Abstract: Provided is a toner containing toner particles, each of which includes a binder resin containing a polyester as a main component, a colorant, and a wax, in which the binder resin includes a block polymer in which a segment capable of forming a crystalline structure and a segment incapable of forming a crystalline structure are bonded, the toner has a maximum endothermic peak from the binder resin, as determined by differential scanning calorimetry measurement, with a peak temperature in a specific range and with an endothermic quantity in a specific range, and the wax is an ester wax having a functionality of 3 or more.

Abstract: Provided is a toner containing toner particles, each of which includes a binder resin containing a polyester as a main component, a colorant, and a wax, in which the binder resin includes a block polymer in which a segment capable of forming a crystalline structure and a segment incapable of forming a crystalline structure are bonded, the toner has a maximum endothermic peak from the binder resin, as determined by differential scanning calorimetry measurement, with a peak temperature in a specific range and with an endothermic quantity in a specific range, and the wax is an ester wax having a functionality of 3 or more.

Abstract: Silicon loss prevention in a substrate during transistor device element manufacture is achieved by limiting a number of photoresist mask and chemical oxide layer stripping opportunities during the fabrication process. This can be achieved through the use of a protective layer that remains on the substrate during formation and stripping of photoresist masks used in identifying the implant areas into the substrate. In addition, undesirable reworking steps due to photoresist mask misalignment are eliminated or otherwise have no effect on consuming silicon from the substrate during fabrication of device elements. In this manner, device elements with the same operating characteristics and performance can be consistently made from lot to lot.

Abstract: Provided is a toner having an excellent low-temperature fixability and hot offset resistance, a broad fixing temperature latitude in low-temperature areas to high-temperature areas, and a high heat-resistant storage stability. The toner includes toner particles having a core-shell structure in which a shell phase containing a resin A is formed on a core containing a binder resin, a colorant and a wax. In measurement of resin A by a differential scanning calorimetry (DSC), the peak temperature TpA (° C.) of a maximum endothermic peak in the first temperature rise is at least 55° C. but not more than 80° C. In measurement of a viscoelasticity of resin A, the loss elastic modulus at TpA?10 (° C.) is at least 1×107 Pa but not more than 1×108 Pa. In measurement of the viscoelasticity of resin A, the loss elastic moduli at TpA (° C.), TpA+10 (° C.) and TpA+25 (° C.) satisfy specific conditions.

Abstract: An information display system for a vehicle is provided. In the information display system, a display device changes a position of a display screen by retracting a portion of a display screen from a visible space to an in invisible space and deploying the retracted portion of the display screen from the invisible space to the visible space. In accordance with the position of the display screen in the display device, a display controller changes information displayed on an effective display region of the display screen.

Abstract: Provided is a toner comprising a toner particle having a core-shell structure in which a shell phase containing a resin A is formed on a core that contains a binder resin, a colorant and a wax, wherein the resin A is a vinyl resin prepared by copolymerizing a vinyl monomer X that has an organopolysiloxane structure and a vinyl monomer Y that has a polyester segment capable of forming a crystalline structure; the content of the vinyl monomer X in a total monomer used for the copolymerization is in a particular range; the toner particle contains resin A in a particular proportion; and the binder resin contains a crystalline resin.

Abstract: Provided is a toner that is excellent in terms of low-temperature fixability and hot offset resistance, has a wide fixing temperature range from a low-temperature region to a high-temperature region, and has high thermal storability. When the toner is measured with a capillary rheometer, t(1) is 60 seconds or more and t(5) is 30 seconds or less and the toner satisfies the following formulae (1) and (2) 65.0[° C.]?T(5)?90.0[° C.]??(1) 4.5?t(1)/t(5)?10.0??(2).

Abstract: The effects of knock-on oxide in a semiconductor substrate are reduced by providing a semiconductor substrate and forming a thin layer of native oxide on the semiconductor substrate. Ion implantation is performed through the native oxide layer. The native oxide layer reduces the phenomenon of knock-on oxide and oxygen concentration within the semiconductor substrate. Further reduction may be achieved by etching the surface of the semiconductor substrate in order to eliminate a concentration of oxygen at a surface of the semiconductor substrate.

Abstract: A protection film is formed on a semiconductor substrate. Impurity ions are implanted into the semiconductor substrate through the protection film. The impurity is activated to form an impurity layer. The protection film is removed after forming the impurity layer. The semiconductor substrate of a surface portion of the impurity layer is removed after removing the protection film. A semiconductor layer is epitaxially grown above the semiconductor substrate after removing the semiconductor substrate of the surface portion of the impurity layer.

Abstract: A multilayer film according to the present invention is a multilayer film, in which an outermost layer and an innermost layer are laminated via an intermediate layer arranged from one to three layers, with the intermediate layer including at least one layer being made of 0 to 55 weight % of a linear polyethylene having a density of 0.910 to 0.930 g/cm3, 5 to 15 weight % of a high-density polyethylene having a density of 0.950 to 0.970 g/cm3, and 35 to 85 weight % of a linear polyethylene having a density of 0.900 to 0.910 g/cm3 and polymerized using a single-site catalyst, and having a density lower than the outermost layer and the innermost layer, and each of the outermost layer and the innermost layer being formed of a polyethylene or a mixture of two or more types of polyethylene.

Abstract: A high-efficiency, white organic electroluminescent device has such a structure that its emission layer is obtained by laminating sub-emission layers of red, green, and blue, respectively. The green sub-emission layer contacting a hole transport layer has a delayed fluorescent material, and the red sub-emission layer has a phosphorescent light emitting material.

Abstract: An organic electroluminescent display apparatus having organic electroluminescent devices each of which is excellent in color reproducibility and has high emission efficiency in which green organic electroluminescent devices each have a delayed fluorescent material and a microcavity, and the hole transport layer of each of the devices has the same thickness as that of the hole transport layer of each of blue organic electroluminescent devices.

Abstract: An image display system has an operating device, a specifying device and an image display device. If the operating device receives a single operation from an exterior (i.e., from user), the operating device outputs first and second signals based on the single operation. The specifying device specifies a viewpoint and a sight line direction to look down a picture based on the first and second signals outputted by the operating device. The image display device displays an image of the picture in such a manner that the picture is looked down from the viewpoint in the sight line direction specified by the specifying device. As a result, the operation for adjusting the viewpoint and the sight line direction is facilitated.

Abstract: Provided is an organic EL display apparatus including an organic EL device having a delayed fluorescence material which has good internal quantum efficiency and an organic EL device having a phosphorescent material. A soaking unit is provided in a plane in which the organic EL devices are provided.

Abstract: Provided is an organic EL display apparatus which can be driven at a low voltage and in which a red-light-emitting device uses a phosphorescent material, a green-light-emitting device uses a delayed fluorescent material, and the same material is used in the hole transport layers of the respective devices.

Abstract: A high-efficiency, white organic electroluminescent device has such a structure that its emission layer is obtained by laminating sub-emission layers of red, green, and blue, respectively. The green sub-emission layer contacting a hole transport layer has a delayed fluorescent material, and the red sub-emission layer has a phosphorescent light emitting material.

Abstract: An organic electroluminescent display apparatus having organic electroluminescent devices each of which is excellent in color reproducibility and has high emission efficiency in which green organic electroluminescent devices each have a delayed fluorescent material and a microcavity, and the hole transport layer of each of the devices has the same thickness as that of the hole transport layer of each of blue organic electroluminescent devices.

Abstract: Provided is an organic EL display apparatus including an organic EL device having a delayed fluorescence material which has good internal quantum efficiency and an organic EL device having a phosphorescent material. A soaking unit is provided in a plane in which the organic EL devices are provided.

Abstract: There is provided a semiconductor device having a device isolation region of STI structure formed on a silicon substrate so as to define a device region, wherein the device isolation region comprises a device isolation trench formed in the silicon substrate, and a device isolation insulation film filling the device isolation trench. At least a surface part of the device isolation insulation film is formed of an HF-resistant film.

Abstract: Compression stress applying portions 20 of SiGe film are formed in the source/drain regions of the p-MOSA region 30a. Then, impurities are implanted in the p-MOS region 30a and the n-MOS region 30b to form shallow junction regions 22a, 22b and deep junction regions 23a, 23b. The impurity in the shallow junction regions 22a, 22b is prevented from being diffused immediately below the gate insulation film 15 by the thermal processing in forming the SiGe film, the short channel effect is prevented, and the hole mobility of the channel region of the p-MOS transistor 14a. The operation speed of the p-MOS transistor 13a is balanced with that of the n-MOS transistor, whereby the operation speed of the complementary semiconductor device 10 can be increased. The semiconductor device fabricating method can increase and balance the operation speed of a p-transistor with that of an n-transistor.