second probes into contact with a plurality of electrode pads that is disposed on a semiconductor device to be electrically tested and connected each other with a conductive wiring; connecting a power supply to at least one predetermined first probe of the plurality of probes and supplying a current or a voltage from the first probe through the electrode pad and the wiring to the second probe to the semiconductor device; measuring the contact resistance between the electrode pad and the probe based on the current or the voltage supplied to the semiconductor device; judging whether the measured contact resistance is equal to or more than a predetermined value or not; and when the contact resistance is equal to or more than the predetermined value, the probes are cleansed.

Abstract: A measuring method of the contact resistance of a probe includes bringing a plurality of probes including a first and second probes into contact with a plurality of electrode pads that is disposed on a semiconductor device to be electrically tested and connected each other with a conductive wiring; connecting a power supply to at least one predetermined first probe of the plurality of probes and supplying a current or a voltage from the first probe through the electrode pad and the wiring to the second probe to the semiconductor device; measuring the contact resistance between the electrode pad and the probe based on the current or the voltage supplied to the semiconductor device; judging whether the measured contact resistance is equal to or more than a predetermined value or not; and when the contact resistance is equal to or more than the predetermined value, the probes are cleansed.

Abstract: A card jacket capable of closely holding a card therein has a front wall formed from a front film, and a back wall formed from a back film, and has three sealed sides and one open side. The front film is a composite film including a reinforcing film, a background-color layer formed on one surface of the reinforcing film to color the reinforcing film in a background color, and a transparent surface film laminated to the background-color layer. The transparent surface film is embossed with an embossed pattern.

Abstract: A substrate for a probe card for use in testing semiconductor IC devices in a lump includes tester power supply terminals which receive a power supply voltage output from a tester. Power supply terminals are connected to a semiconductor IC device to be tested. At least two power supply layers each connect one of the tester power supply terminals to the power supply terminals.

Abstract: A measuring method of the contact resistance of a probe includes bringing a plurality of probes including a first and second probes into contact with a plurality of electrode pads that is disposed on a semiconductor device to be electrically tested and connected each other with a conductive wiring; connecting a power supply to at least one predetermined first probe of the plurality of probes and supplying a current or a voltage from the first probe through the electrode pad and the wiring to the second probe to the semiconductor device; measuring the contact resistance between the electrode pad and the probe based on the current or the voltage supplied to the semiconductor device; judging whether the measured contact resistance is equal to or more than a predetermined value or not; and when the contact resistance is equal to or more than the predetermined value, the probes are cleansed.

Abstract: There are provided a method and an apparatus for displaying test results and a recording medium, which allow easy detection of DUT's in which probes are destroyed. The apparatus has two wafer probers, a work station, and a PC. On the basis of a display program and a display mode switching program stored in a ROM of the work station, respective test results of testing semiconductor chips by the two wafer probers are displayed on a CRT of the PC in correspondence to positions of the semiconductor chips on a wafer substrate, and, at the same time, a pass/fail ratio for each of the DUT's is displayed in parallel with the test results of the semiconductor chips.

Abstract: There are provided a method and an apparatus for displaying test results and a recording medium, which allow easy detection of Devices for Testing in which probes are destroyed. The apparatus has two wafer probers, a work station, and a PC. On the basis of a display program and a display mode switching program stored in a ROM of the work station, respective test results of testing semiconductor chips by the two wafer probers are displayed on a CRT of the PC in correspondence to positions of the semiconductor chips on a wafer substrate, and, at the same time, a pass/ fail ratio for each of the DFT's is displayed in parallel with the test results of the semiconductor chips.

Abstract: A substrate for a probe card for use in testing semiconductor IC devices in a lump includes tester power supply terminals which receive a power supply voltage output from a tester. Power supply terminals are connected to a semiconductor IC device to be tested. At least two power supply layers each connect one of the tester power supply terminals to the power supply terminals.

Abstract: An analysis system which permits sample pretreatment which comprises: a sample rack; a sample container supply, a sample dispenser, a solvent-removing evaporator, a solvent dispenser for dispensing a second solvent, a sample-stirring means, a sample aspirating-and-transferring means, a sample recovery means, a sample container recovery means, and a control means for controlling the aforementioned various means.

Abstract: A parallel processing system and method for performing processing tasks in parallel on a plurality of processors breaks down a processing task into a plurality of self-contained task objects, each of which has one or more “data-waiting” slots for receiving a respective data input required for performing a computational step. The task objects are maintained in a “waiting” state while awaiting one or more inputs to fill its slots. When all slots are filled, the task object is placed in an “active” state and can be performed on a processor without waiting for any other input. The “active” tasks objects are placed in a queue and assigned to a next available processor. The status of the task object is changed to a “dead” state when the computation has been completed, and dead task objects are removed from memory at periodic intervals.

Abstract: Image sensors for use in facsimile machines and the like are formed in which an insulating film is interposed between the semiconductor film and the individual electrode contacts. When the image sensor is of the type having individual electrodes on the surface of an insulating substrate, and a common electrode on a surface of the semiconductor film away from the substrate, the insulating film is formed such that an opening exists over a consistent portion of each individual electrode through which the photoelectric conversion semiconductor film makes contact with the individual electrodes. The interposition of the insulating film keeps the semiconductor film from coming in contact directly with the insulating substrate, thus no impurity can diffuse from the substrate to the semiconductor film.

Abstract: A line scanner compries a conductive film which has been patterned to define a plurality of electrodes, each with an attached lead, is covered with a layer of photosensitive a-silicon and the silicon in turn is covered with an insulating resin. The insulating film is patterned to open a linear window which exposes equal amounts of each electrode and attached lead and a common electrode overlies the resin and contacts the electrodes and leads through the window.

Abstract: An image sensor of the kind which employs a line array of a-Si photodiodes on an insulating substrate and in which the outputs of the diodes are stored in the lead capacitances until readout. To increase the size of the lead capacitance and thereby to improve the linearity of the ouput, the lead between each diode and its processing circuit is made one plate of a capacitor, of which the other plate is a metal film insulated from the lead and advantageously maintained at ground.

Abstract: The invention provides a contact image sensor in which a common electrode is provided so as to oppose a plurality of individual electrodes arranged on a substrate across a photoconductive semiconductor film, characterized in that each of the individual electrodes is in contact with the semiconductor film through a window provided at a predetermined position in an insulating film. The insulating film can be made of a photosensitive resin, in which case the windows are formed by light exposure and development. Preferably, the insulating film is baked at an elevated temperature to purge impurities therefrom. The invention also provides image sensors in which the common electrode layer is made of an electrically conductive resin.

Abstract: A contact-type image sensor comprises a layer of photoelectric material on one of whose surfaces are formed a linear array of discrete electrodes and on the other of whose surfaces are formed at least two common electrodes each of which has portions which are opposite a different limited portion of each of the discrete electrodes whereby the number of picture elements may be at least doubled when the two common electrodes are operated in turn as the discrete electrodes are successively switched on for readout.

Abstract: An image sensor includes a layer of photosensitive amorphous silicon on one surface of which is a large area common electrode and on the opposite surface of which are an array of spaced discrete electrodes and an isolation electrode which intends in the spaces between the discrete electrodes but is spaced therefrom. In operation, the common electrode is maintained at a first d-c potential, the isolation electrode is maintained at a different second d-c potential and the discrete electrodes are switched in turn to the second potential and the current flowing therethrough is used.

Abstract: A surface roughening method, preferably for a substrate of a solar cell, comprising coating the substrate with a photoresist material having light-shielding particles mixed therein, exposing and developing the photoresist coating and then etching the substrate with a suitable etchant.

Abstract: A silver-silver chloride skin electrode is prepared by coating a composition containing silver grain, silver chloride grain and glass frit on a substrate made of a spinel type crystalline oxide such as ferrite and sintering the coated layer. The electrode is durable to an electroconductive paste.

Abstract: In a skin electrode for connecting monitoring equipment to the surface of the skin which is separable into two assemblies: a base assembly adapted to be mounted to the surface of the skin and having a sensing element, and; a terminal assembly adapted to be releasably coupled with the base assembly and having a lead for connection to the monitoring equipment, an improvement wherein the terminal assembly is provided with a magnet while the base assembly is provided with a ferromagnetic element, whereby the releasable coupling and electrical connection of the assemblies may be ensured by the action of the magnet.

Abstract: An improved electrode for living body is proposed which is excellent in the stability and reliability in detecting and transmitting the electric signals generated in a living body by the physiological electric phenomena such as electrocardiographic, electromyographic and electroencephalographic signals.The electrode of the invention is characterized by the material which is mainly a titanium hydride or a mixture of a titanium hydride with silver chloride optionally combined with a metal salt with basicity and a carbon powder, e.g. graphite.