Abstract: According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.

Abstract: According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.

Abstract: A semiconductor modules includes insulating substrates having first and second patterns thereon. One terminal plate connects the first patterns and another terminal plate connects the second patterns. A first and a second switching chip are provided on the first pattern. Bonding wires connect the first ans second chips to the second pattern. An insulating plate with an auxillary conductor theron is disposed on the first pattern between the second pattern and both the first and second chips. A first auxiliary connection connect the auxiliary conductor and the second chip and a second auxilliary connection connect thes auxiliary conductor and the second pattern. The auxiliary connections may be, for example, bonding wires or solder connections.

Abstract: A semiconductor device includes a base plate, a semiconductor chip, and a first to a fourth terminal plates. The first terminal plate includes a first main body unit. The second terminal plate includes a second main body unit. The second main body unit opposes the first main body unit. The third terminal plate includes a third main body unit. The third main body unit opposes the first main body unit and the second main body unit. The fourth terminal plate includes a fourth main body unit. The fourth main body unit opposes the third main body unit. A thickness of the third main body unit is thinner than a thickness of the first main body unit. A thickness of the fourth main body unit is thinner than a thickness of the second main body unit.

Abstract: According to an embodiment, a wiring board includes an insulating board including a heat transfer region made of silicon nitride and having a thickness in a range between 0.2 mm and 1 mm; and a wiring layer including a pad stacked on the heat transfer region and made of a metal material having a thickness of 1.5 mm or more.

Abstract: A semiconductor device includes a base plate, a semiconductor chip, and a first to a fourth terminal plates. The first terminal plate includes a first main body unit. The second terminal plate includes a second main body unit. The second main body unit opposes the first main body unit. The third terminal plate includes a third main body unit. The third main body unit opposes the first main body unit and the second main body unit. The fourth terminal plate includes a fourth main body unit. The fourth main body unit opposes the third main body unit. A thickness of the third main body unit is thinner than a thickness of the first main body unit. A thickness of the fourth main body unit is thinner than a thickness of the second main body unit.