Abstract: A lateral semiconductor device includes: a semiconductor substrate formed on a base region therein; a plurality of emitter regions with a triangle arrangement in an upper part of the base layer and collector regions surrounding the emitter regions, respectively, apart from the emitter regions with a predetermined space through the base layer; the base layer formed in a concentric circular pattern on the upper part; the emitter regions and collector regions provided with contacts respectively; and emitter and collector wiring layers connected to the contacts.

Abstract: A semiconductor device comprising: a semiconductor substrate; a base layer 34 formed on an upper part of the semiconductor substrate; a plurality of emitter regions arranged in a plurality of rows, each row thereof being provided on an upper part in the base layer at an equal interval in a first direction of a surface of the substrate, being arranged with a predetermined pitch for odd number rows in a second direction substantially perpendicular to the first direction, and being arranged with the predetermined pitch for even number rows in the second direction at a position shifted by ½ of the predetermined pitch to the arrangement of the odd number rows; a collector region provided on the upper part of the base layer to surround each of the emitter regions with a predetermined space; an insulating layer provided on the base layer, the emitter layer, and the collector layer; an emitter contact formed on the emitter region through an opening of the insulating layer in a predetermined shape; a collector cont