Abstract: A remote access control system includes a remote access control apparatus and a communication relay apparatus. The remote access control apparatus is configured to establish a predetermined communication session with the communication relay apparatus through predetermined connection target information obtaining processing performed by active connection to the remote access control apparatus from the communication relay apparatus, to transmit a secure communication connection start command to the communication relay apparatus, to receive a secure communication connection request from the communication relay apparatus to perform processing for establishing a first secure communication session, and to receive a secure communication connection request from the user apparatus based on the result of the establishment of the first secure communication session to perform processing for establishing a second secure communication session.

Abstract: A remote access control system includes a remote access control apparatus and a communication relay apparatus. The remote access control apparatus is configured to establish a predetermined communication session with the communication relay apparatus through predetermined connection target information obtaining processing performed by active connection to the remote access control apparatus from the communication relay apparatus, to transmit a secure communication connection start command to the communication relay apparatus, to receive a secure communication connection request from the communication relay apparatus to perform processing for establishing a first secure communication session, and to receive a secure communication connection request from the user apparatus based on the result of the establishment of the first secure communication session to perform processing for establishing a second secure communication session.

Abstract: The invention is to obtain a resistor element having high resistance, a low temperature coefficient, and high uniformity of sheet resistance in a wafer. A field oxide film is formed on a semiconductor substrate. On the field oxide film a non-doped silicon film is formed by a LPCVD method. The silicon film is made of an amorphous silicon film or a polysilicon film. BF2+ is ion implanted in this silicon film. Then, either before or after this ion implantation, N2 annealing is performed at low temperature between 650 and 750° C.

Abstract: To provide a method for fabricating a nonvolatile semiconductor memory device in which the occurrence of a trap site formed in a tunnel oxide film can be suppressed so that W/E cycle of a memory cell transistor can be improved. A tunnel oxide film formed between a floating gate 13 and a control gate is constituted by at least one CVD oxide film formed through chemical vapor-phase growth by a low pressure CVD method, and there is provided a step of heating the CVD oxide film in a nitriding atmosphere containing N2O, NO or NH3.

Abstract: It is an object to increase the number of rewriting timing permitted for a split-gate-type nonvolatile semiconductor memory device. Ends S of floating gate 4 are disposed in inclined portions of LOCOS oxide films 2A and 2B so as to sharpen projections of the floating gate to have an angle B.