Abstract: A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface electrode pattern so as to enclose the semiconductor elements for electric power; a first sealing resin member which is filled inside the partition wall; a second sealing resin member which covers the first sealing resin member and a part of the semiconductor-element substrate which is exposed from the partition wall, wherein an electrode for a relay terminal is provided on a surface of the partition wall, and a wiring from inside of the partition wall to outside of the partition wall is led out via the electrode for a relay terminal.

Abstract: A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface electrode pattern so as to enclose the semiconductor elements for electric power; a first sealing resin member which is filled inside the partition wall; a second sealing resin member which covers the first sealing resin member and a part of the semiconductor-element substrate which is exposed from the partition wall, wherein an electrode for a relay terminal is provided on a surface of the partition wall, and a wiring from inside of the partition wall to outside of the partition wall is led out via the electrode for a relay terminal.

Abstract: A dilator which can suppress rapid change in resistance and can perform smooth insertion into a hole includes a distal portion, an outer diameter of which increases towards a proximal end side in an axial direction; and a reduced cross-sectional area portion which is provided at least on a largest outer diameter portion of the distal portion, and is obtained by reducing a part of an outer periphery of a circular cross section, and a width of the reduced cross-sectional area portion in a chord direction is equal to or greater than a depth of the reduced cross-sectional area portion in a direction perpendicular to the chord direction.

Abstract: A power module according to the present invention is a power module configured such that a power device chip is arranged within an outer casing and an electrode of the power device chip is connected to an external electrode that is integrated with the outer casing. The power module includes: a heat spreader fixed inside the outer casing; the power device chip solder-bonded on the heat spreader; an insulating dam formed on the heat spreader so as to surround the power device chip; and an internal main electrode having one end thereof solder-bonded to the electrode of the power device chip and the other end thereof fixed to an upper surface of the dam. The external electrode and the other end of the internal main electrode are electrically connected to each other by wire bonding.

Abstract: A semiconductor module includes: an insulating plate; a plurality of metal patterns formed on the insulating plate and spaced apart from each other; a power device chip solder-joined on one the metal pattern; a lead frame solder-joined on the metal pattern to which the power device chip is not solder-joined, and on the power device chip; an external main electrode provided to an outer casing, and joined by wire bonding to the lead frame above the metal pattern to which the power device chip is not joined; and a sealing resin formed by potting to seal the power device chip, the lead frame, and the metal patterns.

Abstract: A power module according to the present invention is a power module configured such that a power device chip is arranged within an outer casing and an electrode of the power device chip is connected to an external electrode that is integrated with the outer casing. The power module includes: a heat spreader fixed inside the outer casing; the power device chip solder-bonded on the heat spreader; an insulating dam formed on the heat spreader so as to surround the power device chip; and an internal main electrode having one end thereof solder-bonded to the electrode of the power device chip and the other end thereof fixed to an upper surface of the dam. The external electrode and the other end of the internal main electrode are electrically connected to each other by wire bonding.

Abstract: A semiconductor module includes: an insulating plate; a plurality of metal patterns formed on the insulating plate and spaced apart from each other; a power device chip solder-joined on one the metal pattern; a lead frame solder-joined on the metal pattern to which the power device chip is not solder-joined, and on the power device chip; an external main electrode provided to an outer casing, and joined by wire bonding to the lead frame above the metal pattern to which the power device chip is not joined; and a sealing resin formed by potting to seal the power device chip, the lead frame, and the metal patterns.

Abstract: A semiconductor module includes: an insulating plate; a plurality of metal patterns formed on the insulating plate and spaced apart from each other; a power device chip solder-joined on one the metal pattern; a lead frame solder-joined on the metal pattern to which the power device chip is not solder-joined, and on the power device chip; an external main electrode provided to an outer casing, and joined by wire bonding to the lead frame above the metal pattern to which the power device chip is not joined; and a sealing resin formed by potting to seal the power device chip, the lead frame, and the metal patterns.

Abstract: Provided is a power module that prevents a deterioration of reliability of bonded portions of aluminum wires, and enables a high-temperature operation of a Si or SiC device. A power module according to the present invention includes: insulating substrates arranged in a case; power elements bonded on the insulating substrates; wiring members as first wiring members which are rectangular tube-like metal, and have first side surfaces bonded to surface electrodes of the power elements; aluminum wires as wires connected to second side surfaces of the wiring members, which are opposite to the first side surfaces, and a sealing material filled into the case while covering the insulating substrates, the power elements, the wiring members and the aluminum wires.

Abstract: A power semiconductor device according to the present invention includes a heat sink made of Cu and having a thickness of 2 to 3 mm, an insulating substrate bonded on the heat sink with interposition of a first bonding layer (under-substrate solder), and a power semiconductor element mounted on the insulating substrate. In the heat sink, a buffer slot is formed at a periphery of a region bonded to the insulating substrate.

Abstract: A power module includes a power device having a top electrode and a bottom electrode, an upper metal block connected to the top electrode, a lower metal block connected to the bottom electrode, a resin covering the power device, the upper metal block and the lower metal block so as to expose a upper surface of the upper metal block and a lower surface of the lower metal block, an upper terminal-cooling power-applying block connected to the upper metal block, a lower terminal-cooling power-applying block connected to the lower metal block, an upper terminal connected to the upper terminal-cooling power-applying block, a lower terminal connected to the lower terminal-cooling power-applying block, and a insulating case covering all elements so as to expose a part of the upper terminal and a part of the lower terminal.

Abstract: A power module includes a power device having a top electrode and a bottom electrode, an upper metal block connected to the top electrode, a lower metal block connected to the bottom electrode, a resin covering the power device, the upper metal block and the lower metal block so as to expose a upper surface of the upper metal block and a lower surface of the lower metal block, an upper terminal-cooling power-applying block connected to the upper metal block, a lower terminal-cooling power-applying block connected to the lower metal block, an upper terminal connected to the upper terminal-cooling power-applying block, a lower terminal connected to the lower terminal-cooling power-applying block, and a insulating case covering all elements so as to expose a part of the upper terminal and a part of the lower terminal.

Abstract: The circuit breaker according to the present invention has first and second terminals having favorable electric conductivity and joined to each other with solder; and a heater whose circumference is insulated installed for melting the solder and supplied with electric power from the current path separate from current paths passing through the first and second terminals; wherein the first and second terminals are separated by a spring force and insulated when the solder is melted.

Abstract: One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.

Abstract: The semiconductor device according to one of the embodiments of the present invention includes a metal block having first and second main surfaces and defining a recess on the first main surface. It also includes a semiconductor chip received within the recess of the metal block and mounted on the metal block. Further, a first terminal electrically connected with the semiconductor chip is provided, and a second terminal electrically connected with the metal block is also provided.

Abstract: One of the aspects of the present invention is to provide a semiconductor module, which includes at least one semiconductor device including a semiconductor element molded with a resin package having a main surface and a side surface, and a plurality of terminals extending from the side surface and being bent towards a direction away from the main surface. It also includes a box-shaped hollow casing including a base member having a plurality of through-holes and an opening opposing to the base member, for receiving the semiconductor device with the terminals of the semiconductor device inserted into the through-holes. Further, the semiconductor module includes an insulating resin member filling up a gap defined between the semiconductor device and the casing so as to cover portions of the terminals at the side surface of the resin package of the semiconductor device.

Abstract: The circuit breaker according to the present invention has first and second terminals having favorable electric conductivity and joined to each other with solder; and a heater whose circumference is insulated installed for melting the solder and supplied with electric power from the current path separate from current paths passing through the first and second terminals; wherein the first and second terminals are separated by a spring force and insulated when the solder is melted.

Abstract: An image capture and transmission system includes first and second imaging devices. A timing signal generator produces a timing signal. A common drive circuit operates for driving the first and second imaging devices at equal timings determined by the timing signal. A first signal processor operates for converting an output signal of the first imaging device into first digital video data. A second signal processor operates for converting an output signal of the second imaging device into second digital video data. The first digital video data and the second digital video data are processed into a stream of packets. The packet stream is transmitted to, for example, a network.

Abstract: According to the present invention, when an image data currently being received is switched over to the data from another image information device, the best picture quality is provided without stopping the image up to the next I frame even when the switching request is given at the middle of I frame.

Abstract: One of the aspects of the present invention is to provide a semiconductor module, which includes at least one semiconductor device including a semiconductor element molded with a resin package having a main surface and a side surface, and a plurality of terminals extending from the side surface and being bent towards a direction away from the main surface. It also includes a box-shaped hollow casing including a base member having a plurality of through-holes and an opening opposing to the base member, for receiving the semiconductor device with the terminals of the semiconductor device inserted into the through-holes. Further, the semiconductor module includes an insulating resin member filling up a gap defined between the semiconductor device and the casing so as to cover portions of the terminals at the side surface of the resin package of the semiconductor device.