Patents by Inventor Toshifumi Ishida

Toshifumi Ishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190190388
    Abstract: A switching power supply circuit includes an intermittent oscillation control circuit, which performs intermittent oscillation control that repeats a cycle including an oscillation time period and a stop time period according to a feedback signal so that output voltage or current becomes constant, compares an intermittent oscillation period that is a sum of the oscillation time period and the stop time period with a preset target period, sets the oscillation time period of current cycle to a length obtained by extending the oscillation time period of previous cycle by first predetermined time when the intermittent oscillation period is shorter than the target period, and sets the oscillation time period of current cycle to a length obtained by subtracting second predetermined time from the oscillation time period of previous cycle when the intermittent oscillation period is longer than the target period, in each cycle of intermittent oscillation control.
    Type: Application
    Filed: February 22, 2019
    Publication date: June 20, 2019
    Inventors: Takashi SAJI, Toshifumi ISHIDA
  • Publication number: 20180374687
    Abstract: A plasma processing apparatus according to one aspect includes a chamber body providing a chamber, the chamber body including a side wall, an opening being formed on the side wall, a stage provided in the chamber, a ceiling facing the stage, a gas supply system configured to supply a processing gas to the chamber, a power supply configured to supply electric power, and a wall that forms a processing space having a volume smaller than a volume of the chamber in the chamber. At least a part of the wall is movable between a position overlapping with a transport path extending between the processing space and the opening and a position not overlapping with the transport path, and the wall forms the processing space when the at least a part of the wall is disposed at the position overlapping with the transport path.
    Type: Application
    Filed: June 15, 2018
    Publication date: December 27, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masakatsu KASHIWAZAKI, Toshifumi ISHIDA, Hirofumi OHTA
  • Patent number: 9484213
    Abstract: A processing gas diffusing and supplying unit is provided in a substrate processing unit including a processing chamber for accommodating a substrate. The processing gas diffusing and supplying unit comprises a main body; a plate supported by the main body and having a plurality of gas supply holes; a partition wall; an internal space having a first and a second space partitioned by the partition wall; a first and a second opening respectively communicating with the first and the second space while facing the plate, first and a second space being connected to a first and a second processing gas introducing pipe of the processing chamber, respectively; and a first and a second shielding portion respectively installed in the first and the second space and having a surface facing the first and the second opening.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: November 1, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Toshifumi Ishida
  • Patent number: 9210791
    Abstract: The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: December 8, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Toshifumi Ishida, Daisuke Hayashi
  • Patent number: 9177839
    Abstract: A processing gas diffusing and supplying unit includes a supporting portion having an opening, a plate including gas supply holes, an internal space, between the supporting portion and the plate, communicating with the opening, and a cover part installed within the internal space and connected to the opening. The cover part includes a shielding portion which is disposed within the internal space and has a surface facing the opening, a side wall which holds the shielding portion, and a through hole formed at the side wall and communicating with the opening and the internal space. At least a portion of the gas supply holes is located right below the cover part and a height of the internal space is equal to or greater than 8 mm.
    Type: Grant
    Filed: March 6, 2009
    Date of Patent: November 3, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Toshifumi Ishida
  • Patent number: 9082593
    Abstract: An electrode having a gas discharge function, where the degree of freedom related to a maximum gas flow rate is abundant, an electrode cover member may be thinned, and a change of a gas behavior according to time is difficult to be generated in a processing chamber during gas introduction. The electrode includes: a base material having a plurality of gas holes; and an electrode cover member having a plurality of gas holes respectively corresponding to the plurality of gas holes of the base material in a one-to-one manner, fixed to the base material, and disposed facing a processing space in which the object is plasma-processed, wherein a gas hole diameter of the electrode cover member is larger than a gas hole diameter of the base material.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: July 14, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Daisuke Hayashi, Toshifumi Ishida, Norihiko Amikura
  • Publication number: 20150187542
    Abstract: Abnormal discharge is suppressed from occurring within a chamber. A plasma processing apparatus 1 includes a cylindrical chamber 10 having an opening 51 through which a processing target substrate is loaded into the chamber; a deposition shield 71 which is provided along an inner wall of the chamber 10 and has an opening 71a at a position corresponding to the opening 51; and a shutter 55, having a plate shape, configured to open and close the opening 71a. Further, in a state that the opening 71a is closed by the shutter 55, an outer periphery of the shutter 55 is overlapped with the deposition shield 71 in a thickness direction of the shutter 55 and an inner periphery of the opening 71a is overlapped with the shutter 55 in the thickness direction of the shutter 55.
    Type: Application
    Filed: December 23, 2014
    Publication date: July 2, 2015
    Inventor: Toshifumi Ishida
  • Patent number: 8319141
    Abstract: The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.
    Type: Grant
    Filed: September 7, 2010
    Date of Patent: November 27, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Toshifumi Ishida, Daisuke Hayashi
  • Publication number: 20120247673
    Abstract: An electrode having a gas discharge function, where the degree of freedom related to a maximum gas flow rate is abundant, an electrode cover member may be thinned, and a change of a gas behavior according to time is difficult to be generated in a processing chamber during gas introduction. The electrode includes: a base material having a plurality of gas holes; and an electrode cover member having a plurality of gas holes respectively corresponding to the plurality of gas holes of the base material in a one-to-one manner, fixed to the base material, and disposed facing a processing space in which the object is plasma-processed, wherein a gas hole diameter of the electrode cover member is larger than a gas hole diameter of the base material.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 4, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Daisuke HAYASHI, Toshifumi ISHIDA, Norihiko AMIKURA
  • Publication number: 20110000894
    Abstract: The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.
    Type: Application
    Filed: September 7, 2010
    Publication date: January 6, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toshifumi ISHIDA, Daisuke Hayashi
  • Publication number: 20100240154
    Abstract: Provided is a temperature control device for controlling a temperature of a member to be exposed to plasma in a substrate processing apparatus. The substrate processing apparatus includes a mounting electrode for mounting a target substrate and a facing electrode positioned to face the mounting electrode, excites a processing gas supplied between the mounting electrode and the facing electrode into plasma, and performs a plasma process on the target substrate with the plasma. The temperature control device includes a heating layer configured to heat a heating target member, a heat insulating layer positioned in contact with an opposite surface to a heating layer's surface facing the heating target member, and a cooling layer positioned in contact with an opposite surface to a heat insulating layer's surface facing the heating layer.
    Type: Application
    Filed: March 18, 2010
    Publication date: September 23, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Toshifumi Ishida
  • Publication number: 20090223449
    Abstract: A cover part is provided in a substrate processing apparatus including a processing chamber for accommodating a substrate, a processing gas diffusing and supplying unit, and a processing gas introducing pipe for introducing the processing gas into the processing gas diffusing and supplying unit. The processing gas diffusing and supplying unit includes an internal space formed therein and widening in parallel to a surface of the substrate accommodated in the processing chamber and gas holes allowing the internal space to communicate with the processing chamber. The processing gas introducing pipe is connected to the internal space via an opening, the opening facing a portion of the gas holes. The cover part covering the opening includes a shielding portion which is disposed within the internal space and has a surface facing the opening and a holding portion which holds the shielding portion at a predetermined position.
    Type: Application
    Filed: March 6, 2009
    Publication date: September 10, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Toshifumi ISHIDA
  • Publication number: 20070210037
    Abstract: The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.
    Type: Application
    Filed: February 21, 2007
    Publication date: September 13, 2007
    Inventors: Toshifumi Ishida, Daisuke Hayashi
  • Publication number: 20050000442
    Abstract: An upper electrode for use in generating a plasma of a processing gas includes a cooling block having a coolant path for circulating a coolant therethrough and one or more through holes for passing the processing gas therethrough, an electrode plate having one or more injection openings for injecting the processing gas toward the substrate to be processed mounted on the mounting table, and an electrode frame installed at an upper portion of the cooling block and providing a processing gas diffusion gap for diffusing the processing gas between the cooling block and the electrode frame. The electrode plate is detachably fixed to a bottom surface of the cooling block via a thermally conductive member having flexibility.
    Type: Application
    Filed: May 13, 2004
    Publication date: January 6, 2005
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Daisuke Hayashi, Toshifumi Ishida, Shigetoshi Kimura