Abstract: An object of the present invention is to provide a method for manufacturing quantum dots capable of containing a large amount of Zn on a surface thereof, and a quantum dot. A method for manufacturing quantum dots of the present invention includes a step of producing a core containing at least Ag, Ga, and S or Ag, Ga, and Se, and a step of coating a surface of the core with a shell, and in the step of coating with the shell, the surface of the core is coated with GaS, and then Zn is added. It is preferable that the surface of the core is coated with ZnS after being coated with GaS. It is preferable that the core and the shell do not contain Cd and In.

Abstract: A quantum dot of the present invention is a nanocrystal represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) containing silver, indium, and chalcogen, in which a fluorescence wavelength is within a range of a near-infrared region of 700 to 1500 nm, a fluorescence full width at half maximum is 150 nm or less, and a fluorescence quantum yield is higher than 20%. In the present invention, an average particle diameter is preferably 1 nm or more and 15 nm or less. In addition, a method for producing a quantum dot of the present invention includes synthesizing a quantum dot represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).

Abstract: A quantum dot of the present invention is a nanocrystal represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) containing silver, indium, and chalcogen, in which a fluorescence wavelength is within a range of a near-infrared region of 700 to 1500 nm, a fluorescence full width at half maximum is 150 nm or less, and a fluorescence quantum yield is higher than 20%. In the present invention, an average particle diameter is preferably 1 nm or more and 15 nm or less. In addition, a method for producing a quantum dot of the present invention includes synthesizing a quantum dot represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).