Patents by Inventor Toshiharu Matsuzawa

Toshiharu Matsuzawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming pattern and projection aligner for carrying out the same
    Patent number: 4904569
    Abstract: An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is made very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
    Type: Grant
    Filed: January 15, 1988
    Date of Patent: February 27, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Fukuda, Norio Hasegawa, Toshihiko Tanaka, Toshiei Kurosaki, Saburo Nonogaki, Yoshio Taniguchi, Toshiharu Matsuzawa
  • Method of measuring resist pattern
    Patent number: 4670650
    Abstract: A method of measuring a resist pattern in which size and/or position of a latent image formed in the resist film by irradiation, is measured by Auger electron spectroscopy or a like method. With this method, since there is no need to develop when the resist pattern is not acceptable, manufacturing costs are decreased. By adjusting developing time by replying upon the data from the latent image, furthermore, high yield processing can be effected more precisely.
    Type: Grant
    Filed: May 24, 1985
    Date of Patent: June 2, 1987
    Assignee: Hitachi, Ltd
    Inventors: Toshiharu Matsuzawa, Kozo Mochiji
  • Method of forming a microscopic pattern with far UV pattern exposure, alkaline solution development, and dry etching
    Patent number: 4614706
    Abstract: A film of a photoresist having phenolic hydroxyl groups is irradiated with far-ultraviolet radiation, and is thereafter developed with an alkaline aqueous solution. Using as a mask a resist pattern thus obtained, dry etching is carried out to form a microscopic pattern. Since the photoresist is highly immune against the dry etching, the microscopic pattern can be formed at a high precision. By adding an azide of a specified structure, the photoresist has its sensitivity to the far-ultraviolet radiation enhanced more.
    Type: Grant
    Filed: May 2, 1984
    Date of Patent: September 30, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Toshiharu Matsuzawa, Takao Iwayanagi, Kikuo Douta, Hiroshi Yanazawa, Takahiro Kohashi, Saburo Nonogaki
  • Method of forming a microscopic pattern
    Patent number: 4536421
    Abstract: A negative photoresist having benzene rings is irradiated with short-wavelength ultraviolet radiation, and is developed to form a photoresist pattern whose sectional shape is an inverted trapezoid. Using the photoresist pattern, the lift-off process having heretofore required troublesome steps can be performed very easily.
    Type: Grant
    Filed: July 30, 1981
    Date of Patent: August 20, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Toshiharu Matsuzawa, Kikuo Douta, Takao Iwayanagi, Hiroshi Yanazawa