Abstract: Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of ?-diketones, ?-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, ?-hydroxy carboxylic acid, ?-hydroxy carbonyl derivatives, and hydrazone derivatives.

Abstract: A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: Ba1-xSrxTiyO3, wherein the molar ratio B/A of the composite oxide B to the composite metal oxide A is within the range of 0.002<B/A<0.05, and the molar ratio C/A of the composite oxide C to the composite metal oxide A is within the range of 0.002<C/A<0.03.

Abstract: An optical module is provided that includes a Faraday rotator having a Verdet constant at a wavelength of 1.06 ?m of at least 0.27 min/(Oe·cm), a first hollow magnet disposed on the outer periphery of the Faraday rotator, and second and third hollow magnet units disposed so as to sandwich the first hollow magnet on the optical axis. The second and third hollow magnet units include 2 or more magnets equally divided in a direction of 90 degrees relative to the optical axis. A magnetic flux density B (Oe) applied to the Faraday rotator is in the range of 0.5×104?B?1.5×104. The Faraday rotator is disposed on a sample length L (cm) in the range of 0.70?L?1.10, and has an external diameter D (cm) in the range of 0.20?D?0.60.

Abstract: A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane.

Abstract: A device includes a drive portion for driving a pressure generating element and controlling a state of driving the element. The drive portion includes a first drive section for causing a first current to flow to drive the element, and a second drive section for causing a second current smaller than the first current to flow to drive the element. The state of driving the element includes a first state and a second state. The second drive section causes the second current to flow in a direction in which the element is switched from the first state to the second state at a timing that is faster by a predetermined time determined in advance with respect to a timing at which the first drive section causes the first current to flow for switching the state of driving the element from the first state to the second state.

Abstract: A server stores multiple configuration data. A tester hardware is configured to be capable of changing at least a part of its functions according to configuration data stored in rewritable nonvolatile memory, to supply a power supply voltage to a DUT, to transmit a signal to the DUT, and to receive a signal from the DUT. An information technology equipment is configured such that, (i) when the test system is set up, the information technology equipment acquires the configuration data from the server according to the user's input, and writes the configuration data to the nonvolatile memory. Furthermore, the information technology equipment is configured such that, (ii) when the DUT is tested, the information technology equipment executes a test program so as to control the tester hardware, and to process data acquired by the tester hardware.

Abstract: A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane.

Abstract: A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane.

Abstract: A power transmitting device includes a power transmitting portion that contactlessly transmits electric power to a power receiving portion. The power transmitting portion has a resonance coil (24) and a tubular member (240) that faces the resonance coil (24). At least one portion of the tubular member (240) is electrically cut off.

Abstract: An optical isolator for use with a wavelength band of 600-800 nm is improved in that it has a Faraday rotator made of an oxide material in which said oxide material contains (TbxR1-x)2O3 such that 0.5?x?1.0, and R is scandium, yttrium or any lanthanoid but Tb.

Abstract: A vehicle includes a power receiving portion that contactlessly receives electric power from a power transmitting portion provided outside the vehicle and includes a shield member that is arranged around the power receiving portion in the same plane as a plane in which the power receiving portion is arranged, wherein the shield member includes a first shield region having a high shielding function and a second shield region having a shielding function lower than that of the first shield region at a position around the power receiving portion.

Abstract: In this process of forming a dielectric thin film, when a dielectric thin film represented by Ba1?xSrxTiyO3 (0.2<x<0.6 and 0.9<y<1.1) is formed by a sol-gel method, the process from coating to baking is carried out 2 to 9 times, the thickness of the thin film formed after the initial baking is 20 nm to 80 nm, the thickness of each thin film formed after the second baking and beyond is 20 nm to less than 200 nm, each baking from the first time to the second to ninth times is carried out by heating to a prescribed temperature within the range of 500° C. to 800° C. at a heating rate of 1° C. to 50° C./minute in an atmosphere at atmospheric pressure, and the total thickness of the dielectric thin film is 100 nm to 600 nm.

Abstract: It is an object to provide a small-sized optical isolator that is suitable as an optical isolator used in a semiconductor laser used in applications such as medical treatment or optical measurement The optical isolator for a wavelength band of 320 to 633 nm of the present invention comprises a Faraday device having a Verdet constant at a wavelength of 405 nm of at least 0.70 min/(Oe·cm), and a first hollow magnet disposed on the outer periphery of the Faraday device and second and third hollow magnet units disposed so as to sandwich the first hollow magnet on the optical axis, the second and third hollow magnet units comprising 2 or more magnets equally divided in a direction of 90 degrees relative to the optical axis, the Faraday device having applied thereto a magnetic flux density B (Oe) within the range of Expression (1) below, and a sample length L (cm) on which the Faraday device is disposed being within the range of Expression (2) below. 0.8×104?B?1.5×104??(1) 0.25?L?0.

Abstract: A LiCoO2 film-forming precursor solution is a precursor solution used to form a LiCoO2 film which is used as a positive electrode material of a thin film lithium secondary battery. In this LiCoO2 film-forming precursor solution, an organic lithium compound and an organic cobalt compound are dissolved in an organic solvent. In addition, the organic lithium compound is a lithium salt of a carboxylic acid represented by a formula CnH2n+1COOH (wherein, 2?n?8).

Abstract: A fiscal board receiving case is provided. A management board receiving case includes a case main body and a lid connected to the case main body and receives a management board on which a memory storing data including fiscal information and a management board-side connector are mounted. A control board receiving case includes a case main body and a lid connected to the case main body and receives a control board on which a controller and a control board-side connector connected to the management board-side connector are mounted. The management board receiving case and the control board receiving case are configured such that one box-like body that receives at least the management board is formed while the management board-side connector and the control board-side connector are connected to each other by engaging the management board receiving case with the control board receiving case through engagement members provided in the cases.

Abstract: A fluoroscopy apparatus including: an illumination unit having a light source radiating illumination light and excitation light onto an observation target, a fluorescence-imaging unit acquiring a fluorescence image by imaging fluorescence generated at the observation target by the excitation light, a white-light-imaging unit acquiring a reference image by imaging light returning from the observation target by the illumination light, and an image-correction unit obtaining a correction fluorescence image by raising the luminance value of the fluorescence image to the power of a reciprocal of a first and second exponent obtained by a power approximation of a distance characteristic of luminance versus observation distance, for the fluorescence image, and that obtains a corrected fluorescence image by dividing the correction fluorescence image by the correction reference image.

Abstract: An electric power reception device includes an electric power receiver that receives electric power in a non-contact manner from an electric power transmitter that is provided externally. The electric power receiver includes a first coil that is formed by winding a first coil wire with a pitch. The first coil includes a first portion and a second portion that are adjacent to the first portion with the pitch. The first portion and the second portion are arranged in a direction of arrangement.

Abstract: Provided is a liquid jet head in which a region of the liquid jet head on a side opposite to a liquid ejection side thereof is thinned to enhance efficiency of use of the region. A liquid jet head (1) includes an ejecting portion (3) for ejecting liquid in which first and second head chips (2a and 2b) are stacked, a circuit board (4) for supplying a drive signal for driving the ejecting portion (3), a first flexible printed circuit board (5a) for electrically connecting the first head chip (2a) and the circuit board (4) to each other, and a second flexible printed circuit board (5b) for electrically connecting the second head chip (2b) and the circuit board (4) to each other. The circuit board (4) and each of the first and second flexible printed circuit boards (5a and 5b) are electrically connected to each other on one surface (S) of the circuit board (4).

Abstract: A power transmitting device includes: a power transmitting portion that contactlessly transmits electric power to a power receiving portion spaced apart from the power transmitting portion; a first coil unit that is spaced apart from the power transmitting portion and that supplies electric power to the power transmitting portion; and a supply cable that is connected to the first coil unit and that supplies electric power from a power supply to the first coil unit. The first coil unit includes a first coil connected to the supply cable and a second coil connected to the first coil, and the first coil is arranged around, the power transmitting portion, converts unbalanced current, supplied from the power supply, to balanced current and supplies the balanced current to the second coil.

Abstract: In a thin film capacitor or the like, a dielectric thin film-forming composition capable of improving leakage current characteristics; and a method of forming a dielectric thin film using this composition are provided. Regarding a dielectric thin film-forming composition for forming a dielectric thin film, the dielectric thin film is formed of a barium strontium titanate (BST)-based complex perovskite film, and the composition is doped with aluminum (Al). In addition, a doping amount of the aluminum (Al) is in a range of 0.1 at % to 15 at % with respect to 100 at % of perovskite A site atoms contained in the composition.