Patents by Inventor Toshiaki Nishida
Toshiaki Nishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230282491Abstract: Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV. The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.Type: ApplicationFiled: February 24, 2023Publication date: September 7, 2023Inventors: Naoyuki KOFUJI, Masahito MORI, Toshiaki NISHIDA, Ryoji HAMASAKI
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Publication number: 20180047595Abstract: Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV. The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.Type: ApplicationFiled: April 27, 2016Publication date: February 15, 2018Inventors: Naoyuki KOFUJI, Masahito MORI, Toshiaki NISHIDA, Ryoji HAMASAKI
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Patent number: 8207066Abstract: The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.Type: GrantFiled: July 30, 2009Date of Patent: June 26, 2012Assignee: Hitachi High-Technologies CorporationInventors: Yoshiharu Inoue, Hiroaki Ishimura, Hitoshi Kobayashi, Masunori Ishihara, Toru Ito, Toshiaki Nishida
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Publication number: 20100255612Abstract: The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.Type: ApplicationFiled: July 30, 2009Publication date: October 7, 2010Inventors: Yoshiharu INOUE, Hiroaki ISHIMURA, Hitoshi KOBAYASHI, Masunori ISHIHARA, Toru ITO, Toshiaki NISHIDA
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Patent number: 7442651Abstract: An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.Type: GrantFiled: February 16, 2006Date of Patent: October 28, 2008Assignee: Hitachi High-Technologies CorporationInventors: Masahito Mori, Toshiaki Nishida, Naoshi Itabashi, Motohiko Yoshigai, Hideyuki Kazumi, Kazutami Tago
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Patent number: 7364956Abstract: A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He. The gas mixture further contains Cl2. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.Type: GrantFiled: August 24, 2005Date of Patent: April 29, 2008Assignee: Hitachi High-Technologies CorporationInventors: Go Saito, Toshiaki Nishida, Takahiro Shimomura, Takao Arase
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Publication number: 20070134922Abstract: An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.Type: ApplicationFiled: February 16, 2006Publication date: June 14, 2007Inventors: Masahito Mori, Toshiaki Nishida, Naoshi Itabashi, Motohiko Yoshigai, Hideyuki Kazumi, Kazutami Tago
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Publication number: 20070090090Abstract: A surface treatment method is provided, wherein the ratio of the etching rate of a lower resist of a multilayer resist film used for forming a fine pattern to that of an inorganic intermediate layer thin film serving as a mask to control the dimension of the pattern, that is, the shoulder selection ratio, is increased in an etching treatment of a semiconductor or the like. In the surface treatment method of a semiconductor, in which an inorganic intermediate film and an upper resist film are laminated on a lower resist film, by using plasma, CO2 containing oxygen as a primary component is added to a gas composed of nitrogen and hydrogen, so that an etching gas is prepared. Consequently, cutting of a shoulder of the inorganic intermediate layer film is reduced and a perpendicular shape is attained.Type: ApplicationFiled: February 2, 2006Publication date: April 26, 2007Inventors: Koichi Nakaune, Yasuhiro Nishimori, Toshiaki Nishida, Tsuyoshi Yoshida
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Publication number: 20070026611Abstract: A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He. The gas mixture further contains Cl2. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.Type: ApplicationFiled: August 24, 2005Publication date: February 1, 2007Inventors: Go Saito, Toshiaki Nishida, Takahiro Shimomura, Takao Arase
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Patent number: 5957989Abstract: A calculating portion 7a calculates a distance from the tip end of a front device to an interference prevention area, and a detection line 7m detects a moving speed of a boom 1. If the tip end of the front device comes close to the interference prevention area when the boom 1 is moving upward, control is made such that, while continuing to move the boom 1 upward, a control gain calculating portion 7h and a multiplier 7i cooperatively calculate a target speed of an arm in the arm dumping direction (interference avoiding direction) corresponding to the boom-up speed, and an input limit value calculating portion 7c, an adder 7j and a minimum value selecting portion 7f cooperatively control the arm to move in the interference avoiding direction relative to a vehicle body.Type: GrantFiled: December 4, 1996Date of Patent: September 28, 1999Assignee: Hitachi Construction Machinery Co. Ltd.Inventors: Eiji Egawa, Hiroshi Watanabe, Hiroyuki Adachi, Junichi Hosono, Toshiaki Nishida, Mitsuo Kihara, Masakazu Haga
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Patent number: 5528527Abstract: A sampling frequency converter capable of performing an operation of multiplications and additions at a lower speed and realizing with a small amount of hardware.Type: GrantFiled: February 21, 1995Date of Patent: June 18, 1996Assignee: Kabushiki Kaisha KenwoodInventors: Toshio Iwata, Toshiaki Nishida, Tsuyoshi Tsumuraya
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Patent number: 5514332Abstract: Titanium having a thermal shrinkage factor close to that of Nb.sub.3 Sn superconducting wire, whereby it gives rise to little degradation of the properties of the superconducting wire and also offers a good balance between strength and toughness at liquid helium temperature, making it highly suitable as a conduit pipe material used as a seal for liquid helium for high-magnetic-field superconducting coil applications. The present invention focusses on the major effect on strength and toughness of titanium material that the oxygen content has, and appropriately controls the oxygen and other impurities content of pure titanium to provide titanium material comprising, in mass %, 0.07 to 0.13 percent O, up to 0.10 percent Fe, up to 0.10 percent C+N, and up to 0.Type: GrantFiled: May 16, 1994Date of Patent: May 7, 1996Assignees: Nippon Steel Corporation, Japan Atomic Energy Research InstituteInventors: Takao Horiya, Shigeru Ohkita, Toshiaki Nishida, Hirofumi Yoshimura, Naoomi Yamada, Masayuki Yamamoto, Hideo Nakajima, Toshinari Andou
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Patent number: 5267100Abstract: Magnetic recording apparatus for recording data onto a recording medium comprises a rotary drum with recording heads and reproducing heads which are disposed spaced from each other to confirm whether correct data is recorded onto the recording medium. In response to the detection of erroroneous recording, the transfer of new data to the recording heads is interrupted and misrecorded data is re-recorded onto the recording medium.Type: GrantFiled: March 25, 1993Date of Patent: November 30, 1993Assignee: Kabushiki Kaisha KenwoodInventors: Hiroshi Ichijo, Toshiaki Nishida, Hirohisa Shibuya
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Patent number: 4488529Abstract: An air-fuel ratio control system for an internal combustion engine for controlling the air-fuel mixing ratio of a combustible mixture to be supplied to the engine on a feedback control scheme in dependence on the concentration of a constituent of exhaust gases which is a function of the air-fuel mixing ratio of the combustible mixture having been combusted. The feedback control scheme of the air-fuel ratio control system for adjusting the ratio to the stoichiometric value is temporarily disconnected to permit the mixture to be enriched so that the engine can produce a relatively high power output during the high load engine operating condition.Type: GrantFiled: November 22, 1983Date of Patent: December 18, 1984Assignee: Mazda Motor CorporationInventors: Toshiaki Nishida, Kazuyuki Okazaki, Hideki Kakumoto, Tatsuji Ikeda
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Patent number: D677703Type: GrantFiled: August 27, 2012Date of Patent: March 12, 2013Assignee: Hitachi Construction Machinery Co., Ltd.Inventors: Kazuhiko Hiraoka, Shigehisa Hagura, Tomoyuki Miyata, Toshiaki Nishida, Kazunori Komatsu, Hiroki Tanaka, Hiroyuki Isobe, Masao Nakamura
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Patent number: D678354Type: GrantFiled: August 27, 2012Date of Patent: March 19, 2013Assignee: Hitachi Construction Machinery Co., Ltd.Inventors: Kazuhiko Hiraoka, Shigehisa Hagura, Tomoyuki Miyata, Toshiaki Nishida, Kazunori Komatsu, Hiroki Tanaka, Hiroyuki Isobe, Masao Nakamura