Abstract: An element carrier has a mounting surface where at least one element outputting a high-frequency signal is disposed. A first dielectric layer has a first side surface partially forming the mounting surface and a first main surface connecting to the first side surface and extending in an intersecting direction intersecting with the mounting surface. A first wiring pattern is provided on the first main surface and extends from the first side surface. A second dielectric layer has a second side surface partially forming the mounting surface and a second main surface connecting to the second side surface and extending in the intersecting direction, and is provided on a part of the first main surface of the first dielectric layer where the first wiring pattern is provided. A second wiring pattern is provided on the second main surface of the second dielectric layer and extends from the second side surface.

Abstract: A photoelectric converting semiconductor device includes a photoelectric converting semiconductor element, a coplanar board and a terminal resistance. A distance W between a signal line and a ground line positioned in an area where photoelectric converting semiconductor element is mounted is made wider than the distance in an area where photoelectric converting semiconductor element is not mounted, and width of signal line positioned in the area where photoelectric converting semiconductor element is mounted is made narrower than in the area where photoelectric converting semiconductor element is not mounted. Thus, when the photoelectric converting semiconductor element is mounted on the coplanar board, variation of characteristic impedance is suppressed.

Abstract: A photoelectric converting semiconductor device includes a photoelectric converting semiconductor element, a coplanar board and a terminal resistance. A distance W between a signal line and a ground line positioned in an area where photoelectric converting semiconductor element is mounted is made wider than the distance in an area where photoelectric converting semiconductor element is not mounted, and width of signal line positioned in the area where photoelectric converting semiconductor element is mounted is made narrower than in the area where photoelectric converting semiconductor element is not mounted. Thus, when the photoelectric converting semiconductor element is mounted on the coplanar board, variation of characteristic impedance is suppressed.