Abstract: A target object processing method is provided for processing a target object using a plasma processing apparatus including a processing chamber, a mounting table which is disposed in the processing chamber and on which the target object is mounted, an outer peripheral member disposed around the mounting table, and a first voltage application device configured to apply a voltage to the outer peripheral member. The method comprises preparing the target object having an etching target film and a patterned mask formed on the etching target film, and processing the mask. The step of processing the mask includes supplying a first processing gas containing a first rare gas to the processing chamber, and a first plasma processing for processing the mask positioned at an outer peripheral portion of the target object using plasma of the first processing gas while applying a DC voltage to the outer peripheral member.

Abstract: In a plasma processing method, a position in height direction of an upper surface of a focus ring surrounding an edge of a substrate mounted on a supporting table in a chamber of a plasma processing apparatus is set such that the position in height direction of the upper surface of the focus ring mounted on a mounting region of the supporting table is lower than a reference position that is a position in a height direction of an upper surface of the substrate. Plasma is generated in the chamber to perform plasma processing on the substrate in a state where the position in the height direction of the upper surface of the focus ring is maintained. A negative DC voltage is applied to the focus ring in a state where the position in height direction of the upper surface of the focus ring is maintained during the plasma generation.

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a controller. The substrate support includes a lower electrode and is disposed in the chamber to mount a focus ring to surround a disposed substrate on the substrate support. The radio-frequency power supply supplies a bias radio-frequency power to the lower electrode. The controller causes specifying a power level of the bias radio-frequency power corresponding to a specified value of the DC potential of the focus ring by using a table or a function that defines a relationship between the power level of the bias radio-frequency power and the DC potential of the focus ring generated by supplying the bias radio-frequency power to the lower electrode, and controlling the radio-frequency power supply to supply the bias radio-frequency power having the specified power level to the lower electrode during a plasma generation in the chamber.

Abstract: An apparatus of plasma processing includes a substrate support and a focus ring that are arranged in a chamber. The focus ring surrounds a substrate on the substrate support. The focus ring has a first region and a second region. The first region includes an inner top surface of the focus ring. The second region includes an outer top surface of the focus ring. The inner top surface extends at a position closer to the central axis of the focus ring than the outer top surface. The focus ring is configured such that an absolute value of a negative DC bias potential in the first region becomes greater than an absolute value of a DC potential in the second region during plasma generation in the chamber.

Abstract: A cleaning method is provided. In the cleaning method, a cleaning gas is supplied into a processing chamber, a radio frequency (RF) power for plasma generation is applied to one of a first electrode on which a substrate is to be mounted and a second electrode disposed to be opposite to the first electrode in the processing chamber, and a negative voltage is applied to an edge ring disposed to surround the substrate. Further, plasma is generated from the cleaning gas and a cleaning process using the plasma is performed.

Abstract: A cleaning method is provided. In the cleaning method, a cleaning gas is supplied into a processing chamber, a radio frequency (RF) power for plasma generation is applied to one of a first electrode on which a substrate is to be mounted and a second electrode disposed to be opposite to the first electrode in the processing chamber, and a negative voltage is applied to an edge ring disposed to surround the substrate. Further, plasma is generated from the cleaning gas and a cleaning process using the plasma is performed.

Abstract: In a plasma processing method, a position in height direction of an upper surface of a focus ring surrounding an edge of a substrate mounted on a supporting table in a chamber of a plasma processing apparatus is set such that the position in height direction of the upper surface of the focus ring mounted on a mounting region of the supporting table is lower than a reference position that is a position in a height direction of an upper surface of the substrate. Plasma is generated in the chamber to perform plasma processing on the substrate in a state where the position in the height direction of the upper surface of the focus ring is maintained. A negative DC voltage is applied to the focus ring in a state where the position in height direction of the upper surface of the focus ring is maintained during the plasma generation.

Abstract: An apparatus of plasma processing includes a substrate support and a focus ring that are arranged in a chamber. The focus ring surrounds a substrate on the substrate support. The focus ring has a first region and a second region. The first region includes an inner top surface of the focus ring. The second region includes an outer top surface of the focus ring. The inner top surface extends at a position closer to the central axis of the focus ring than the outer top surface. The focus ring is configured such that an absolute value of a negative DC bias potential in the first region becomes greater than an absolute value of a DC potential in the second region during plasma generation in the chamber.

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a controller. The substrate support includes a lower electrode and is disposed in the chamber to mount a focus ring to surround a disposed substrate on the substrate support. The radio-frequency power supply supplies a bias radio-frequency power to the lower electrode. The controller causes specifying a power level of the bias radio-frequency power corresponding to a specified value of the DC potential of the focus ring by using a table or a function that defines a relationship between the power level of the bias radio-frequency power and the DC potential of the focus ring generated by supplying the bias radio-frequency power to the lower electrode, and controlling the radio-frequency power supply to supply the bias radio-frequency power having the specified power level to the lower electrode during a plasma generation in the chamber.

Abstract: In a plasma processing method, a position in height direction of an upper surface of a focus ring surrounding an edge of a substrate mounted on a supporting table in a chamber of a plasma processing apparatus is set such that the position in height direction of the upper surface of the focus ring mounted on a mounting region of the supporting table is lower than a reference position that is a position in a height direction of an upper surface of the substrate. Plasma is generated in the chamber to perform plasma processing on the substrate in a state where the position in the height direction of the upper surface of the focus ring is maintained. A negative DC voltage is applied to the focus ring in a state where the position in height direction of the upper surface of the focus ring is maintained during the plasma generation.

Abstract: A target object processing method is provided for processing a target object using a plasma processing apparatus including a processing chamber, a mounting table which is disposed in the processing chamber and on which the target object is mounted, an outer peripheral member disposed around the mounting table, and a first voltage application device configured to apply a voltage to the outer peripheral member. The method comprises preparing the target object having an etching target film and a patterned mask formed on the etching target film, and processing the mask. The step of processing the mask includes supplying a first processing gas containing a first rare gas to the processing chamber, and a first plasma processing for processing the mask positioned at an outer peripheral portion of the target object using plasma of the first processing gas while applying a DC voltage to the outer peripheral member.

Abstract: In a plasma processing method, a position in height direction of an upper surface of a focus ring surrounding an edge of a substrate mounted on a supporting table in a chamber of a plasma processing apparatus is set such that the position in height direction of the upper surface of the focus ring mounted on a mounting region of the supporting table is lower than a reference position that is a position in a height direction of an upper surface of the substrate. Plasma is generated in the chamber to perform plasma processing on the substrate in a state where the position in the height direction of the upper surface of the focus ring is maintained. A negative DC voltage is applied to the focus ring in a state where the position in height direction of the upper surface of the focus ring is maintained during the plasma generation.

Abstract: Disclosed is a processing method that removes moisture in a low permittivity film formed on a substrate to be processed which has a damaged layer on the surface thereof while maintaining the specific permittivity or a leakage current value low when the film is subjected to a recovery processing. The method for the recovery processing includes applying, on the damaged layer of the low permittivity film, a first processing gas whose molecules are small sufficient to permeate the inside of the damaged layer of the low permittivity film and which is able to remove the moisture in the damaged layer and a second processing gas which forms a hydrophobic dense reformatted layer on the surface of the damaged layer, thereby allowing the first processing gas and the second processing gas to react with the damaged layer.

Abstract: In a plasma processing method, a conductor of an electrostatic chuck (ESC) and an electrode are electrically grounded prior to starting the plasma processing. A DC voltage with a polarity is applied to the conductor at a first time point after loading a substrate on the electrode. Then, the electrode is switched from an electrically grounded state to an electrically floating state at a second time point. A RF power is then applied to the electrode at a third time point. The application of the RF power is stopped at a fourth time point after a specified time has lapsed from the third time point. Then, the electrode is switched from the electrically floating state to the electrically grounded state at a fifth time point. Thereafter, the application of the DC voltage is stopped and the conductor is restored to a ground potential at a sixth time point.

Abstract: Disclosed is a processing method that removes moisture in a low permittivity film formed on a substrate to be processed which has a damaged layer on the surface thereof while maintaining the specific permittivity or a leakage current value low when the film is subjected to a recovery processing. The method for the recovery processing includes applying, on the damaged layer of the low permittivity film, a first processing gas whose molecules are small sufficient to permeate the inside of the damaged layer of the low permittivity film and which is able to remove the moisture in the damaged layer and a second processing gas which forms a hydrophobic dense reformatted layer on the surface of the damaged layer, thereby allowing the first processing gas and the second processing gas to react with the damaged layer.

Abstract: A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.

Abstract: A focus ring of a ring shape is disposed to surround a target substrate on a lower electrode on which the target substrate is mounted in a process chamber. The process chamber receives the target substrate and subjects the received target substrate to a plasma process. At the point of time when the focus ring is first used for the plasma process, a distance between a lower side of an edge portion of the target substrate and a portion of the focus ring facing the lower side of the edge portion of the target substrate is set to be equal to or greater than about 0.4 mm.

Abstract: In a plasma processing method, a conductor of an electrostatic chuck (ESC) and an electrode are electrically grounded prior to starting the plasma processing. A DC voltage with a polarity is applied to the conductor at a first time point after loading a substrate on the electrode. Then, the electrode is switched from an electrically grounded state to an electrically floating state at a second time point. A RF power is then applied to the electrode at a third time point. The application of the RF power is stopped at a fourth time point after a specified time has lapsed from the third time point. Then, the electrode is switched from the electrically floating state to the electrically grounded state at a fifth time point. Thereafter, the application of the DC voltage is stopped and the conductor is restored to a ground potential at a sixth time point.

Abstract: A plasma processing apparatus includes an radio frequency (RF) power supply for applying an RF power for generating a plasma to at least one of an upper and a lower electrode which are disposed to face each other in a processing chamber, a high voltage power supply for applying a high voltage to the lower electrode to electrostatically adsorb the substrate to be held thereon and a control unit for controlling the RF power supply and the high voltage power supply. The control unit controls the high voltage power supply so as to apply a high voltage equal to or less than ?1500 V to the lower electrode.

Abstract: In a plasma apparatus 1 for performing plasma processing on a substrate W to be processed, an upper electrode 21, which faces opposite a susceptor 5 which is a lower electrode, has an electrode supporting body 22 and an electrode plate 23. In the center on the side of the electrode supporting body at the boundary between the two, a hollow 62, the dimensions of which are determined such that a resonance is generated at a frequency of supplied high-frequency electric power and an electric field orthogonal to the electrode plate 23 is generated inside, is provided. Furthermore, a shield ring which surrounds the electrode plate 23 has a shape in which the lower surface is in the same level as the electrode plate 23, and it is made of a material that is not easily eroded by the plasma. By this, processing small features becomes possible with uniform distribution of plasma and in less degradation due to change over time.