Patents by Inventor Toshiaki Matsui
Toshiaki Matsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190256538Abstract: By providing a novel polycyclic aromatic compound in which a plurality of aromatic rings is linked via a nitrogen atom, a boron atom, or the like, options of a material for an organic EL element are increased. In addition, by using the novel polycyclic aromatic compound as a material for an organic electroluminescent element, an excellent organic EL element is provided.Type: ApplicationFiled: August 25, 2017Publication date: August 22, 2019Applicants: Kwansei Gakuin Educational Foundation, JNC CorporationInventors: Takuji HATAKEYAMA, Kohei MATSUI, Yusuke WATANABE, Daisuke BABA, Yasuyuki SASADA, Motoki YANAI, Toshiaki IKUTA
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Publication number: 20190242008Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.Type: ApplicationFiled: July 12, 2017Publication date: August 8, 2019Inventors: Yoshiyuki SUDA, Takahiro TSUKAMOTO, Akira MOTOHASHI, Kyohei DEGURA, Katsumi OKUBO, Takuma YAGI, Akifumi KASAMATSU, Nobumitsu HIROSE, Toshiaki MATSUI
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Patent number: 10347068Abstract: A capacitance detection device includes a first electrode and a second electrode that at least partially face each other on opposite sides of a transfer path. An oscillator circuit forms an electric field between the first electrode and the second electrode. A detection circuit detects a change in capacitance between the first electrode and the second electrode. At least one of the oscillator circuit and the detection circuit is included in each of a first board and a second board. The first board is disposed such that a side surface of the first board faces the first electrode in an electric field direction, and the second board is disposed such that a side surface of the second board faces the second electrode in the electric field direction.Type: GrantFiled: September 25, 2017Date of Patent: July 9, 2019Assignee: Mitsubishi Electric CorporationInventors: Miki Kagano, Hiroshi Araki, Toshiaki Shoji, Hideki Matsui, Kazuya Makabe, Tomoyuki Miyata, Tomokazu Ogomi
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Publication number: 20190139349Abstract: A capacitance detection device includes a first electrode and a second electrode that at least partially face each other on opposite sides of a transfer path. An oscillator circuit forms an electric field between the first electrode and the second electrode. A detection circuit detects a change in capacitance between the first electrode and the second electrode. At least one of the oscillator circuit and the detection circuit is included in each of a first board and a second board. The first board is disposed such that a side surface of the first board faces the first electrode in an electric field direction, and the second board is disposed such that a side surface of the second board faces the second electrode in the electric field direction.Type: ApplicationFiled: September 25, 2017Publication date: May 9, 2019Applicant: Mitsubishi Electric CorporationInventors: Miki KAGANO, Hiroshi ARAKI, Toshiaki SHOJI, Hideki MATSUI, Kazuya MAKABE, Tomoyuki MIYATA, Tomokazu OGOMI
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Publication number: 20160252152Abstract: The damper device is equipped with: a cylinder unit having a sliding inner wall surface; a piston unit, having a piston head, which has an outer diameter part that slides on the sliding inner wall surface of the cylinder unit, and divides the interior space of the cylinder unit into a first gas chamber and a second gas chamber, a rod extending from the second gas chamber side of the piston head, and a closed-end hole which opens toward the first air chamber side of the piston head and extends through the interior of the rod in the direction of the second air chamber; and a guide shaft affixed to the first gas chamber side of the cylinder unit and equipped with a tip part having an outer circumferential surface that slides on the inner wall surface of the closed-end hole of the piston unit.Type: ApplicationFiled: October 20, 2014Publication date: September 1, 2016Applicants: Pneumatic Servo Controls Ltd., Nippon Steel & Sumitomo Metal CorporationInventors: Katsumi Sasaki, Osamu Goto, Toshiaki Matsui
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Patent number: 8922424Abstract: A radiation type oscillator including a radiation type oscillator substrate including a microwave transistor for generating negative resistance by short-duration operation and a resonant cavity structure; a high-frequency pulse signal of an oscillation frequency/frequency bandwidth determined by negative resistance produced by the short-duration operation of the microwave transistor and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space. The radiation type oscillator performs oscillating operation when a received RF signal that is a reflected wave of the transmitted RF signal from an object of detection enters the radiation type oscillator, an IF signal is acquired from an IF signal output terminal owing to homodyne mixing by the radiation type oscillator itself, and this is analyzed and processed to detect the object of detection.Type: GrantFiled: October 6, 2009Date of Patent: December 30, 2014Assignees: National Institute of Information and Communications Technology, Communications Research Laboratory, Inc.Inventors: Hitoshi Utagawa, Toshiaki Matsui
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Patent number: 8847817Abstract: To provide a microwave/milliwave band high-frequency pulse signal generating device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.Type: GrantFiled: October 6, 2009Date of Patent: September 30, 2014Assignees: National Institute of Information and Communication Technology, Communications Research Laboratory, Inc.Inventors: Hitoshi Utagawa, Toshiaki Matsui
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Patent number: 8705652Abstract: To provide a microwave/milliwave UWB pulse wireless communication device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.Type: GrantFiled: October 6, 2009Date of Patent: April 22, 2014Assignees: National Institute of Information and Communications Technology, Communications Research Laboratory, Inc.Inventors: Hitoshi Utagawa, Toshiaki Matsui
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Patent number: 8411613Abstract: This inventive wireless communication system comprises a plurality of wireless communication devices (101) each including a radiating oscillator (1), a baseband signal generating unit (4) and a reception signal detecting unit (7).Type: GrantFiled: September 26, 2008Date of Patent: April 2, 2013Assignee: National Institute of Information and Communications TechnologyInventors: Hitoshi Utagawa, Toshiaki Matsui
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Patent number: 8380140Abstract: A baseband signal processing unit changes the collector current of a transistor (20) formed by a bias control circuit (7) in accordance with a baseband transmission signal input from a baseband signal input terminal (18), changing the drain bias of a high-frequency transistor (1) to realize frequency modulation by changing the oscillation frequency, and the radiation wave thereof forms a transmit RF signal, whereby the transmission operation is performed. On the other hand, the oscillation signal is synchronized with a frequency modulated RF signal that arrives from outside, the change in frequency caused by the frequency modulation is generated as a change in the drain bias of the high-frequency transistor (1), and reception operation is performed by taking out that change as a voltage amplitude change from the baseband signal output terminal (14). As a result, it is possible to provide a microwave/millimeter wave communication apparatus that is simple in structure, low cost, and low power consumption.Type: GrantFiled: September 26, 2008Date of Patent: February 19, 2013Assignees: National Institute of Information and Communications Technology, Communications Research Laboratory, Inc.Inventors: Hitoshi Utagawa, Toshiaki Matsui
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Patent number: 8212718Abstract: A microwave/millimeter wave sensor apparatus including a planar radiation type oscillator substrate having an inner-layer GND interposed between a front surface side dielectric substrate and a rear surface side dielectric substrate and a pair of conductor patches in an axis-symmetric manner on the side of the front surface layer. A gate and drain of a microwave transistor are respectively connected to the conductor patches to supply power to the gate and the drain of the microwave transistor through a gate-side RF choke circuit and a drain-side RF choke circuit. An impedance line satisfying an oscillation condition is connected to a source and a transmit RF signal in an RF zone as a planar radiation type oscillator is transmitted and a receive RF signal as reflected waves is received from a measured object, thus obtaining an IF signal as the sensing information through homodyne mixing.Type: GrantFiled: March 31, 2008Date of Patent: July 3, 2012Assignee: National Institute of Information and Communications TechnologyInventors: Hitoshi Utagawa, Toshiaki Matsui
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Patent number: 8160492Abstract: A wireless communication device having extremely simple constitution is used, and a low-cost and low power consumption wireless network system with high-quality signals is provided. The wireless network system comprises a plurality of wireless communication devices (101) each comprising a radiating oscillator (1) configured to integrate a transistor into a microwave oscillating resonator to generate a negative resistance and to commonly use a function of an antenna (11), an intermediate frequency signal generating section (4) and a receiving signal detecting section (7).Type: GrantFiled: March 30, 2007Date of Patent: April 17, 2012Assignee: National Institute of Information and Communications TechnologyInventors: Toshiaki Matsui, Hitoshi Utagawa
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Publication number: 20120002388Abstract: To provide a microwave/milliwave band high-frequency pulse signal generating device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.Type: ApplicationFiled: October 6, 2009Publication date: January 5, 2012Applicants: COMMUNICATIONS RESEARCH LABORATORY, INC., NATIONAL INS. OF INFO. AND COMMUNICATIONS TECH.Inventors: Hitoshi Utagawa, Toshiaki Matsui
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Publication number: 20110260906Abstract: A radiation type oscillator including a radiation type oscillator substrate including a microwave transistor for generating negative resistance by short-duration operation and a resonant cavity structure; a high-frequency pulse signal of an oscillation frequency/frequency bandwidth determined by negative resistance produced by the short-duration operation of the microwave transistor and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space. The radiation type oscillator performs oscillating operation when a received RF signal that is a reflected wave of the transmitted RF signal from an object of detection enters the radiation type oscillator, an IF signal is acquired from an IF signal output terminal owing to homodyne mixing by the radiation type oscillator itself, and this is analyzed and processed to detect the object of detection.Type: ApplicationFiled: October 6, 2009Publication date: October 27, 2011Applicants: COMMUNICATIONS RESEARCH LABORATORY, INC., Nat Institute of Information and Comm TechInventors: Hitoshi Utagawa, Toshiaki Matsui
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Publication number: 20110255634Abstract: To provide a microwave/milliwave UWB pulse wireless communication device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.Type: ApplicationFiled: October 6, 2009Publication date: October 20, 2011Applicants: COMMUNICATIONS RESEARCH LABORATORY, INC., NATIONAL INST. OF INFO. AND COMMUNICATIONS TECH.Inventors: Hitoshi Utagawa, Toshiaki Matsui
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Publication number: 20110244801Abstract: A baseband signal processing unit changes the collector current of a transistor (20) formed by a bias control circuit (7) in accordance with a baseband transmission signal input from a baseband signal input terminal (18), changing the drain bias of a high-frequency transistor (1) to realize frequency modulation by changing the oscillation frequency, and the radiation wave thereof forms a transmit RF signal, whereby the transmission operation is performed. On the other hand, the oscillation signal is synchronized with a frequency modulated RF signal that arrives from outside, the change in frequency caused by the frequency modulation is generated as a change in the drain bias of the high-frequency transistor (1), and reception operation is performed by taking out that change as a voltage amplitude change from the baseband signal output terminal (14). As a result, it is possible to provide a microwave/millimeter wave communication apparatus that is simple in structure, low cost, and low power consumption.Type: ApplicationFiled: September 26, 2008Publication date: October 6, 2011Applicants: NAT INSTITUTE OF INFO AND COMM TECH, COMMUNICATIONS RESEARCH LABORATORY, INC.Inventors: Hitoshi Utagawa, Toshiaki Matsui
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Patent number: 7979101Abstract: It is possible to improve the negative resistance characteristic that can be expected when an SNS (superconductor-normal conductor-superconductor) structure is used as a structure unit for series connection. On the top of a first superconducting electrode, a second superconducting electrode is superimposed so as to sandwich an insulation film between the first and second superconducting electrodes, with parts of cross sections of the second superconducting electrode and insulation film placed on the top. A normal superconducting line electrically connects the first and second superconducting electrodes passing along the cross section of the insulation film, thereby constituting a structure unit having a single weak link. A plurality of such structure units connected in series are prepared. At the both ends of the series the first or second superconducting electrode is an element connected to a leading line.Type: GrantFiled: October 4, 2005Date of Patent: July 12, 2011Assignee: National Institute of Information and Communications Technology, Incorporated Administrative AgencyInventors: Toshiaki Matsui, Hiroshi Ohta, Akira Kawakami
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Patent number: 7947697Abstract: 8-(3-pentylamino)-2-methyl-3-(2-chloro-4-methoxyphenyl)-6,7-dihydro-5H-cyclopenta[d]pyrazolo[1,5-a]pyrimidine methanesulfonate of the structural formula (I) has Corticotropin Releasing Factor (CRF) antagonist activity and is useful in treating neuropsychiatric and digestive system diseases.Type: GrantFiled: June 24, 2004Date of Patent: May 24, 2011Assignee: Ono Pharmaceutical Co., Ltd.Inventors: Tomoyuki Hasegawa, Toshiaki Matsui, Hiroshi Araki, Tetsuji Saito, Tetsuo Obitsu, Masaki Okamoto, Yuichi Gemba, Yutaka Mikami
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Patent number: 7881760Abstract: A magneto-encephalographic equipment superconducting magnetic-shield comprising a vacuum-tight body comprising an outer enclosure wall, a first inner enclosure wall inserted in the outer enclosure wall to define a upper closed space, and a second inner enclosure wall to define a lower open space. The first and second inner enclosure walls are arranged with the bottom of the first inner enclosure wall facing the ceiling of the second inner enclosure wall. A first enclosure of HTSC and a second enclosure of high-permeability material are concentrically arranged in the annular vacuum space defined between the first and second inner enclosure walls and the outer enclosure wall. A head-accommodating area is delimited by the hollow partition between, the bottom of the first inner enclosure wall and the ceiling of the second inner enclosure wall both facing each other, and a plurality of SQUID sensors are arranged in the upper closed space, encircling the head-accommodating area.Type: GrantFiled: June 20, 2007Date of Patent: February 1, 2011Assignee: National Institute of Information and Communications TechnologyInventors: Toshiaki Matsui, Hiroshi Ohta
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Publication number: 20100315990Abstract: This inventive wireless communication system comprises a plurality of wireless communication devices (101) each including a radiating oscillator (1), a baseband signal generating unit (4) and a reception signal detecting unit (7).Type: ApplicationFiled: September 26, 2008Publication date: December 16, 2010Applicant: National Inst. of info. and Communications Tech.Inventors: Hitoshi Utagawa, Toshiaki Matsui