Abstract: An information notification device includes a longitudinal-data storage unit that accumulates, for a plurality of samples, longitudinal data indicating a temporal change in foot size of one sample, a user-data storage unit that stores user data containing a gender, an age, and a past foot size of a prediction target person, a foot-size prediction unit that predicts, based on a current foot size of the prediction target person and the longitudinal data, a change in foot size of the prediction target person in a period from a current point in time to a future point in time, and a notification processing unit that displays, on a display unit, the prediction of the change in foot size of the prediction target person in the period from the current point in time to the future point in time.

Abstract: Deterioration in transient response characteristics of a current sensor may cause overshoot or delay. Thus, it is difficult to achieve good transient response characteristics of a magnetic field. A current sensor is provided, including: a detection unit outputting a signal corresponding to a magnetic field generated by detection current flowing through a current path; a reception unit receiving the signal corresponding to the magnetic field; a filter unit filtering the signal received by the reception unit; and an output unit outputting an output signal indicating the detection current according to the filtered signal, wherein detection gain, as gain of magnetic flux density detected by the detection unit, has a gain fluctuation band that changes with an increase in a frequency of the detection current, and the filter unit has gain that cancels out the change in the detection gain in at least a part of the gain fluctuation band.

Abstract: Deterioration in transient response characteristics of a current sensor may cause overshoot or delay. Thus, it is difficult to achieve good transient response characteristics of a magnetic field. A current sensor is provided, including: a detection unit outputting a signal corresponding to a magnetic field generated by detection current flowing through a current path; a reception unit receiving the signal corresponding to the magnetic field; a filter unit filtering the signal received by the reception unit; and an output unit outputting an output signal indicating the detection current according to the filtered signal, wherein detection gain, as gain of magnetic flux density detected by the detection unit, has a gain fluctuation band that changes with an increase in a frequency of the detection current, and the filter unit has gain that cancels out the change in the detection gain in at least a part of the gain fluctuation band.

Abstract: A semiconductor memory device includes a non-volatile device array of once rewritable non-volatile devices arranged in a matrix. The device includes a plurality of non-volatile device sub-arrays formed by dividing the non-volatile device array; a power interconnect contact region provided between at least one of pairs of the plurality of non-volatile device sub-arrays, and connected to a power interconnect provided at an upper layer of the non-volatile device array; and an ESD protection circuit located in the power interconnect contact region between ground and a power source for the non-volatile devices.

Abstract: A semiconductor memory device includes a nonvolatile device array including write-once nonvolatile devices arranged in rows and columns, row select lines, a row control circuit connected to the row select lines, column select lines, a column control circuit connected to the column select lines, a flip-flop circuit provided at least on a side of the nonvolatile device array opposite to the row control circuit or on a side of the nonvolatile device array opposite to the column control circuit, and an inactivation unit configured to inactivate the row select lines or the column select lines based on a first control signal.

Abstract: A semiconductor device includes an electric fuse circuit and a program protective circuit. The electric fuse circuit includes a fuse element and a transistor connected together in series and placed between a program power supply and a grounding, and controlling sections. The program protective circuit is placed in parallel with the electric fuse circuit and between the program power supply and the grounding. When a surge voltage is applied between the program power supply and the grounding, the foregoing structure allows a part of a surge electric current can flow through the program protective circuit.

Abstract: A semiconductor device includes an electric fuse circuit and a program protective circuit. The electric fuse circuit includes a fuse element and a transistor connected together in series and placed between a program power supply and a grounding, and controlling sections. The program protective circuit is placed in parallel with the electric fuse circuit and between the program power supply and the grounding. When a surge voltage is applied between the program power supply and the grounding, the foregoing structure allows a part of a surge electric current can flow through the program protective circuit.

Abstract: A semiconductor device includes an MIS transistor and an electric fuse. The MIS transistor includes a gate insulating film formed on the semiconductor substrate, and a gate electrode including a first polysilicon layer, a first silicide layer, and a first metal containing layer made of a metal or a conductive metallic compound. The electric fuse includes an insulating film formed on the semiconductor substrate, a second polysilicon layer formed over the insulating film, and a second silicide layer formed on the second polysilicon layer.

Abstract: In a nonvolatile semiconductor memory device storing data by accumulating charges in a floating gate, memory units, each of which includes a first MOS transistor as a read device, a bit cell composed of a first capacitor as a capacitance coupling device and a second capacitor as an erase device, and a decode device including a second MOS transistor and a third MOS transistor, are arranged in array. This attains nonvolatile memory capable of bit by bit selective erase arranged in array to thus reduce the core area remarkably.

Abstract: A system LSI includes an input/output section and a logic circuit section. The input/output section includes an I/O power source cell having a supply voltage higher than a power source for the logic circuit section and a plurality of I/O cells in each of which an I/O power source line is provided for supplying source power from the I/O power source cell. The logic circuit section includes an I/O power consuming circuit which uses the I/O power source cell as a power source. The I/O power consuming circuit is connected to a line leading from an I/O power source line in at least one of the plurality of I/O cells.

Abstract: In a nonvolatile semiconductor memory device storing data by accumulating charges in a floating gate, memory units, each of which includes a first MOS transistor as a read device, a bit cell composed of a first capacitor as a capacitance coupling device and a second capacitor as an erase device, and a decode device including a second MOS transistor and a third MOS transistor, are arranged in array. This attains nonvolatile memory capable of bit by bit selective erase arranged in array to thus reduce the core area remarkably.

Abstract: A first transistor is connected in series with one end of a fuse element. A second transistor is connected in series with the other end of the fuse element. A current flows through the fuse element when both the first and second transistors are turned on.

Abstract: A gate of a MOS transistor connected to a fuse device in series is controlled by an AND circuit connected to the same power source as the fuse device is connected, thereby pulling down one input of the AND circuit to a ground. Thus, misprogramming of the fuse device when an LSI power source is turned ON/OFF can be prevented.

Abstract: In a nonvolatile semiconductor memory device storing data by accumulating charges in a floating gate, memory units, each of which includes a first MOS transistor as a read device, a bit cell composed of a first capacitor as a capacitance coupling device and a second capacitor as an erase device, and a decode device including a second MOS transistor and a third MOS transistor, are arranged in array. This attains nonvolatile memory capable of bit by bit selective erase arranged in array to thus reduce the core area remarkably.

Abstract: A system LSI includes an input/output section and a logic circuit section. The input/output section includes an I/O power source cell having a supply voltage higher than a power source for the logic circuit section and a plurality of I/O cells in each of which an I/O power source line is provided for supplying source power from the I/O power source cell. The logic circuit section includes an I/O power consuming circuit which uses the I/O power source cell as a power source. The I/O power consuming circuit is connected to a line leading from an I/O power source line in at least one of the plurality of I/O cells.

Abstract: A system LSI includes an input/output section and a logic circuit section. The input/output section includes an I/O power source cell having a supply voltage higher than a power source for the logic circuit section and a plurality of I/O cells in each of which an I/O power source line is provided for supplying source power from the I/O power source cell. The logic circuit section includes an I/O power consuming circuit which uses the I/O power source cell as a power source. The I/O power consuming circuit is connected to a line leading from an I/O power source line in at least one of the plurality of I/O cells.

Abstract: A nonvolatile semiconductor memory device for storing data by accumulating charge in a floating gate includes a plurality of MOS transistors sharing the floating gate. In the device, a PMOS is used for coupling during writing and an n-type depletion MOS (DMOS) is used for coupling during erasure. Coupling of channel inversion capacitance by the PMOS is used for writing and coupling of depletion capacitance by the n-type DMOS is used for erasure, thereby increasing the erase speed without increase of area, as compared to a conventional three-transistor nonvolatile memory element.

Abstract: The invention provides an electrical fuse device comprising: a plurality of fuse cores, each having an electrical fuse element and a switching element serially connected to the electrical fuse element; a program control circuit generating a program shift signal by sequentially shifting a program control transmission signal in synchronization with an effective program clock signal and subsequently generating a program signal to be sent to each of the switching elements in the plurality of fuse cores based on program data and the program shift signal; and a program clock control circuit controlling the conducting and non-conducting states of a program clock signal in accordance with a program clock enable signal and, when the program clock signal is in a conducting state, transmitting the program clock signal to the program control circuit as the effective program clock signal.

Abstract: A circuit includes a plurality of stages each including a MOS transistor and a capacitor of which one end is connected to one of a drain and a source of the MOS transistor. The plurality of stages are connected with each other by cascade connection of the MOS transistors. A gate of the MOS transistor is connected electrically to one of the drain and the source thereof in each stage, and a substrate for at least one pair of adjacent MOS transistors are connected electrically to one of the drain and the source of one of the pair. The back bias effect is suppressed, and the layout area is reduced. Further, a plurality of booster capacitors connected in series are provided in succeeding stages, thereby suppressing degradation of breakdown voltage of each capacitor.

Abstract: An electrical fuse circuit includes, in addition to an independent power supply switch circuit, a plurality of fuse bit cells, each including a fuse element one end of which is connected to an output of the power supply switch circuit, and a first MOS transistor connected to the other end of the fuse element, wherein a diode is connected between the ground potential and the power supply switch circuit as an ESD countermeasure. The gate oxide film thickness of transistors of the fuse bit cells is equal to that of a low-voltage logic-type transistor, not that of a high-voltage I/O-type transistor.