Patents by Inventor Toshiaki Matsui

Toshiaki Matsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190256538
    Abstract: By providing a novel polycyclic aromatic compound in which a plurality of aromatic rings is linked via a nitrogen atom, a boron atom, or the like, options of a material for an organic EL element are increased. In addition, by using the novel polycyclic aromatic compound as a material for an organic electroluminescent element, an excellent organic EL element is provided.
    Type: Application
    Filed: August 25, 2017
    Publication date: August 22, 2019
    Applicants: Kwansei Gakuin Educational Foundation, JNC Corporation
    Inventors: Takuji HATAKEYAMA, Kohei MATSUI, Yusuke WATANABE, Daisuke BABA, Yasuyuki SASADA, Motoki YANAI, Toshiaki IKUTA
  • Publication number: 20190242008
    Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.
    Type: Application
    Filed: July 12, 2017
    Publication date: August 8, 2019
    Inventors: Yoshiyuki SUDA, Takahiro TSUKAMOTO, Akira MOTOHASHI, Kyohei DEGURA, Katsumi OKUBO, Takuma YAGI, Akifumi KASAMATSU, Nobumitsu HIROSE, Toshiaki MATSUI
  • Patent number: 10347068
    Abstract: A capacitance detection device includes a first electrode and a second electrode that at least partially face each other on opposite sides of a transfer path. An oscillator circuit forms an electric field between the first electrode and the second electrode. A detection circuit detects a change in capacitance between the first electrode and the second electrode. At least one of the oscillator circuit and the detection circuit is included in each of a first board and a second board. The first board is disposed such that a side surface of the first board faces the first electrode in an electric field direction, and the second board is disposed such that a side surface of the second board faces the second electrode in the electric field direction.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: July 9, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Miki Kagano, Hiroshi Araki, Toshiaki Shoji, Hideki Matsui, Kazuya Makabe, Tomoyuki Miyata, Tomokazu Ogomi
  • Publication number: 20190139349
    Abstract: A capacitance detection device includes a first electrode and a second electrode that at least partially face each other on opposite sides of a transfer path. An oscillator circuit forms an electric field between the first electrode and the second electrode. A detection circuit detects a change in capacitance between the first electrode and the second electrode. At least one of the oscillator circuit and the detection circuit is included in each of a first board and a second board. The first board is disposed such that a side surface of the first board faces the first electrode in an electric field direction, and the second board is disposed such that a side surface of the second board faces the second electrode in the electric field direction.
    Type: Application
    Filed: September 25, 2017
    Publication date: May 9, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Miki KAGANO, Hiroshi ARAKI, Toshiaki SHOJI, Hideki MATSUI, Kazuya MAKABE, Tomoyuki MIYATA, Tomokazu OGOMI
  • Publication number: 20160252152
    Abstract: The damper device is equipped with: a cylinder unit having a sliding inner wall surface; a piston unit, having a piston head, which has an outer diameter part that slides on the sliding inner wall surface of the cylinder unit, and divides the interior space of the cylinder unit into a first gas chamber and a second gas chamber, a rod extending from the second gas chamber side of the piston head, and a closed-end hole which opens toward the first air chamber side of the piston head and extends through the interior of the rod in the direction of the second air chamber; and a guide shaft affixed to the first gas chamber side of the cylinder unit and equipped with a tip part having an outer circumferential surface that slides on the inner wall surface of the closed-end hole of the piston unit.
    Type: Application
    Filed: October 20, 2014
    Publication date: September 1, 2016
    Applicants: Pneumatic Servo Controls Ltd., Nippon Steel & Sumitomo Metal Corporation
    Inventors: Katsumi Sasaki, Osamu Goto, Toshiaki Matsui
  • Patent number: 8922424
    Abstract: A radiation type oscillator including a radiation type oscillator substrate including a microwave transistor for generating negative resistance by short-duration operation and a resonant cavity structure; a high-frequency pulse signal of an oscillation frequency/frequency bandwidth determined by negative resistance produced by the short-duration operation of the microwave transistor and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space. The radiation type oscillator performs oscillating operation when a received RF signal that is a reflected wave of the transmitted RF signal from an object of detection enters the radiation type oscillator, an IF signal is acquired from an IF signal output terminal owing to homodyne mixing by the radiation type oscillator itself, and this is analyzed and processed to detect the object of detection.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: December 30, 2014
    Assignees: National Institute of Information and Communications Technology, Communications Research Laboratory, Inc.
    Inventors: Hitoshi Utagawa, Toshiaki Matsui
  • Patent number: 8847817
    Abstract: To provide a microwave/milliwave band high-frequency pulse signal generating device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: September 30, 2014
    Assignees: National Institute of Information and Communication Technology, Communications Research Laboratory, Inc.
    Inventors: Hitoshi Utagawa, Toshiaki Matsui
  • Patent number: 8705652
    Abstract: To provide a microwave/milliwave UWB pulse wireless communication device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: April 22, 2014
    Assignees: National Institute of Information and Communications Technology, Communications Research Laboratory, Inc.
    Inventors: Hitoshi Utagawa, Toshiaki Matsui
  • Patent number: 8411613
    Abstract: This inventive wireless communication system comprises a plurality of wireless communication devices (101) each including a radiating oscillator (1), a baseband signal generating unit (4) and a reception signal detecting unit (7).
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: April 2, 2013
    Assignee: National Institute of Information and Communications Technology
    Inventors: Hitoshi Utagawa, Toshiaki Matsui
  • Patent number: 8380140
    Abstract: A baseband signal processing unit changes the collector current of a transistor (20) formed by a bias control circuit (7) in accordance with a baseband transmission signal input from a baseband signal input terminal (18), changing the drain bias of a high-frequency transistor (1) to realize frequency modulation by changing the oscillation frequency, and the radiation wave thereof forms a transmit RF signal, whereby the transmission operation is performed. On the other hand, the oscillation signal is synchronized with a frequency modulated RF signal that arrives from outside, the change in frequency caused by the frequency modulation is generated as a change in the drain bias of the high-frequency transistor (1), and reception operation is performed by taking out that change as a voltage amplitude change from the baseband signal output terminal (14). As a result, it is possible to provide a microwave/millimeter wave communication apparatus that is simple in structure, low cost, and low power consumption.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: February 19, 2013
    Assignees: National Institute of Information and Communications Technology, Communications Research Laboratory, Inc.
    Inventors: Hitoshi Utagawa, Toshiaki Matsui
  • Patent number: 8212718
    Abstract: A microwave/millimeter wave sensor apparatus including a planar radiation type oscillator substrate having an inner-layer GND interposed between a front surface side dielectric substrate and a rear surface side dielectric substrate and a pair of conductor patches in an axis-symmetric manner on the side of the front surface layer. A gate and drain of a microwave transistor are respectively connected to the conductor patches to supply power to the gate and the drain of the microwave transistor through a gate-side RF choke circuit and a drain-side RF choke circuit. An impedance line satisfying an oscillation condition is connected to a source and a transmit RF signal in an RF zone as a planar radiation type oscillator is transmitted and a receive RF signal as reflected waves is received from a measured object, thus obtaining an IF signal as the sensing information through homodyne mixing.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: July 3, 2012
    Assignee: National Institute of Information and Communications Technology
    Inventors: Hitoshi Utagawa, Toshiaki Matsui
  • Patent number: 8160492
    Abstract: A wireless communication device having extremely simple constitution is used, and a low-cost and low power consumption wireless network system with high-quality signals is provided. The wireless network system comprises a plurality of wireless communication devices (101) each comprising a radiating oscillator (1) configured to integrate a transistor into a microwave oscillating resonator to generate a negative resistance and to commonly use a function of an antenna (11), an intermediate frequency signal generating section (4) and a receiving signal detecting section (7).
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: April 17, 2012
    Assignee: National Institute of Information and Communications Technology
    Inventors: Toshiaki Matsui, Hitoshi Utagawa
  • Publication number: 20120002388
    Abstract: To provide a microwave/milliwave band high-frequency pulse signal generating device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.
    Type: Application
    Filed: October 6, 2009
    Publication date: January 5, 2012
    Applicants: COMMUNICATIONS RESEARCH LABORATORY, INC., NATIONAL INS. OF INFO. AND COMMUNICATIONS TECH.
    Inventors: Hitoshi Utagawa, Toshiaki Matsui
  • Publication number: 20110260906
    Abstract: A radiation type oscillator including a radiation type oscillator substrate including a microwave transistor for generating negative resistance by short-duration operation and a resonant cavity structure; a high-frequency pulse signal of an oscillation frequency/frequency bandwidth determined by negative resistance produced by the short-duration operation of the microwave transistor and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space. The radiation type oscillator performs oscillating operation when a received RF signal that is a reflected wave of the transmitted RF signal from an object of detection enters the radiation type oscillator, an IF signal is acquired from an IF signal output terminal owing to homodyne mixing by the radiation type oscillator itself, and this is analyzed and processed to detect the object of detection.
    Type: Application
    Filed: October 6, 2009
    Publication date: October 27, 2011
    Applicants: COMMUNICATIONS RESEARCH LABORATORY, INC., Nat Institute of Information and Comm Tech
    Inventors: Hitoshi Utagawa, Toshiaki Matsui
  • Publication number: 20110255634
    Abstract: To provide a microwave/milliwave UWB pulse wireless communication device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.
    Type: Application
    Filed: October 6, 2009
    Publication date: October 20, 2011
    Applicants: COMMUNICATIONS RESEARCH LABORATORY, INC., NATIONAL INST. OF INFO. AND COMMUNICATIONS TECH.
    Inventors: Hitoshi Utagawa, Toshiaki Matsui
  • Publication number: 20110244801
    Abstract: A baseband signal processing unit changes the collector current of a transistor (20) formed by a bias control circuit (7) in accordance with a baseband transmission signal input from a baseband signal input terminal (18), changing the drain bias of a high-frequency transistor (1) to realize frequency modulation by changing the oscillation frequency, and the radiation wave thereof forms a transmit RF signal, whereby the transmission operation is performed. On the other hand, the oscillation signal is synchronized with a frequency modulated RF signal that arrives from outside, the change in frequency caused by the frequency modulation is generated as a change in the drain bias of the high-frequency transistor (1), and reception operation is performed by taking out that change as a voltage amplitude change from the baseband signal output terminal (14). As a result, it is possible to provide a microwave/millimeter wave communication apparatus that is simple in structure, low cost, and low power consumption.
    Type: Application
    Filed: September 26, 2008
    Publication date: October 6, 2011
    Applicants: NAT INSTITUTE OF INFO AND COMM TECH, COMMUNICATIONS RESEARCH LABORATORY, INC.
    Inventors: Hitoshi Utagawa, Toshiaki Matsui
  • Patent number: 7979101
    Abstract: It is possible to improve the negative resistance characteristic that can be expected when an SNS (superconductor-normal conductor-superconductor) structure is used as a structure unit for series connection. On the top of a first superconducting electrode, a second superconducting electrode is superimposed so as to sandwich an insulation film between the first and second superconducting electrodes, with parts of cross sections of the second superconducting electrode and insulation film placed on the top. A normal superconducting line electrically connects the first and second superconducting electrodes passing along the cross section of the insulation film, thereby constituting a structure unit having a single weak link. A plurality of such structure units connected in series are prepared. At the both ends of the series the first or second superconducting electrode is an element connected to a leading line.
    Type: Grant
    Filed: October 4, 2005
    Date of Patent: July 12, 2011
    Assignee: National Institute of Information and Communications Technology, Incorporated Administrative Agency
    Inventors: Toshiaki Matsui, Hiroshi Ohta, Akira Kawakami
  • Patent number: 7947697
    Abstract: 8-(3-pentylamino)-2-methyl-3-(2-chloro-4-methoxyphenyl)-6,7-dihydro-5H-cyclopenta[d]pyrazolo[1,5-a]pyrimidine methanesulfonate of the structural formula (I) has Corticotropin Releasing Factor (CRF) antagonist activity and is useful in treating neuropsychiatric and digestive system diseases.
    Type: Grant
    Filed: June 24, 2004
    Date of Patent: May 24, 2011
    Assignee: Ono Pharmaceutical Co., Ltd.
    Inventors: Tomoyuki Hasegawa, Toshiaki Matsui, Hiroshi Araki, Tetsuji Saito, Tetsuo Obitsu, Masaki Okamoto, Yuichi Gemba, Yutaka Mikami
  • Patent number: 7881760
    Abstract: A magneto-encephalographic equipment superconducting magnetic-shield comprising a vacuum-tight body comprising an outer enclosure wall, a first inner enclosure wall inserted in the outer enclosure wall to define a upper closed space, and a second inner enclosure wall to define a lower open space. The first and second inner enclosure walls are arranged with the bottom of the first inner enclosure wall facing the ceiling of the second inner enclosure wall. A first enclosure of HTSC and a second enclosure of high-permeability material are concentrically arranged in the annular vacuum space defined between the first and second inner enclosure walls and the outer enclosure wall. A head-accommodating area is delimited by the hollow partition between, the bottom of the first inner enclosure wall and the ceiling of the second inner enclosure wall both facing each other, and a plurality of SQUID sensors are arranged in the upper closed space, encircling the head-accommodating area.
    Type: Grant
    Filed: June 20, 2007
    Date of Patent: February 1, 2011
    Assignee: National Institute of Information and Communications Technology
    Inventors: Toshiaki Matsui, Hiroshi Ohta
  • Publication number: 20100315990
    Abstract: This inventive wireless communication system comprises a plurality of wireless communication devices (101) each including a radiating oscillator (1), a baseband signal generating unit (4) and a reception signal detecting unit (7).
    Type: Application
    Filed: September 26, 2008
    Publication date: December 16, 2010
    Applicant: National Inst. of info. and Communications Tech.
    Inventors: Hitoshi Utagawa, Toshiaki Matsui