Patents by Inventor Toshifumi Nagaiwa

Toshifumi Nagaiwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200303170
    Abstract: In a plasma processing method, a position in height direction of an upper surface of a focus ring surrounding an edge of a substrate mounted on a supporting table in a chamber of a plasma processing apparatus is set such that the position in height direction of the upper surface of the focus ring mounted on a mounting region of the supporting table is lower than a reference position that is a position in a height direction of an upper surface of the substrate. Plasma is generated in the chamber to perform plasma processing on the substrate in a state where the position in the height direction of the upper surface of the focus ring is maintained. A negative DC voltage is applied to the focus ring in a state where the position in height direction of the upper surface of the focus ring is maintained during the plasma generation.
    Type: Application
    Filed: June 10, 2020
    Publication date: September 24, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Toshifumi NAGAIWA
  • Publication number: 20200286737
    Abstract: An apparatus of plasma processing includes a substrate support and a focus ring that are arranged in a chamber. The focus ring surrounds a substrate on the substrate support. The focus ring has a first region and a second region. The first region includes an inner top surface of the focus ring. The second region includes an outer top surface of the focus ring. The inner top surface extends at a position closer to the central axis of the focus ring than the outer top surface. The focus ring is configured such that an absolute value of a negative DC bias potential in the first region becomes greater than an absolute value of a DC potential in the second region during plasma generation in the chamber.
    Type: Application
    Filed: June 10, 2019
    Publication date: September 10, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Toshifumi NAGAIWA
  • Publication number: 20200266035
    Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a controller. The substrate support includes a lower electrode and is disposed in the chamber to mount a focus ring to surround a disposed substrate on the substrate support. The radio-frequency power supply supplies a bias radio-frequency power to the lower electrode. The controller causes specifying a power level of the bias radio-frequency power corresponding to a specified value of the DC potential of the focus ring by using a table or a function that defines a relationship between the power level of the bias radio-frequency power and the DC potential of the focus ring generated by supplying the bias radio-frequency power to the lower electrode, and controlling the radio-frequency power supply to supply the bias radio-frequency power having the specified power level to the lower electrode during a plasma generation in the chamber.
    Type: Application
    Filed: June 3, 2019
    Publication date: August 20, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Toshifumi NAGAIWA
  • Patent number: 10714318
    Abstract: In a plasma processing method, a position in height direction of an upper surface of a focus ring surrounding an edge of a substrate mounted on a supporting table in a chamber of a plasma processing apparatus is set such that the position in height direction of the upper surface of the focus ring mounted on a mounting region of the supporting table is lower than a reference position that is a position in a height direction of an upper surface of the substrate. Plasma is generated in the chamber to perform plasma processing on the substrate in a state where the position in the height direction of the upper surface of the focus ring is maintained. A negative DC voltage is applied to the focus ring in a state where the position in height direction of the upper surface of the focus ring is maintained during the plasma generation.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: July 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Toshifumi Nagaiwa
  • Publication number: 20200144034
    Abstract: A target object processing method is provided for processing a target object using a plasma processing apparatus including a processing chamber, a mounting table which is disposed in the processing chamber and on which the target object is mounted, an outer peripheral member disposed around the mounting table, and a first voltage application device configured to apply a voltage to the outer peripheral member. The method comprises preparing the target object having an etching target film and a patterned mask formed on the etching target film, and processing the mask. The step of processing the mask includes supplying a first processing gas containing a first rare gas to the processing chamber, and a first plasma processing for processing the mask positioned at an outer peripheral portion of the target object using plasma of the first processing gas while applying a DC voltage to the outer peripheral member.
    Type: Application
    Filed: November 5, 2019
    Publication date: May 7, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Seiji Yokoyama, Taichi Okano, Sho Oikawa, Shunichi Kawasaki, Toshifumi Nagaiwa
  • Publication number: 20190267217
    Abstract: In a plasma processing method, a position in height direction of an upper surface of a focus ring surrounding an edge of a substrate mounted on a supporting table in a chamber of a plasma processing apparatus is set such that the position in height direction of the upper surface of the focus ring mounted on a mounting region of the supporting table is lower than a reference position that is a position in a height direction of an upper surface of the substrate. Plasma is generated in the chamber to perform plasma processing on the substrate in a state where the position in the height direction of the upper surface of the focus ring is maintained. A negative DC voltage is applied to the focus ring in a state where the position in height direction of the upper surface of the focus ring is maintained during the plasma generation.
    Type: Application
    Filed: February 22, 2019
    Publication date: August 29, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Toshifumi NAGAIWA
  • Patent number: 9059103
    Abstract: Disclosed is a processing method that removes moisture in a low permittivity film formed on a substrate to be processed which has a damaged layer on the surface thereof while maintaining the specific permittivity or a leakage current value low when the film is subjected to a recovery processing. The method for the recovery processing includes applying, on the damaged layer of the low permittivity film, a first processing gas whose molecules are small sufficient to permeate the inside of the damaged layer of the low permittivity film and which is able to remove the moisture in the damaged layer and a second processing gas which forms a hydrophobic dense reformatted layer on the surface of the damaged layer, thereby allowing the first processing gas and the second processing gas to react with the damaged layer.
    Type: Grant
    Filed: March 23, 2012
    Date of Patent: June 16, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Wataru Shimizu, Kiyoshi Maeda, Toshifumi Nagaiwa
  • Patent number: 8277673
    Abstract: In a plasma processing method, a conductor of an electrostatic chuck (ESC) and an electrode are electrically grounded prior to starting the plasma processing. A DC voltage with a polarity is applied to the conductor at a first time point after loading a substrate on the electrode. Then, the electrode is switched from an electrically grounded state to an electrically floating state at a second time point. A RF power is then applied to the electrode at a third time point. The application of the RF power is stopped at a fourth time point after a specified time has lapsed from the third time point. Then, the electrode is switched from the electrically floating state to the electrically grounded state at a fifth time point. Thereafter, the application of the DC voltage is stopped and the conductor is restored to a ground potential at a sixth time point.
    Type: Grant
    Filed: July 31, 2009
    Date of Patent: October 2, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Tsujimoto, Toshifumi Nagaiwa, Yuji Otsuka
  • Publication number: 20120244720
    Abstract: Disclosed is a processing method that removes moisture in a low permittivity film formed on a substrate to be processed which has a damaged layer on the surface thereof while maintaining the specific permittivity or a leakage current value low when the film is subjected to a recovery processing. The method for the recovery processing includes applying, on the damaged layer of the low permittivity film, a first processing gas whose molecules are small sufficient to permeate the inside of the damaged layer of the low permittivity film and which is able to remove the moisture in the damaged layer and a second processing gas which forms a hydrophobic dense reformatted layer on the surface of the damaged layer, thereby allowing the first processing gas and the second processing gas to react with the damaged layer.
    Type: Application
    Filed: March 23, 2012
    Publication date: September 27, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Wataru SHIMIZU, Kiyoshi MAEDA, Toshifumi NAGAIWA
  • Patent number: 7732340
    Abstract: A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.
    Type: Grant
    Filed: August 8, 2006
    Date of Patent: June 8, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Toshifumi Nagaiwa, Junichi Sasaki, Stefan Sawusch
  • Publication number: 20100041240
    Abstract: A focus ring of a ring shape is disposed to surround a target substrate on a lower electrode on which the target substrate is mounted in a process chamber. The process chamber receives the target substrate and subjects the received target substrate to a plasma process. At the point of time when the focus ring is first used for the plasma process, a distance between a lower side of an edge portion of the target substrate and a portion of the focus ring facing the lower side of the edge portion of the target substrate is set to be equal to or greater than about 0.4 mm.
    Type: Application
    Filed: August 11, 2009
    Publication date: February 18, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hiroshi TSUJIMOTO, Toshifumi Nagaiwa, Tatsuya Handa
  • Publication number: 20100025372
    Abstract: In a plasma processing method, a conductor of an electrostatic chuck (ESC) and an electrode are electrically grounded prior to starting the plasma processing. A DC voltage with a polarity is applied to the conductor at a first time point after loading a substrate on the electrode. Then, the electrode is switched from an electrically grounded state to an electrically floating state at a second time point. A RF power is then applied to the electrode at a third time point. The application of the RF power is stopped at a fourth time point after a specified time has lapsed from the third time point. Then, the electrode is switched from the electrically floating state to the electrically grounded state at a fifth time point. Thereafter, the application of the DC voltage is stopped and the conductor is restored to a ground potential at a sixth time point.
    Type: Application
    Filed: July 31, 2009
    Publication date: February 4, 2010
    Applicant: TOKYO ELECTON LIMITED
    Inventors: Hiroshi Tsujimoto, Toshifumi Nagaiwa, Yuji Otsuka
  • Publication number: 20090242128
    Abstract: A plasma processing apparatus includes an radio frequency (RF) power supply for applying an RF power for generating a plasma to at least one of an upper and a lower electrode which are disposed to face each other in a processing chamber, a high voltage power supply for applying a high voltage to the lower electrode to electrostatically adsorb the substrate to be held thereon and a control unit for controlling the RF power supply and the high voltage power supply. The control unit controls the high voltage power supply so as to apply a high voltage equal to or less than ?1500 V to the lower electrode.
    Type: Application
    Filed: March 26, 2009
    Publication date: October 1, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kenji TAGO, Hiroshi Tsuchiya, Yuji Otsuka, Hiroshi Tsumjimoto, Toshifumi Nagaiwa, Tsuyoshi Yoshida
  • Publication number: 20080156441
    Abstract: In a plasma apparatus 1 for performing plasma processing on a substrate W to be processed, an upper electrode 21, which faces opposite a susceptor 5 which is a lower electrode, has an electrode supporting body 22 and an electrode plate 23. In the center on the side of the electrode supporting body at the boundary between the two, a hollow 62, the dimensions of which are determined such that a resonance is generated at a frequency of supplied high-frequency electric power and an electric field orthogonal to the electrode plate 23 is generated inside, is provided. Furthermore, a shield ring which surrounds the electrode plate 23 has a shape in which the lower surface is in the same level as the electrode plate 23, and it is made of a material that is not easily eroded by the plasma. By this, processing small features becomes possible with uniform distribution of plasma and in less degradation due to change over time.
    Type: Application
    Filed: February 29, 2008
    Publication date: July 3, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Ogasawara, Kazuya Kato, Toshifumi Nagaiwa, Kosuke Imafuku, Koichi Kazama
  • Publication number: 20080038673
    Abstract: A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.
    Type: Application
    Filed: August 8, 2006
    Publication date: February 14, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toshifumi Nagaiwa, Junichi Sasaki, Stefan Sawusch
  • Patent number: 6723202
    Abstract: A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.
    Type: Grant
    Filed: April 24, 2001
    Date of Patent: April 20, 2004
    Assignee: Tokyo Electron Limited
    Inventors: Toshifumi Nagaiwa, Shuei Sekizawa, Kosuke Imafuku, Jun Ooyabu
  • Publication number: 20030155078
    Abstract: In a plasma apparatus 1 for performing plasma processing on a substrate W to be processed, an upper electrode 21, which faces opposite a susceptor 5 which is a lower electrode, has an electrode supporting body 22 and an electrode plate 23. In the center on the side of the electrode supporting body at the boundary between the two, a hollow 62, the dimensions of which are determined such that a resonance is generated at a frequency of supplied high-frequency electric power and an electric field orthogonal to the electrode plate 23 is generated inside, is provided. Furthermore, a shield ring which surrounds the electrode plate 23 has a shape in which the lower surface is in the same level as the electrode plate 23, and it is made of a material that is not easily eroded by the plasma. By this, processing small features becomes possible with uniform distribution of plasma and in less degradation due to change over time.
    Type: Application
    Filed: March 10, 2003
    Publication date: August 21, 2003
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Ogasawara, Kazuya Kato, Toshifumi Nagaiwa, Kosuke Imafuku, Koichi Kazama
  • Publication number: 20020029745
    Abstract: A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.
    Type: Application
    Filed: April 24, 2001
    Publication date: March 14, 2002
    Inventors: Toshifumi Nagaiwa, Shuei Sekizawa, Kosuke Imafuku, Jun Ooyabu