Patents by Inventor Toshiharu Iwase

Toshiharu Iwase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7151068
    Abstract: A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 ?m, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.
    Type: Grant
    Filed: November 29, 2002
    Date of Patent: December 19, 2006
    Assignee: Sumitomo Titanium Corporation
    Inventors: Yoshitake Natsume, Tadashi Ogasawara, Munetoshi Watanabe, Kazuomi Azuma, Toshiharu Iwase
  • Publication number: 20050085095
    Abstract: A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 ?m, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.
    Type: Application
    Filed: November 29, 2002
    Publication date: April 21, 2005
    Inventors: Yoshitake Natsume, Tadashi Ogasawara, Munetoshi Watanabe, Kazuomi Azuma, Toshiharu Iwase
  • Publication number: 20040182700
    Abstract: It is an object of the present invention to provide a silicon monoxide sinter having a uniform texture, good machinability, and splash resistance, which are all required of a silicon monoxide vapor deposition material, or a silicon monoxide sinter having a diameter of at least 100 mm and the shape required of a sputtering target material, and to obtain both of these sinters stably and with good productivity. A silicon monoxide sinter with a bulk density of at least 1.68 g/cm3 can be obtained by sintering under hot pressing conditions comprising a pressing pressure of at least 15 MPa and a temperature of 1200 to 1350° C., and by using a press die which comprises an inner die divided into a plurality of segments and integrated in an integrated outer die with a gap therebetween, and a cushioning material disposed in this gap, it is possible to obtain a silicon monoxide sinter whose diameter is at least 100 mm and whose bulk density is at least 2.
    Type: Application
    Filed: July 17, 2003
    Publication date: September 23, 2004
    Inventors: Yoshitake Natsume, Takashi Onishi, Tadashi Ogasawara, Munetoshi Watanabe, Toshiharu Iwase