Patents by Inventor Toshiaki Ueda
Toshiaki Ueda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240079518Abstract: An object of the present invention is to provide a method for manufacturing quantum dots capable of containing a large amount of Zn on a surface thereof, and a quantum dot. A method for manufacturing quantum dots of the present invention includes a step of producing a core containing at least Ag, Ga, and S or Ag, Ga, and Se, and a step of coating a surface of the core with a shell, and in the step of coating with the shell, the surface of the core is coated with GaS, and then Zn is added. It is preferable that the surface of the core is coated with ZnS after being coated with GaS. It is preferable that the core and the shell do not contain Cd and In.Type: ApplicationFiled: December 24, 2021Publication date: March 7, 2024Applicant: NS MATERIALS INC.Inventors: Akio MISHIMA, Soichiro NIKATA, Vit KALOUSEK, Toshiaki SHIMASAKI, Yuko OGURA, Mikihiro TAKASAKI, Shogo UEDA, Yuya ASHIMURA
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Publication number: 20240066865Abstract: A liquid discharge head includes a nozzle layer having a nozzle through which a liquid is discharged from a second side toward a first side, a liquid chamber substrate, and a drive circuit. The nozzle layer includes a vibration layer, a piezoelectric actuator adjacent to the nozzle and over the first side, a circuit connection over the first side, a first protective layer around the circuit connection, a second protective layer over the piezoelectric actuator, a first water-resistant film over the first protective layer, and a second water-resistant film over the second protective layer. The second protective layer is separated from the first protective layer. The first protective layer defines an opening above the circuit connection. The liquid chamber substrate has a liquid chamber communicating with the nozzle. The drive circuit is disposed over the second side and connected to the circuit connection to drive the piezoelectric actuator.Type: ApplicationFiled: January 19, 2022Publication date: February 29, 2024Inventors: Keiji UEDA, Takahiko KURODA, Toshiaki MASUDA, Kaname MORITA
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Patent number: 11792508Abstract: A remote control device 60 measures a distance to a noticed imaging target OB directly in front of the remote control device 60 by a distance measurement unit. Further, the remote control device 60 measures a movement from an initial state by a motion sensor unit and transmits imaging target position information indicative of the measured distance and movement from a communication unit to an imaging device 20. An imaging target position calculation unit provided on the imaging device 20 calculates, on the basis of the imaging target position information from the remote control device 60, a direction of the noticed imaging target OB with respect to the direction in the initial state of the imaging device 20. By generating a direction controlling signal on the basis of a calculation result of the imaging target position calculation unit and outputting the direction controlling signal to a pan head 40, the imaging direction of the imaging device 20 can be set to the direction of the noticed imaging target OB.Type: GrantFiled: January 7, 2020Date of Patent: October 17, 2023Assignee: SONY GROUP CORPORATIONInventors: Tomoya Ouchi, Toshiaki Ueda, Takayuki Hatanaka
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Publication number: 20220191383Abstract: A remote control device 60 measures a distance to a noticed imaging target OB directly in front of the remote control device 60 by a distance measurement unit. Further, the remote control device 60 measures a movement from an initial state by a motion sensor unit and transmits imaging target position information indicative of the measured distance and movement from a communication unit to an imaging device 20. An imaging target position calculation unit provided on the imaging device 20 calculates, on the basis of the imaging target position information from the remote control device 60, a direction of the noticed imaging target OB with respect to the direction in the initial state of the imaging device 20. By generating a direction controlling signal on the basis of a calculation result of the imaging target position calculation unit and outputting the direction controlling signal to a pan head 40, the imaging direction of the imaging device 20 can be set to the direction of the noticed imaging target OB.Type: ApplicationFiled: January 7, 2020Publication date: June 16, 2022Inventors: TOMOYA OUCHI, TOSHIAKI UEDA, TAKAYUKI HATANAKA
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Publication number: 20220150421Abstract: A sub imaging apparatus 60 used by a user generates a sub captured image by imaging a subject OB. A main imaging apparatus 20 of which an imaging direction can be changed by a camera platform 40 is remotely controlled by the sub imaging apparatus 60 to image the subject imaged by the sub imaging apparatus 60 so as to generate a main captured image with an angle of view different from that of the sub captured image. An image combination section included in the sub imaging apparatus 60 generates a display image by combining the sub captured image generated by the sub imaging apparatus 60 with the main captured image generated by the main imaging apparatus 20. A display section included in the sub imaging apparatus 60 displays the display image generated by the image combination section. Using the sub imaging apparatus 60, the user may cause the main imaging apparatus 20 away from the sub imaging apparatus 60 to image a desired subject easily.Type: ApplicationFiled: January 7, 2020Publication date: May 12, 2022Inventors: TOSHIAKI UEDA, TOMOYA OUCHI, TAKAYUKI HATANAKA
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Patent number: 10822691Abstract: A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 ?m or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 ?m or more is 1% to 30%.Type: GrantFiled: March 10, 2016Date of Patent: November 3, 2020Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Yuki Yoshida, Toshiaki Ueda, Satoru Mori
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Publication number: 20190040524Abstract: Provided is a method of manufacturing a Cu—Ga alloy sputtering target made of a Cu—Ga alloy with a hollow portion, the method including: a calcining step of forming a calcined material by charging a raw material powder that includes at least a Cu—Ga alloy powder into a mold that includes a core and heating the raw material powder in a reducing atmosphere; and a main sintering step of forming a sintered material by removing the core from the calcined material and heating the calcined material in a reducing atmosphere, in which the core used in the calcining step is made of a material having a higher linear thermal expansion coefficient than a Cu—Ga alloy constituting the Cu—Ga alloy sputtering target, and the calcined material is formed by holding the raw material powder at a temperature of 100-600° C. for 10 minutes to 10 hours in the calcining step.Type: ApplicationFiled: January 12, 2017Publication date: February 7, 2019Inventors: Yuki Yoshida, Toshiaki Ueda, Satoru Mori
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Patent number: 10023488Abstract: The synthetic amorphous silica powder of the present invention is characterized in that it comprises a synthetic amorphous silica powder obtained by applying a spheroidizing treatment to a silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D50 of 10 to 2,000 ?m; wherein the synthetic amorphous silica powder has: a quotient of 1.00 to 1.35 obtained by dividing a BET specific surface area of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity of 0.75 to 1.00; and an unmolten ratio of 0.00 to 0.25.Type: GrantFiled: July 21, 2015Date of Patent: July 17, 2018Assignee: MITSUBISHI MATERIALS CORPORATIONInventor: Toshiaki Ueda
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Publication number: 20180066355Abstract: A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 ?m or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 ?m or more is 1% to 30%.Type: ApplicationFiled: March 10, 2016Publication date: March 8, 2018Inventors: Yuki Yoshida, Toshiaki Ueda, Satoru Mori
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Patent number: 9745201Abstract: The purpose of the present invention is to provide: a synthetic amorphous silica powder which is suitable as a raw material for a synthetic silica glass product used in a high-temperature and reduced-pressure environment, which can yield a synthetic silica product such that the occurrence or expansion of air bubbles in the glass product is inhibited even in use in a high-temperature and reduced-pressure environment, and which can be obtained at a relatively low cost; and a process for manufacturing the same.Type: GrantFiled: December 10, 2014Date of Patent: August 29, 2017Assignee: MITSUBISHI MATERIALS CORPORATIONInventor: Toshiaki Ueda
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Patent number: 9700858Abstract: A continuous kneading device is provided with an upper trunk (1) to which a powder supply tube (3) through which quantified powder is supplied is connected and in which the powder is blended with a fluid, and a lower trunk (2) concentrically connected to the bottom of the upper trunk (1). The continuous kneading device continuously kneads the powder and the fluid by a first rotating kneading plate (10) built into the upper trunk (1) and a second rotating kneading plate (11) built into the lower trunk (2), wherein surfaces of the base metals of the first and second rotating kneading plates (10, 11) are covered with a coating material (50) for reducing friction when the powder and the fluid are kneaded together.Type: GrantFiled: March 23, 2012Date of Patent: July 11, 2017Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Mayumi Iwako, Masaaki Nakao, Ryuji Kitamura, Masakazu Abe, Toshiaki Ueda, Hiromichi Koizumi
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Publication number: 20170008772Abstract: The purpose of the present invention is to provide: a synthetic amorphous silica powder which is suitable as a raw material for a synthetic silica glass product used in a high-temperature and reduced-pressure environment, which can yield a synthetic silica product such that the occurrence or expansion of air bubbles in the glass product is inhibited even in use in a high-temperature and reduced-pressure environment, and which can be obtained at a relatively low cost; and a process for manufacturing the same.Type: ApplicationFiled: December 10, 2014Publication date: January 12, 2017Inventor: Toshiaki Ueda
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Patent number: 9446959Abstract: The synthetic amorphous silica powder of the present invention is obtained by applying a spheroidizing treatment to a granulated silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D50 of 10 to 2,000 ?m; wherein the synthetic amorphous silica powder has: a quotient of greater than 1.35 and not more than 1.75 obtained by dividing a BET specific surface area of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity of 0.50 to 0.75; and an unmolten ratio of greater than 0.25 and not more than 0.60.Type: GrantFiled: February 29, 2012Date of Patent: September 20, 2016Assignee: MITSUBISHI MATERIALS CORPORATIONInventor: Toshiaki Ueda
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Patent number: 9272918Abstract: The synthetic amorphous silica powder of the present invention is characterized in that it comprises a synthetic amorphous silica powder obtained by applying a spheroidizing treatment to a silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D50 of 10 to 2,000 ?m; wherein the synthetic amorphous silica powder has: a quotient of 1.00 to 1.35 obtained by dividing a BET specific surface area of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity of 0.75 to 1.00; and a spheroidization ratio of 0.55 to 1.00.Type: GrantFiled: December 24, 2010Date of Patent: March 1, 2016Assignee: MITSUBISHI MATERIALS CORPORATIONInventor: Toshiaki Ueda
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Publication number: 20160028055Abstract: Erroneous insertion of a battery into an imaging device is prevented. In a battery loading and unloading mechanism, a battery 2 is formed with projecting portions at longitudinal both ends of a back surface and along the back surface, the back surface being a surface opposite to an insertion surface of the battery, whereby even the battery formed in a flat rectangular parallelepiped and having the almost-square main surface can be prevented from being erroneously inserted into the device. The projecting portion has an inclined surface acutely inclined with respect to the back surface, and when the battery is unloaded from the device, unloading of the battery from the device is accelerated by the inclined surface undergoing contact pressure of the retaining means.Type: ApplicationFiled: October 1, 2015Publication date: January 28, 2016Inventors: Takayoshi Yamasaki, Hiroaki Sato, Toshiaki Ueda, Tomonori Watanabe, Yoichi Miyajima, Osamu Nagashima, Mieko Hara
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Publication number: 20150321939Abstract: The synthetic amorphous silica powder of the present invention is characterized in that it comprises a synthetic amorphous silica powder obtained by applying a spheroidizing treatment to a silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D50 of 10 to 2,000 ?m; wherein the synthetic amorphous silica powder has: a quotient of 1.00 to 1.35 obtained by dividing a BET specific surface area of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity of 0.75 to 1.00; and an unmolten ratio of 0.00 to 0.25.Type: ApplicationFiled: July 21, 2015Publication date: November 12, 2015Inventor: Toshiaki Ueda
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Patent number: 9178195Abstract: Erroneous insertion of a battery into an imaging device is prevented. In a battery loading and unloading mechanism, a battery is formed with projecting portions at longitudinal both ends of a back surface and along back surface, the back surface being a surface opposite to an insertion surface of the battery, whereby even the battery formed in a flat rectangular parallelepiped and having the almost-square main surface can be prevented from being erroneously inserted into the device. The projecting portion has an inclined surface acutely inclined with respect to the back surface, and when the battery is unloaded from the device, unloading of the battery from the device is accelerated by the inclined surface undergoing contact pressure of the retaining means.Type: GrantFiled: March 7, 2014Date of Patent: November 3, 2015Assignee: Sony CorporationInventors: Takayoshi Yamasaki, Hiroaki Sato, Toshiaki Ueda, Tomonori Watanabe, Yoichi Miyajima, Osamu Nagashima, Mieko Hara
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Patent number: 9120678Abstract: The synthetic amorphous silica powder of the present invention is characterized in that it comprises a synthetic amorphous silica powder obtained by applying a spheroidizing treatment to a silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D50 of 10 to 2,000 ?m; wherein the synthetic amorphous silica powder has: a quotient of 1.00 to 1.35 obtained by dividing a BET specific surface area of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity of 0.75 to 1.00; and an unmolten ratio of 0.00 to 0.25.Type: GrantFiled: December 24, 2010Date of Patent: September 1, 2015Assignee: MITSUBISHI MATERIALS CORPORATIONInventor: Toshiaki Ueda
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Patent number: 8883110Abstract: The synthetic amorphous silica powder of the present invention is characterized in that it comprises a synthetic amorphous silica powder obtained by applying a spheroidizing treatment to a granulated silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D50 of 10 to 2,000 ?m; wherein the synthetic amorphous silica powder has: a quotient between 1.35 exclusive and 1.75 inclusive obtained by dividing a BET specific surface area of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity between 0.50 inclusive and 0.75 inclusive; and a spheroidization ratio between 0.20 inclusive and 0.55 exclusive.Type: GrantFiled: December 27, 2010Date of Patent: November 11, 2014Assignee: Mitsubishi Materials CorporationInventor: Toshiaki Ueda
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Publication number: 20140205880Abstract: Erroneous insertion of a battery into an imaging device resulting from downsizing of the battery is prevented. In a battery loading and unloading mechanism for loading and unloading a battery 2 formed in a flat rectangular parallelepiped and having an almost square main surface to and from a device (an imaging device 1) to be detachably equipped with the battery 2, the battery 2 is formed with projecting portions 26, 27 at longitudinal both ends of a back surface thereof and along the back surface, the back surface being a surface opposite to an insertion surface of the battery inserted into the device, whereby even the battery formed in a flat rectangular parallelepiped and having the almost-square main surface can be prevented from being erroneously inserted into the device.Type: ApplicationFiled: March 7, 2014Publication date: July 24, 2014Applicant: Sony CorporationInventors: Takayoshi Yamasaki, Hiroaki Sato, Toshiaki Ueda, Tomonori Watanabe, Yoichi Miyajima, Osamu Nagashima, Mieko Hara