Abstract: The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal.

Abstract: The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal.

Abstract: In a Czochralski method for producing a silicon single crystal by growing the crystal, the pulling rate of the single crystal is gradually increased during formation of a tail part after formation of a predetermined or constant diameter part of the single crystal. The length t of the tail part is defined to be a or more, where a represents a distance from the tip end of the tail part to a position of an extraordinary oxygen precipitation area when the tail part is formed after the predetermined or constant diameter part is grown. Productivity and yield of the silicon single crystal are improved by preventing rapid change in temperature while the single crystal is separated from the melt in the tailing process, to suppress generation of an area where the amount of precipitated oxygen is extraordinarily large and an OSF ring due to rapid increase in temperature when the tail part is formed, in the predetermined or constant diameter part near the tail part.

Abstract: A method of producing a single crystal by Czochralski method by contacting a seed crystal with a melt in a crucible, and then pulling it slowly to grow a single crystal ingot, wherein a pulling condition is controlled according to a cumulative time of use of a heater surrounding the crucible. The pulling conditions to be controlled may induce the relative position of the heater and the crucible, the number of rotations of the crucible, the number of rotations of the crystal, or an atmosphere pressure in the furnace and a gas volume of flowing. Also described is a method of producing a silicon single crystal by CZ method wherein a dispersion of impurity concentration in the crystal can be reduced, and a single crystal can be produced stably.

Abstract: A heater mechanism for a crystal pulling apparatus is disclosed. Electrodes made of copper or the like and disposed under a heater are connected to the heater via graphite members. A cover member is attached to each graphite member, so that the downwardly extending portion of the cover member surrounds the outer surface of the graphite member. Accordingly, a leak or splash of a melt is prevented from contacting the electrodes. The length of each graphite member is equal to or greater than the distance between the bottom surface of the heater and the top surface of a melt spill tray which distance is measured when the heater mechanism is raised The cover member is vertically slidable along the outer surface of each graphite member. Thus, even when a material melt leaks out from a crucible, the electrodes of the heater mechanism can be protected from a fusion damage or the like which would be otherwise caused by the leak of the melt.

Abstract: A method and a mechanism for lifting a gas flow-guide cylinder of a crystal pulling apparatus are disclosed. The crystal pulling apparatus includes a crucible for accommodating a crystalline material and for melting the crystalline material through heating, and a gas flow-guide cylinder capable of being moved upward/downward above the crucible. The crystal pulling apparatus is operated to grow a single crystal from the crystalline material by a pulling method. When a solid crystalline material is to be placed in the crucible, the gas flow-guide cylinder is moved upward to thereby separate the bottom end of the gas flow-guide cylinder away from the top portion of the crucible. This prevents the crystalline material from coming into contact with the gas flow-guide cylinder.

Abstract: A device for pulling a silicon single crystal is constructed so as to preclude deposition of a SiO-derived substance on graphite parts inside the device and prevent the graphite parts from deterioration, elongate the duration of continuous use of the device in a great measure, and simplify the disassembly and reassembly of the device.This device pulls a silicon single crystal in an atmosphere of inert gas by the Czochralski method, which device is chracterized by comprising a crucible 1 for accommodating a molten silicon mass 2, a heater 3 disposed round the periphery of the crucible 1, an outer member 14 forming a pulling chamber 6 for accomodating the crucible 1, an inert gas inlet part 15 disposed in the upper part of the pulling chamber 6, and an inert gas outlet part 16 separated from the inert gas inlet part 15 in the same upper part of the pulling chamber 6.

Abstract: A recharging device suitable for use in a Czochralski-type monocrystal ingot pulling apparatus, includes a shaft (3) which is suspended from a pulling element (1), a ring slider (8) capable of sliding along the shaft, a stopper (20) for stopping the downward movement of the ring slider, a pair of hooks (9, 11, 13) pivotably connected to the shaft below the ring slider and capable of assuming hooking and unhooking positions, and a pair of rods (16) each having one end connected to the hooks such that when the ring slider slides upward relative to the shaft the pair of the rods cause the hooks to assume their unhooking position, and when the ring slider slides downward relative to the shaft the rods cause the hooks to assume their hooking position.